scholarly journals Design of Promising Heptacoordinated Organotin (IV) Complexes-PEDOT: PSS-Based Composite for New-Generation Optoelectronic Devices Applications

Polymers ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 1023
Author(s):  
María Elena Sánchez-Vergara ◽  
Leon Hamui ◽  
Elizabeth Gómez ◽  
Guillermo M. Chans ◽  
José Miguel Galván-Hidalgo
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Optoelectronic Devices ◽  
Density Variation ◽  
Structural Modifications ◽  
Mixed Ligands ◽  
Vis Spectroscopy ◽  
Group A ◽  
Poly Styrene Sulfonate ◽  
New Generation

The synthesis of four mononuclear heptacoordinated organotin (IV) complexes of mixed ligands derived from tridentated Schiff bases and pyrazinecarboxylic acid is reported. This organotin (IV) complexes were prepared by using a multicomponent reaction, the reaction proceeds in moderate to good yields (64% to 82%). The complexes were characterized by UV-vis spectroscopy, IR spectroscopy, mass spectrometry, 1H, 13C, and 119Sn nuclear magnetic resonance (NMR) and elemental analysis. The spectroscopic analysis revealed that the tin atom is seven-coordinate in solution and that the carboxyl group acts as monodentate ligand. To determine the effect of the substituent on the optoelectronic properties of the organotin (IV) complexes, thin films were deposited, and the optical bandgap was obtained. A bandgap between 1.88 and 1.98 eV for the pellets and between 1.23 and 1.40 eV for the thin films was obtained. Later, different types of optoelectronic devices with architecture “contacts up/base down” were manufactured and analyzed to compare their electrical behavior. The design was intended to generate a composite based on the synthetized heptacoordinated organotin (IV) complexes embedded on the poly(3,4-ethylenedyoxithiophene)-poly(styrene sulfonate) (PEDOT:PSS). A Schottky curve at low voltages (<1.5 mV) and a current density variation of as much as ~3 × 10−5 A/cm2 at ~1.1 mV was observed. A generated photocurrent was of approximately 10−7 A and a photoconductivity between 4 × 10−9 and 7 × 10−9 S/cm for all the manufactured structures. The structural modifications on organotin (IV) complexes were focused on the electronic nature of the substituents and their ability to contribute to the electronic delocalization via the π system. The presence of the methyl group, a modest electron donor, or the non-substitution on the aromatic ring, has a reduced effect on the electronic properties of the molecule. However, a strong effect in the electronic properties of the material can be inferred from the presence of electron-withdrawing substituents like chlorine, able to reduce the gap energies.

Tailoring the ultrafast and nonlinear photonics of MXenes through elemental replacement

Nanoscale ◽  
2021 ◽  
Author(s):  
Hualong Chen ◽  
Lingfeng Gao ◽  
Omar A Al-Hartomy ◽  
Feng Zhang ◽  
Ahmed A. Al Ghamdi ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Optoelectronic Devices ◽  
Surface Termination ◽  
Chemical Surface ◽  
Elemental Compositions ◽  
New Generation ◽  
Unique Chemical ◽  
Nonlinear Photonics

Due to the outstanding electronic properties, unique chemical surface termination units and richness elemental compositions, MXenes have become promising candidates for developing new generation optoelectronic devices. However, there was still...

Theoretical characterization of the electronic properties of heterogeneous vertical stacks of 2D metal dichalcogenides containing one doped layer

2020 ◽  
Vol 22 (25) ◽  
pp. 14088-14098
Author(s):  
Amine Slassi ◽  
David Cornil ◽  
Jérôme Cornil
Keyword(s):  
Transition Metal ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Theoretical Characterization ◽  
New Generation

The rise of van der Waals hetero-structures based on transition metal dichalcogenides (TMDs) opens the door to a new generation of optoelectronic devices.

