scholarly journals A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nanoscales, and Quantum Devices

Sensors ◽  
2020 ◽  
Vol 20 (15) ◽  
pp. 4163
Author(s):  
Avi Karsenty
Keyword(s):  
Hall Effect ◽  
High Speed ◽  
Review Paper ◽  
Process Development ◽  
Analytical Models ◽  
Nanoscale Devices ◽  
Comprehensive Review ◽  
Complex Design ◽  
Hall Effects

A comprehensive review of the main existing devices, based on the classic and new related Hall Effects is hereby presented. The review is divided into sub-categories presenting existing macro-, micro-, nanoscales, and quantum-based components and circuitry applications. Since Hall Effect-based devices use current and magnetic field as an input and voltage as output. researchers and engineers looked for decades to take advantage and integrate these devices into tiny circuitry, aiming to enable new functions such as high-speed switches, in particular at the nanoscale technology. This review paper presents not only an historical overview of past endeavors, but also the remaining challenges to overcome. As part of these trials, one can mention complex design, fabrication, and characterization of smart nanoscale devices such as sensors and amplifiers, towards the next generations of circuitry and modules in nanotechnology. When compared to previous domain-limited text books, specialized technical manuals and focused scientific reviews, all published several decades ago, this up-to-date review paper presents important advantages and novelties: Large coverage of all domains and applications, clear orientation to the nanoscale dimensions, extended bibliography of almost one hundred fifty recent references, review of selected analytical models, summary tables and phenomena schematics. Moreover, the review includes a lateral examination of the integrated Hall Effect per sub-classification of subjects. Among others, the following sub-reviews are presented: Main existing macro/micro/nanoscale devices, materials and elements used for the fabrication, analytical models, numerical complementary models and tools used for simulations, and technological challenges to overcome in order to implement the effect in nanotechnology. Such an up-to-date review may serve the scientific community as a basis for novel research oriented to new nanoscale devices, modules, and Process Development Kit (PDK) markets.

Defects Characterization of Arsenic Implanted Silicon by Ac Hall Effect Measurements

1986 ◽  
Vol 71 ◽  
Author(s):  
H. Jaouen ◽  
G. Ghibaudo ◽  
C. Christofides
Keyword(s):  
Hall Effect ◽  
Long Range ◽  
Silicon Films ◽  
Experimental Results ◽  
Isochronal Annealing ◽  
Transport Models ◽  
Hall Effects ◽  
Hall Effect Measurements

AbstractAC and DC Hall effects measurements as a function of temperature (77-300K) and frequency ( 1Hz-100KHz) have been performed to characterize Implanted Silicon films. This technique enables the determination of the annihilation processes of defects In such layers as a function of temperature of isochronal anneallngs (300°C to 1100°C during 1 hour). The experimental results are discussed with respect to proper transport models based on short and long range disorder considerations in order to find out the features of defects and Inhomogeneities arising from implantation and their thermal annihilation after isochronal annealing.

A Review of In Situ Mechanical Characterization of Polymer Nanocomposites: Prospect and Challenges

2017 ◽  
Vol 69 (5) ◽  
Author(s):  
Samit Roy ◽  
John Ryan ◽  
Samantha Webster ◽  
Dhriti Nepal
Keyword(s):  
Polymer Nanocomposites ◽  
Review Paper ◽  
Mechanical Characterization ◽  
Nanocomposite Materials ◽  
Atomistic Simulations ◽  
In Situ Testing ◽  
Comprehensive Review ◽  
Material Systems

Mechanics at the nanoscale is radically different from mechanics at the macroscale. Atomistic simulations have revealed this important fact, and experiments are being performed to support it. Specifically, in situ testing is being performed by researchers using different approaches with different material systems to interrogate the material at the nanoscale and prove or disprove many of the proposed models. This paper attempts to provide a fairly comprehensive review of the in situ testing that is being performed at the nanoscale, together with a brief description of the models that in situ testing are being used to verify. This review paper intends to primarily provide a broad snapshot of in situ testing of different nanocarbon-based polymeric nanocomposite materials.

