Numerical and experimental characterization of 4H-silicon carbide lateral metal-oxide-semiconductor field-effect transistor

2006 ◽  
Vol 100 (4) ◽  
pp. 044515 ◽  
Author(s):  
Siddharth Potbhare ◽  
Neil Goldsman ◽  
Gary Pennington ◽  
Aivars Lelis ◽  
James M. McGarrity
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Experimental Characterization ◽  
Effect Transistor

scholarly journals Experimental characterization of a metal-oxide-semiconductor field-effect transistor-based Coulter counter

2008 ◽  
Vol 103 (10) ◽  
pp. 104701 ◽  
Author(s):  
Manoj Sridhar ◽  
Dongyan Xu ◽  
Yuejun Kang ◽  
Anthony B. Hmelo ◽  
Leonard C. Feldman ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Coulter Counter ◽  
Oxide Semiconductor ◽  
Experimental Characterization ◽  
Effect Transistor

Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor

2008 ◽  
Vol 47 (4) ◽  
pp. 2538-2543 ◽  
Author(s):  
Daisuke Kosemura ◽  
Yasuto Kakemura ◽  
Tetsuya Yoshida ◽  
Atsushi Ogura ◽  
Masayuki Kohno ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor

Avalanche Ruggedness Assessment of 1.2kV 45mΩ Asymmetric Trench SiC MOSFETs

2020 ◽  
Vol 1004 ◽  
pp. 837-842
Author(s):  
Xiao Chuan Deng ◽  
Hao Zhu ◽  
Xuan Li ◽  
Xiao Jie Xu ◽  
Kun Zhou ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Single Pulse ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Safe Operation ◽  
Effect Transistor ◽  
The Impact

In this paper, avalanche ruggedness of the commercial 1.2kV 45mΩ asymmetric silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) is investigated by single-pulse unclamped inductive switching (UIS) test. The avalanche safe operation area (SOA) of the MOSFET is established. The impact of inductance and temperature on avalanche capability is exhibited, which is valuable for many application circuits. The variation in critical avalanche energy with peak avalanche current, peak avalanche current with avalanche time, and temperatures dependence of critical avalanche energy are confirmed.

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