Tailoring the ultrafast and nonlinear photonics of MXenes through elemental replacement

Nanoscale ◽  
2021 ◽  
Author(s):  
Hualong Chen ◽  
Lingfeng Gao ◽  
Omar A Al-Hartomy ◽  
Feng Zhang ◽  
Ahmed A. Al Ghamdi ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Optoelectronic Devices ◽  
Surface Termination ◽  
Chemical Surface ◽  
Elemental Compositions ◽  
New Generation ◽  
Unique Chemical ◽  
Nonlinear Photonics

Due to the outstanding electronic properties, unique chemical surface termination units and richness elemental compositions, MXenes have become promising candidates for developing new generation optoelectronic devices. However, there was still...

scholarly journals Design of Promising Heptacoordinated Organotin (IV) Complexes-PEDOT: PSS-Based Composite for New-Generation Optoelectronic Devices Applications

Polymers ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 1023
Author(s):  
María Elena Sánchez-Vergara ◽  
Leon Hamui ◽  
Elizabeth Gómez ◽  
Guillermo M. Chans ◽  
José Miguel Galván-Hidalgo
Keyword(s):  
Thin Films ◽  
Electronic Properties ◽  
Optoelectronic Devices ◽  
Density Variation ◽  
Structural Modifications ◽  
Mixed Ligands ◽  
Vis Spectroscopy ◽  
Group A ◽  
Poly Styrene Sulfonate ◽  
New Generation

The synthesis of four mononuclear heptacoordinated organotin (IV) complexes of mixed ligands derived from tridentated Schiff bases and pyrazinecarboxylic acid is reported. This organotin (IV) complexes were prepared by using a multicomponent reaction, the reaction proceeds in moderate to good yields (64% to 82%). The complexes were characterized by UV-vis spectroscopy, IR spectroscopy, mass spectrometry, 1H, 13C, and 119Sn nuclear magnetic resonance (NMR) and elemental analysis. The spectroscopic analysis revealed that the tin atom is seven-coordinate in solution and that the carboxyl group acts as monodentate ligand. To determine the effect of the substituent on the optoelectronic properties of the organotin (IV) complexes, thin films were deposited, and the optical bandgap was obtained. A bandgap between 1.88 and 1.98 eV for the pellets and between 1.23 and 1.40 eV for the thin films was obtained. Later, different types of optoelectronic devices with architecture “contacts up/base down” were manufactured and analyzed to compare their electrical behavior. The design was intended to generate a composite based on the synthetized heptacoordinated organotin (IV) complexes embedded on the poly(3,4-ethylenedyoxithiophene)-poly(styrene sulfonate) (PEDOT:PSS). A Schottky curve at low voltages (<1.5 mV) and a current density variation of as much as ~3 × 10−5 A/cm2 at ~1.1 mV was observed. A generated photocurrent was of approximately 10−7 A and a photoconductivity between 4 × 10−9 and 7 × 10−9 S/cm for all the manufactured structures. The structural modifications on organotin (IV) complexes were focused on the electronic nature of the substituents and their ability to contribute to the electronic delocalization via the π system. The presence of the methyl group, a modest electron donor, or the non-substitution on the aromatic ring, has a reduced effect on the electronic properties of the molecule. However, a strong effect in the electronic properties of the material can be inferred from the presence of electron-withdrawing substituents like chlorine, able to reduce the gap energies.

Theoretical characterization of the electronic properties of heterogeneous vertical stacks of 2D metal dichalcogenides containing one doped layer

2020 ◽  
Vol 22 (25) ◽  
pp. 14088-14098
Author(s):  
Amine Slassi ◽  
David Cornil ◽  
Jérôme Cornil
Keyword(s):  
Transition Metal ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Transition Metal Dichalcogenides ◽  
Optoelectronic Devices ◽  
Metal Dichalcogenides ◽  
Theoretical Characterization ◽  
New Generation

The rise of van der Waals hetero-structures based on transition metal dichalcogenides (TMDs) opens the door to a new generation of optoelectronic devices.