Characterization of Unfilled Tungsten Plugs on a 0.35μm CMOS Multilevel Metallization Process

1996 ◽  
Author(s):  
H. Sur ◽  
S. Bothra ◽  
Y. Strunk ◽  
J. Hahn
Keyword(s):  
Process Development ◽  
Process Integration ◽  
Wafer Level ◽  
Electrical Failure ◽  
Analysis Techniques ◽  
Integration Approach ◽  
Intermetal Dielectric ◽  
Metallization Process ◽  
Section Analysis

Abstract An investigation into metallization/interconnect failures during the process development phase of an advanced 0.35μm CMOS ASIC process is presented. The corresponding electrical failure signature was electrical shorting on SRAM test arrays and subsequently functional/Iddq failures on product-like test vehicles. Advanced wafer-level failure analysis techniques and equipment were used to isolate and identify the leakage source as shorting of metal lines due to tungsten (W) residue which was originating from unfilled vias. Further cross-section analysis revealed that the failing vias were all exposed to the intermetal dielectric spin-on glass (SOG) material used for filling the narrow spaces between metal lines. The outgassing of the SOG in the exposed regions of the via prior to and during the tungsten plug deposition is believed to be the cause of the unfilled vias. This analysis facilitated further process development in eliminating the failure mechanism and since then no failures of this nature have been observed. The process integration approach used to eliminate the failure is discussed.

Fabrication and characterization of novel high-speed InGaAs/InP uni-traveling-carrier photodetector for high responsivity

2015 ◽  
Vol 24 (10) ◽  
pp. 108506
Author(s):  
Qing-Tao Chen ◽  
Yong-Qing Huang ◽  
Jia-Rui Fei ◽  
Xiao-Feng Duan ◽  
Kai Liu ◽  
...  
Keyword(s):  
High Speed ◽  
High Responsivity ◽  
Fabrication And Characterization

scholarly journals Anomalous spin Hall and inverse spin Hall effects in magnetic systems

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
X. R. Wang
Keyword(s):  
Hall Effect ◽  
Order Parameter ◽  
Spin Current ◽  
Spin Hall Effect ◽  
Magnetic Systems ◽  
Charge Current ◽  
Spin Currents ◽  
Tensor Quantity ◽  
Hall Effects ◽  
Spin Hall Effects

AbstractSpin current is a very important tensor quantity in spintronics. However, the well-known spin-Hall effect (SHE) can only generate a few of its components whose propagating and polarization directions are perpendicular with each other and to an applied charge current. It is highly desirable in applications to generate spin currents whose polarization can be in any possible direction. Here anomalous SHE and inverse spin-Hall effect (ISHE) in magnetic systems are predicted. Spin currents, whose polarisation and propagation are collinear or orthogonal with each other and along or perpendicular to the charge current, can be generated, depending on whether the applied charge current is along or perpendicular to the order parameter. In anomalous ISHEs, charge currents proportional to the order parameter can be along or perpendicular to the propagating or polarization directions of the spin current.

Sign reversal of anomalous Hall effect derived from the transformation of scattering effect in cluster-assembled Ni0.8Fe0.2 nanostructural films

Nanoscale ◽  
2021 ◽  
Author(s):  
Ning Jiang ◽  
Bo Yang ◽  
Yulong Bai ◽  
Yaoxiang Jiang ◽  
Shifeng Zhao
Keyword(s):  
Hall Effect ◽  
Anomalous Hall Effect ◽  
Sign Reversal ◽  
Surface And Interface ◽  
Scattering Effect ◽  
Single Substance ◽  
Interface Scattering ◽  
Hall Effects

Both surface and interface scattering induced a sign reversal of anomalous Hall effects (AHE) in a few heterostructures. The sign reversal exiting in a single-substance can clarify the role of...

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