scholarly journals Characterization, Modeling and Design Parameters Identification of Silicon Carbide Junction Field Effect Transistor for Temperature Sensor Applications

Sensors ◽  
2010 ◽  
Vol 10 (1) ◽  
pp. 388-399 ◽  
Author(s):  
Tarek Salah ◽  
Sofiane Khachroumi ◽  
Hervé Morel
Keyword(s):  
Silicon Carbide ◽  
Temperature Sensor ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Parameters Identification ◽  
Design Parameters ◽  
Sensor Applications ◽  
Effect Transistor

Improved Performance of Stair-Stepping Buffer-Gate 4H Silicon Carbide Metal Semiconductor Field Effect Transistor

2020 ◽  
Vol 209 (1) ◽  
pp. 11-18
Author(s):  
Xianjun Zhang ◽  
Na Li ◽  
Mingjia Wang ◽  
Qingliang Qin ◽  
Haohua Qin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Improved Performance

scholarly journals CMOS Readout Circuit Developments for Ion Sensitive Field Effect Transistor Based Sensor Applications

10.5772/6891 ◽  
2010 ◽  
Author(s):  
Wen-Yaw Chung ◽  
Febus Reidj G. Cruz ◽  
Chung-Huang Yang ◽  
Fu-Shun He ◽  
Tai-Tsun Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Readout Circuit ◽  
Sensor Applications ◽  
Effect Transistor

Prolonged 500°C Operation of 100+ Transistor Silicon Carbide Integrated Circuits

2018 ◽  
Vol 924 ◽  
pp. 949-952 ◽  
Author(s):  
David J. Spry ◽  
Philip G. Neudeck ◽  
Dorothy Lukco ◽  
Liang Yu Chen ◽  
Michael J. Krasowski ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuits ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Earth Atmosphere ◽  
Surface Atmosphere ◽  
Effect Transistor ◽  
Output Characteristics ◽  
Technology Demonstrator

This report describes more than 5000 hours of successful 500 °C operation of semiconductor integrated circuits (ICs) with more than 100 transistors. Multiple packaged chips with two different 4H-SiC junction field effect transistor (JFET) technology demonstrator circuits have surpassed thousands of hours of oven-testing at 500 °C. After 100 hours of 500 °C burn-in, the circuits (except for 2 failures) exhibit less than 10% change in output characteristics for the remainder of 500 °C testing. We also describe the observation of important differences in IC materials durability when subjected to the first nine constituents of Venus-surface atmosphere at 9.4 MPa and 460 °C in comparison to what is observed for Earth-atmosphere oven testing at 500 °C.

Electrical modelling and design insight of a vertically movable gate field effect transistor for physical sensor applications

2012 ◽  
Vol 7 (11) ◽  
pp. 1117-1120 ◽  
Author(s):  
Justin M. Williams ◽  
Heung Seok Kang ◽  
In-Hyouk Song ◽  
Bryan S. Cole ◽  
Byoung Hee You
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Sensor Applications ◽  
Physical Sensor ◽  
Electrical Modelling ◽  
Effect Transistor

Avalanche Ruggedness Assessment of 1.2kV 45mΩ Asymmetric Trench SiC MOSFETs

2020 ◽  
Vol 1004 ◽  
pp. 837-842
Author(s):  
Xiao Chuan Deng ◽  
Hao Zhu ◽  
Xuan Li ◽  
Xiao Jie Xu ◽  
Kun Zhou ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Pulse ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Safe Operation ◽  
Effect Transistor ◽  
The Impact

In this paper, avalanche ruggedness of the commercial 1.2kV 45mΩ asymmetric silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) is investigated by single-pulse unclamped inductive switching (UIS) test. The avalanche safe operation area (SOA) of the MOSFET is established. The impact of inductance and temperature on avalanche capability is exhibited, which is valuable for many application circuits. The variation in critical avalanche energy with peak avalanche current, peak avalanche current with avalanche time, and temperatures dependence of critical avalanche energy are confirmed.

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