Diverse electronic properties of 2D layered Se-containing materials composed of quasi-1D atomic chains

2020 ◽  
Vol 22 (4) ◽  
pp. 2122-2129 ◽  
Author(s):  
Yawen Li ◽  
Yuanhui Sun ◽  
Guangren Na ◽  
Wissam A. Saidi ◽  
Lijun Zhang
Keyword(s):  
Electronic Properties ◽  
Optoelectronic Devices ◽  
Layered Materials ◽  
Two Dimensional ◽  
Next Generation ◽  
Atomic Chains ◽  
Significant Attention

The two-dimensional (2D) atomically thin layered materials have attracted significant attention for constructing next-generation integrated electronic and optoelectronic devices.

The electric field modulation of electronic properties in a type-II phosphorene/PbI2 van der Waals heterojunction

2019 ◽  
Vol 21 (15) ◽  
pp. 7765-7772 ◽  
Author(s):  
Yuting Wei ◽  
Fei Wang ◽  
Wenli Zhang ◽  
Xiuwen Zhang
Keyword(s):  
Solar Energy ◽  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Type Ii ◽  
Direct Bandgap ◽  
Field Modulation

The 0.52/0.83 eV direct bandgap of P/PbI2 possesses a type-II band alignment, can effectively be regulated to 0.90/1.54 eV using an external electric field in DFT/HSE06, and is useful for solar energy and optoelectronic devices.

Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet

2019 ◽  
Vol 21 (39) ◽  
pp. 22140-22148 ◽  
Author(s):  
Tuan V. Vu ◽  
Nguyen V. Hieu ◽  
Le T. P. Thao ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Graphene Sheet ◽  
2D Materials ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure ◽  
Two Dimensional Materials ◽  
Structural And Electronic Properties

van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.

New Generation Reaction Of H2 From H2O With Carbon-Bearing Ferrites At 300 °C

1994 ◽  
Vol 344 ◽  
Author(s):  
Noriko Hasegawa ◽  
Kazuhiro Akanuma ◽  
Taizo Sano ◽  
Masamichi Tsuji ◽  
Yutaka Tamaura
Keyword(s):  
Surface Layer ◽  
Waste Heat ◽  
Solid Phase ◽  
Decomposition Reaction ◽  
Carbon Layer ◽  
Pump System ◽  
Heat Pump System ◽  
C Decomposition ◽  
New Generation ◽  
Unique Chemical

AbstractThe carbon-bearing magnetite (CBM) was prepared by the carbon-deposition on the H2- treated magnetite with CO2 at 300 °C. The CBM reacted with H2O and evolved H2 gas at 300- 350 °C. The surface of the CBM was composed of a new iron(II)oxide / carbon layer (CIOlayer). X-ray diffractometry and chemical analysis showed that the CIOlayer was transformed to an amorphous carbide phase by allowing to stand in Ar stream at 300 °C, which is so reactive as to decompose H2O into H2. The mole ratio of the evolved H2 gas to the evolved CO2 was nearly equal to that in the carbide (Fe3C) decomposition reaction with H2O. During the H2O decomposition, oxygen ions are transferred to the surface layer forming iron oxide. When the carbon-bearing Ni(II)-ferrite (CBNF) was used as the solid phase, the hydrogen evolution reaction takes place without decreasing in the carbon content in the CBNF, and the evolved H2 volume was approximately 8 times higher than that evaluated from the oxidized amount of the iron ions in the CBNF. This result suggests that some amount of oxygen in the CBNF is released while allowing to stand the sample in Ar stream at 300 °C. These H2 evolution reactions can proceed at low temperature of around 300 °C. This will provide us the way to establish a unique chemical heat pump system, where the waste heat around 300 °C be transferred to chemical energy of H2. The surface layer composed of iron(II) oxide/carbon is the key compound for this reaction.

