Defects Characterization of Arsenic Implanted Silicon by Ac Hall Effect Measurements

1986 ◽  
Vol 71 ◽  
Author(s):  
H. Jaouen ◽  
G. Ghibaudo ◽  
C. Christofides
Keyword(s):  
Hall Effect ◽  
Long Range ◽  
Silicon Films ◽  
Experimental Results ◽  
Isochronal Annealing ◽  
Transport Models ◽  
Hall Effects ◽  
Hall Effect Measurements

AbstractAC and DC Hall effects measurements as a function of temperature (77-300K) and frequency ( 1Hz-100KHz) have been performed to characterize Implanted Silicon films. This technique enables the determination of the annihilation processes of defects In such layers as a function of temperature of isochronal anneallngs (300°C to 1100°C during 1 hour). The experimental results are discussed with respect to proper transport models based on short and long range disorder considerations in order to find out the features of defects and Inhomogeneities arising from implantation and their thermal annihilation after isochronal annealing.

Optical Characterization of 100 eV C+ Ion Doped GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Ion Beam ◽  
Optical Characterization ◽  
Mbe Growth ◽  
Impurity Doping ◽  
Specific Emissions ◽  
Hall Effect Measurements

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

scholarly journals A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nanoscales, and Quantum Devices

Sensors ◽  
2020 ◽  
Vol 20 (15) ◽  
pp. 4163
Author(s):  
Avi Karsenty
Keyword(s):  
Hall Effect ◽  
High Speed ◽  
Review Paper ◽  
Process Development ◽  
Analytical Models ◽  
Nanoscale Devices ◽  
Comprehensive Review ◽  
Complex Design ◽  
Hall Effects

A comprehensive review of the main existing devices, based on the classic and new related Hall Effects is hereby presented. The review is divided into sub-categories presenting existing macro-, micro-, nanoscales, and quantum-based components and circuitry applications. Since Hall Effect-based devices use current and magnetic field as an input and voltage as output. researchers and engineers looked for decades to take advantage and integrate these devices into tiny circuitry, aiming to enable new functions such as high-speed switches, in particular at the nanoscale technology. This review paper presents not only an historical overview of past endeavors, but also the remaining challenges to overcome. As part of these trials, one can mention complex design, fabrication, and characterization of smart nanoscale devices such as sensors and amplifiers, towards the next generations of circuitry and modules in nanotechnology. When compared to previous domain-limited text books, specialized technical manuals and focused scientific reviews, all published several decades ago, this up-to-date review paper presents important advantages and novelties: Large coverage of all domains and applications, clear orientation to the nanoscale dimensions, extended bibliography of almost one hundred fifty recent references, review of selected analytical models, summary tables and phenomena schematics. Moreover, the review includes a lateral examination of the integrated Hall Effect per sub-classification of subjects. Among others, the following sub-reviews are presented: Main existing macro/micro/nanoscale devices, materials and elements used for the fabrication, analytical models, numerical complementary models and tools used for simulations, and technological challenges to overcome in order to implement the effect in nanotechnology. Such an up-to-date review may serve the scientific community as a basis for novel research oriented to new nanoscale devices, modules, and Process Development Kit (PDK) markets.

scholarly journals Substrate Proteins Take Shape at an Improved Bacterial Translocon

2018 ◽  
Vol 201 (1) ◽  
Author(s):  
Donald Oliver
Keyword(s):  
Protein Transport ◽  
Protein Translocation ◽  
Membrane Vesicles ◽  
Transport Models ◽  
Content Type ◽  
Rate Limiting ◽  
Substrate Proteins

ABSTRACTCharacterization of Sec-dependent bacterial protein transport has often relied on anin vitroprotein translocation system comprised in part ofEscherichia coliinverted inner membrane vesicles or, more recently, purified SecYEG translocons reconstituted into liposomes using mostly a single substrate (proOmpA). A paper published in this issue (P. Bariya and L. Randall, J Bacteriol 201:e00493-18, 2019, https://doi.org/10.1128/JB.00493-18) finds that inclusion of SecA protein during SecYEG proteoliposome reconstitution dramatically improves the number of active translocons. This experimentally useful and intriguing result that may arise from SecA membrane integration properties is discussed here. Furthermore, determination of the rate-limiting transport step for nine different substrates implicates the mature region distal to the signal peptide in the observed rate constant differences, indicating that more nuanced transport models that respond to differences in protein sequence and structure are needed.