The Effects of Annealing on Doped P3HT Thin Films for Potential Electronic Applications

MRS Advances ◽  
2019 ◽  
Vol 4 (31-32) ◽  
pp. 1787-1792
Author(s):  
Faniya C. Doswell ◽  
Harold O. Lee ◽  
Jonathan J. Montes ◽  
Sam-Shajing Sun
Keyword(s):  
Thin Films ◽  
Conjugated Polymers ◽  
Electronic Properties ◽  
Polymer Matrix ◽  
Lower Energy ◽  
Energy State ◽  
Optoelectronic Devices ◽  
Device Performance ◽  
Conjugated Materials ◽  
Improve Device

ABSTRACTPolymeric conjugated materials are convenient for developing future soft-material-based semiconductors, conductors, electronic and optoelectronic devices due to their inherent features. Similar to their inorganic counterparts, the addition of certain minority molecules, or dopants, to polymeric conjugated materials can significantly alter the electronic and optoelectronic properties of the host conjugated polymers or composites. This allows for tunability of a variety of electronic and optoelectronic applications. One way to improve device performance is through the process of thermal annealing. Annealing allows for a polymer matrix to self-assemble into a lower energy state, which leads to an increase in crystallinity and higher charge mobility. Previous research does not explicitly define how dopants can affect this process. This study involves an evaluation of the effects of annealing with doped P3HT films to demonstrate changes in optoelectronic and electronic properties.

Spectroscopic and Electronic Properties of Layer-by-Layer Assembled Gamma-Irradiated Silver/Poly(Acrylic Acid) Nanocomposites

2015 ◽  
Vol 1098 ◽  
pp. 19-24 ◽  
Author(s):  
Ken Aldren S. Usman ◽  
Lawrence John Paulo L. Trinidad ◽  
Leon M. Payawan
Keyword(s):  
Thin Films ◽  
Acrylic Acid ◽  
Electronic Properties ◽  
Indium Tin Oxide ◽  
Layer By Layer ◽  
Simple Method ◽  
Silica Surfaces ◽  
Vis Spectroscopy ◽  
Gamma Irradiated ◽  
Poly Acrylic Acid

Layer-by-layer (L-b-L) assembly is a simple method that is useful in immobilizing nanomaterials into thin films. However, the retention of the optical and photogalvanic property of the nanoparticles and the functionalization of these materials are the common issues raised regarding this technique. In this study, L-b-L thin films were prepared from γ-radiation reduced,silver/poly (acrylic acid) nanocomposites (Ag/PAA). Negatively surface charged nanocomposites were immobilized on different silica surfaces, namely quartz, Indium Tin Oxide-modified glass and ordinary glass. Characterization of the solution and bound form of the nanocomposites were done to evaluate the retention of their novel properties. The size distribution of the solution-phased Ag/PAA was assessed using dynamic light scattering (DLS). The surface morphology, spectroscopic and electronic properties of the multilayer films were characterized using atomic force microscopy (AFM), scanning electron microscopy (SEM), UV-vis spectroscopy, surface plasmon resonance (SPR) and cyclic voltammetry (CV).

scholarly journals High performing flexible optoelectronic devices using thin films of topological insulator

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Animesh Pandey ◽  
Reena Yadav ◽  
Mandeep Kaur ◽  
Preetam Singh ◽  
Anurag Gupta ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Nonlinear Optical ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Nonlinear Optical Properties ◽  
Metallic Surface ◽  
Strong Light ◽  
High Performing ◽  
Decay Times

AbstractTopological insulators (TIs) possess exciting nonlinear optical properties due to presence of metallic surface states with the Dirac fermions and are predicted as a promising material for broadspectral phodotection ranging from UV (ultraviolet) to deep IR (infrared) or terahertz range. The recent experimental reports demonstrating nonlinear optical properties are mostly carried out on non-flexible substrates and there is a huge demand for the fabrication of high performing flexible optoelectronic devices using new exotic materials due to their potential applications in wearable devices, communications, sensors, imaging etc. Here first time we integrate the thin films of TIs (Bi2Te3) with the flexible PET (polyethylene terephthalate) substrate and report the strong light absorption properties in these devices. Owing to small band gap material, evolving bulk and gapless surface state conduction, we observe high responsivity and detectivity at NIR (near infrared) wavelengths (39 A/W, 6.1 × 108 Jones for 1064 nm and 58 A/W, 6.1 × 108 Jones for 1550 nm). TIs based flexible devices show that photocurrent is linearly dependent on the incident laser power and applied bias voltage. Devices also show very fast response and decay times. Thus we believe that the superior optoelectronic properties reported here pave the way for making TIs based flexible optoelectronic devices.