Composition-controlled synthesis of carbon-supported Pt–Co alloy nanoparticles and the origin of their ORR activity enhancement

2014 ◽  
Vol 16 (36) ◽  
pp. 19298-19306 ◽  
Author(s):  
Yige Zhao ◽  
Jingjun Liu ◽  
Yanhui Zhao ◽  
Feng Wang
Keyword(s):  
Surface Structures ◽  
Controlled Synthesis ◽  
Alloy Nanoparticles ◽  
Volcano Plot ◽  
Chemical Surface ◽  
Orr Activity ◽  
Specific Activities ◽  
Activity Enhancement ◽  
Alloy Catalysts ◽  
Unique Chemical

The mass-specific activities of the Pt–Co alloy catalysts manifest a typical double-volcano plot as a function of alloy compositions. The Pt76Co24 exhibits the best ORR performance, which is remarkably higher than that of the commercial Pt/C (E-TEK). The origin of the enhancement in the ORR activity may be substantially related to the unique chemical surface structures of catalysts.

The Bakerian Lecture, 1988 - Amorphous semiconductors: a new generation of electronic materials

1988 ◽  
Vol 420 (1859) ◽  
pp. 201-218 ◽  
Keyword(s):  
Thin Film ◽  
Electronic Properties ◽  
Carrier Transport ◽  
Field Effect Transistors ◽  
Consumer Products ◽  
Amorphous Semiconductors ◽  
Film Material ◽  
Large Area ◽  
Wide Range ◽  
New Generation

The review deals with the electronic properties and recent applications of amorphous silicon (a-Si), which can be regarded as the first member of a new generation of electronically viable thin-film materials. After a brief introduction to the structure and the distribution of electronic states in a-Si the preparation of the material by the decomposition of silane in a radio-frequency glow discharge is discussed. The presence of hydrogen in the deposition process is of crucial importance; saturation of defect states, particularly of dangling bonds in the growing structure, leads to a material with a remarkably low density of gap states. Effective substitutional doping from the gas phase now becomes possible with wide-ranging control of the electronic properties. A brief discussion of the doping mechanism in amorphous solids is followed by a summary of carrier transport mechanisms in a-Si, investigated by fast transient techniques. The possibility of doping in a-Si has removed a major limitation in the a-semiconductor field and has, during the past 10 years, led to an upsurge in applied interest in this electronically controllable thin film material. A summary of the present state of applied developments, many already in industrial production, is given. Two groups are discussed in some detail. The first, the photovoltaic development, is based on the a-Si p–i–n junction, and forms part of a wide range of consumer products, but larger area photovoltaic panels are now in production. In the second major development a-Si field effect transistors are used as the addressable elements in large area liquid crystal displays. Remarkable progress has been made with thin film colour displays for small portable television sets. The use of a-Si elements in addressable linear image sensing arrays for telefax applications, coupled with a-Si high-voltage transistor arrays in the associated printers, represents an important step towards an integrated a-Si technology in large-area applications.

scholarly journals Effect of an external electric field on the electronic properties of SnS2/PbI2 van der Waals heterostructures

RSC Advances ◽  
2017 ◽  
Vol 7 (41) ◽  
pp. 25582-25588 ◽  
Author(s):  
Yaqiang Ma ◽  
Xu Zhao ◽  
Mengmeng Niu ◽  
Xianqi Dai ◽  
Wei Li ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Future Development ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Control Technology ◽  
Van Der Waals Heterostructures ◽  
Advanced Control ◽  
The Future

The future development of optoelectronic devices will require an advanced control technology in electronic properties, for example by an external electric field (Efield).

scholarly journals Surface Termination Dependent Work Function and Electronic Properties of Ti3C2Tx MXene

2019 ◽  
Vol 31 (17) ◽  
pp. 6590-6597 ◽  
Author(s):  
Thorsten Schultz ◽  
Nathan C. Frey ◽  
Kanit Hantanasirisakul ◽  
Soohyung Park ◽  
Steven J. May ◽  
...  
Keyword(s):  
Work Function ◽  
Electronic Properties ◽  
Surface Termination
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