The characterization of pure and niobium-doped crystals of strontium titanate using Hall, electrical conductivity, and optical absorption data

1978 ◽  
Vol 56 (4) ◽  
pp. 453-467 ◽  
Author(s):  
G. Perluzzo ◽  
J. Destry
Keyword(s):  
Heat Treatment ◽  
Electrical Conductivity ◽  
Optical Absorption ◽  
Hall Effect ◽  
Strontium Titanate ◽  
Defect States ◽  
Absorption Data ◽  
Niobium Doped ◽  
Hall Effect Measurements

A description is given of the heat treatment, under controlled conditions, of crystals of strontium titanate, both pure and niobium-doped, and of the effect of this treatment on the defect states in this material. Our analysis is based on evaluation of the results of electrical conductivity and Hall effect measurements, and those of optical absorption.

Characterization of Surface Defect Structure by Low Energy Electron Diffraction

1984 ◽  
Vol 41 ◽  
Author(s):  
J. F. Wendelken ◽  
G. -C. Wang ◽  
J. M. Pimbley ◽  
T. -M. Lu
Keyword(s):  
Electron Beam ◽  
Electron Diffraction ◽  
Surface Defect ◽  
Low Energy ◽  
Experimental Results ◽  
Energy Electron ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

AbstractLow energy electron diffraction is a surface sensitive tool which is most widely used for the determination of surface symmetries and equilibrium atomic positions. Experimental and theoretical advances made in the past five years make it possible now to use LEED also for the characterization of a wide variety of surface defect structures. In this paper a variety of experimental results involving analysis of diffracted electron beam shapes as a function of primary electron beam energy, adsorbate coverage, crystal tem-perature and ordering time are presented. These experimental results coupled with kinematic theory, allow the determination of step density, size and shape of reconstruction domains and overlayer islands, island size distribution in an overlayer during growth, and the mode of growth.

scholarly journals Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements

2017 ◽  
Vol 10 (4) ◽  
pp. 046601 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
Yuji Kiuchi ◽  
Mitsuru Sometani ◽  
Shinsuke Harada ◽  
Dai Okamoto ◽  
...  
Keyword(s):  
Hall Effect ◽  
Conduction Band ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Hall Effect Measurements

Determination of Donor Densities and Donor Levels in 3C-SiC Grown from Si2(CH3)6Using Hall-Effect Measurements

2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5069-5075 ◽  
Author(s):  
Hideharu Matsuura ◽  
Yasuichi Masuda ◽  
Yi Chen ◽  
Shigehiro Nishino
Keyword(s):  
Hall Effect ◽  
Hall Effect Measurements

Characterization of unintentionally or lightly doped polysilicon films by improved Hall effect measurements

1997 ◽  
Vol 301 (1-2) ◽  
pp. 230-235 ◽  
Author(s):  
F. Le Bihan ◽  
B. Fortin ◽  
S. Cauneau ◽  
D. Briand ◽  
O. Bonnaud
Keyword(s):  
Hall Effect ◽  
Polysilicon Films ◽  
Hall Effect Measurements

Structural and Electronic Properties of Laser Crystallized Silicon Films

1998 ◽  
Vol 536 ◽  
Author(s):  
T. Sameshima
Keyword(s):  
Energy Density ◽  
Hall Effect ◽  
Carrier Mobility ◽  
Laser Energy ◽  
Threshold Energy ◽  
Free Carrier ◽  
Silicon Films ◽  
Laser Energy Density ◽  
Threshold Energy Density ◽  
Hall Effect Measurements

AbstractFundamental properties of silicon films crystallized by a 30-ns-pulsed XeCI excimer laser were discussed. Although crystallization of 50-nm thick silicon films formed on quartz substrates occurred through laser hearing at the crystalline threshold energy density of 160 mJ/cm2, a higher laser energy density at 360 mJ/cm2 was necessary to crystallize silicon films completely. Analyses of free carrier optical absorption revealed that phosphorus-doped silicon films with a carrier density about 2×1020 cm−3 had a high carrier mobility of 20 cm2/Vs for irradiation at the crystallization threshold energy density, while Hall effect measurements gave a carrier mobility of electrical current traversing grain boundaries of 3 cm2/Vs. This suggested that the crystalline grains had good electrical properties. As the laser energy density increased to 360 mJ/cm2 and laser pulse number increased to 5, the carrier mobility obtained by the Hall effect measurements markedly increased to 28 cm2/Vs because of improvement of grain boundary properties, while the carrier mobility obtained by analysis of free carrier absorption increased to 40 cm2/Vs. A post annealing method at 190°C with high-pressure H2O vapor was developed to reduce the density of defect states. Increase of carrier mobility to 500 cm2/Vs was demonstrated in the polycrystalline silicon thin film transistors fabricated in laser crystallized silicon films.

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