Retention of Surface Structure Causes Lower Density in Atomic Layer Deposition of Amorphous Titanium Oxide Thin Films

2021 ◽  
Author(s):  
Benjamin Rich ◽  
Yael Etinger-Geller ◽  
G. Ciatto ◽  
A Katsman ◽  
Boaz Pokroy
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Structure ◽  
Titanium Oxide ◽  
Size Effects ◽  
Atomic Layer ◽  
Tio2 Films ◽  
Structural Modifications ◽  
Layer Deposition ◽  
Amorphous Tio2

Size effects and structural modifications in amorphous TiO2 films deposited by atomic layer deposition (ALD) were investigated. As with the previously investigated ALD-deposited Al2O3 system we found that the film’s...

scholarly journals Recent Advances in the Development of Nano-Sculpted Films by Magnetron Sputtering for Energy-Related Applications

Nanomaterials ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 2039 ◽  
Author(s):  
Adriano Panepinto ◽  
Rony Snyders
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Recent Progress ◽  
Dye Sensitized Solar Cells ◽  
Dye Sensitized ◽  
New Generation ◽  
Recent Experimental Work ◽  
Sensitized Solar Cells ◽  
Theoretical Results ◽  
Made In

In this paper, we overview the recent progress we made in the magnetron sputtering-based developments of nano-sculpted thin films intended for energy-related applications such as energy conversion. This paper summarizes our recent experimental work often supported by simulation and theoretical results. Specifically, the development of a new generation of nano-sculpted photo-anodes based on TiO2 for application in dye-sensitized solar cells is discussed.

scholarly journals Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 484
Author(s):  
Matthias Schuster ◽  
Dominik Stapf ◽  
Tobias Osterrieder ◽  
Vincent Barthel ◽  
Peter J. Wellmann
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Coarse Grained ◽  
High Porosity ◽  
Low Band Gap ◽  
Seeding Layer ◽  
X Ray ◽  
Face To Face ◽  
Copper Indium ◽  
Vis Spectroscopy

Copper indium gallium sulfo-selenide (CIGS) based solar cells show the highest conversion efficiencies among all thin-film photovoltaic competition. However, the absorber material manufacturing is in most cases dependent on vacuum-technology like sputtering and evaporation, and the use of toxic and environmentally harmful substances like H2Se. In this work, the goal to fabricate dense, coarse grained CuInSe2 (CISe) thin-films with vacuum-free processing based on nanoparticle (NP) precursors was achieved. Bimetallic copper-indium, elemental selenium and binary selenide (Cu2−xSe and In2Se3) NPs were synthesized by wet-chemical methods and dispersed in nontoxic solvents. Layer-stacks from these inks were printed on molybdenum coated float-glass-substrates via doctor-blading. During the temperature treatment, a face-to-face technique and mechanically applied pressure were used to transform the precursor-stacks into dense CuInSe2 films. By combining liquid phase sintering and pressure sintering, and using a seeding layer later on, issues like high porosity, oxidation, or selenium- and indium-depletion were overcome. There was no need for external Se atmosphere or H2Se gas, as all of the Se was directly in the precursor and could not leave the face-to-face sandwich. All thin-films were characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), X-ray diffraction (XRD), and UV/vis spectroscopy. Dense CISe layers with a thickness of about 2–3 µm and low band gap energies of 0.93–0.97 eV were formed in this work, which show potential to be used as a solar cell absorber.

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