The Effects of Annealing on Doped P3HT Thin Films for Potential Electronic Applications

MRS Advances ◽  
2019 ◽  
Vol 4 (31-32) ◽  
pp. 1787-1792
Author(s):  
Faniya C. Doswell ◽  
Harold O. Lee ◽  
Jonathan J. Montes ◽  
Sam-Shajing Sun

ABSTRACTPolymeric conjugated materials are convenient for developing future soft-material-based semiconductors, conductors, electronic and optoelectronic devices due to their inherent features. Similar to their inorganic counterparts, the addition of certain minority molecules, or dopants, to polymeric conjugated materials can significantly alter the electronic and optoelectronic properties of the host conjugated polymers or composites. This allows for tunability of a variety of electronic and optoelectronic applications. One way to improve device performance is through the process of thermal annealing. Annealing allows for a polymer matrix to self-assemble into a lower energy state, which leads to an increase in crystallinity and higher charge mobility. Previous research does not explicitly define how dopants can affect this process. This study involves an evaluation of the effects of annealing with doped P3HT films to demonstrate changes in optoelectronic and electronic properties.

MRS Advances ◽  
2019 ◽  
Vol 4 (30) ◽  
pp. 1727-1732
Author(s):  
Jonathan J. Montes ◽  
Harold O. Lee ◽  
Faniya C. Doswell ◽  
Sam-Shajing Sun

ABSTRACTPolymeric conjugated materials are very promising for developing future soft material-based semiconductors, conductors, electronic and optoelectronic devices due to their inherent advantages such as flexibility, low-cost, ease of processability, and decreased harmful waste. Like their inorganic counterparts, the addition of certain dopants can significantly alter the electronic and optoelectronic properties of the host conjugated polymers or composites allowing modification for a variety of electronic/optoelectronic applications. One way to improve device performance is through the process of thermal annealing. Annealing allows for polymer matrices to self-assemble into a lower energy state which typically leads to increased crystallinity and higher charge mobility. In this work, we plan to evaluate the effects of annealing on doped P3HT films to understand its effects on optoelectronic and electronic properties focusing solely on crystallinity and charge carriers. Further understanding of the connection between annealing and doping in polymeric conjugated materials and thermoelectric properties will allow for an increase net output from multi-function materials and devices.


Polymers ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 1023
Author(s):  
María Elena Sánchez-Vergara ◽  
Leon Hamui ◽  
Elizabeth Gómez ◽  
Guillermo M. Chans ◽  
José Miguel Galván-Hidalgo

The synthesis of four mononuclear heptacoordinated organotin (IV) complexes of mixed ligands derived from tridentated Schiff bases and pyrazinecarboxylic acid is reported. This organotin (IV) complexes were prepared by using a multicomponent reaction, the reaction proceeds in moderate to good yields (64% to 82%). The complexes were characterized by UV-vis spectroscopy, IR spectroscopy, mass spectrometry, 1H, 13C, and 119Sn nuclear magnetic resonance (NMR) and elemental analysis. The spectroscopic analysis revealed that the tin atom is seven-coordinate in solution and that the carboxyl group acts as monodentate ligand. To determine the effect of the substituent on the optoelectronic properties of the organotin (IV) complexes, thin films were deposited, and the optical bandgap was obtained. A bandgap between 1.88 and 1.98 eV for the pellets and between 1.23 and 1.40 eV for the thin films was obtained. Later, different types of optoelectronic devices with architecture “contacts up/base down” were manufactured and analyzed to compare their electrical behavior. The design was intended to generate a composite based on the synthetized heptacoordinated organotin (IV) complexes embedded on the poly(3,4-ethylenedyoxithiophene)-poly(styrene sulfonate) (PEDOT:PSS). A Schottky curve at low voltages (<1.5 mV) and a current density variation of as much as ~3 × 10−5 A/cm2 at ~1.1 mV was observed. A generated photocurrent was of approximately 10−7 A and a photoconductivity between 4 × 10−9 and 7 × 10−9 S/cm for all the manufactured structures. The structural modifications on organotin (IV) complexes were focused on the electronic nature of the substituents and their ability to contribute to the electronic delocalization via the π system. The presence of the methyl group, a modest electron donor, or the non-substitution on the aromatic ring, has a reduced effect on the electronic properties of the molecule. However, a strong effect in the electronic properties of the material can be inferred from the presence of electron-withdrawing substituents like chlorine, able to reduce the gap energies.


2019 ◽  
Vol 16 (3) ◽  
pp. 253-260 ◽  
Author(s):  
Jieyun Wu ◽  
Qing Li ◽  
Wen Wang ◽  
Kaixin Chen

Organic conjugated materials have shown attractive applications due to their good optoelectronic properties, which enable them solution processing techniques in organic optoelectronic devices. Many conjugated materials have been investigated in polymer solar cells and organic field-effect transistors. Among those conjugated materials, Benzo[1,2-b:4,5-b′]dithiophene (BDT) is one of the most employed fused-ring building groups for the synthesis of conjugated materials. The symmetric and planar conjugated structure, tight and regular stacking of BDT can be expected to exhibit the excellent carrier transfer for optoelectronics. In this review, we summarize the recent progress of BDT-based conjugated polymers in optoelectronic devices. BDT-based conjugated materials are classified into onedimensional (1D) and two-dimensional (2D) BDT-based conjugated polymers. Firstly, we introduce the fundamental information of BDT-based conjugated materials and their application in optoelectronic devices. Secondly, the design and synthesis of alkyl, alkoxy and aryl-substituted BDT-based conjugated polymers are discussed, which enables the construction of one-dimensional and two-dimensional BDTbased conjugated system. In the third part, the structure modification, energy level tuning and morphology control and their influences on optoelectronic properties are discussed in detail to reveal the structure- property relationship. Overall, we hope this review can be a good reference for the molecular design of BDT-based semiconductor materials in optoelectronic devices.


2020 ◽  
Vol 11 (36) ◽  
pp. 5735-5749
Author(s):  
Sina Sabury ◽  
Tyler J. Adams ◽  
Margaret Kocherga ◽  
S. Michael Kilbey ◽  
Michael G. Walter

Nucleobase functionalities in conjugated, alternating copolymers participate in interbase hydrogen bonding, which promotes molecular assembly and organization in thin films and enhances optical and electronic properties.


Author(s):  
Erika Schutte ◽  
Jack Martin

Abstract An ellipsometry based measurement protocol was developed to evaluate changes to MEMS sensor surfaces which may occur during packaging using unpatterned test samples. This package-level technique has been used to measure the 0-20 Angstrom thin films that can form or deposit on die during the packaging process for a variety of packaging processing conditions. Correlations with device performance shows this to be a useful tool for packaged MEMS device and process characterization.


1997 ◽  
Author(s):  
A. G. MacDiarmid ◽  
H. L. Wang ◽  
F. Huang ◽  
J. K. Avlyanov ◽  
P. C. Wang

2006 ◽  
Vol 913 ◽  
Author(s):  
Young Way Teh ◽  
John Sudijono ◽  
Alok Jain ◽  
Shankar Venkataraman ◽  
Sunder Thirupapuliyur ◽  
...  

AbstractThis work focuses on the development and physical characteristics of a novel dielectric film for a pre-metal dielectric (PMD) application which induces a significant degree of tensile stress in the channel of a sub-65nm node CMOS structure. The film can be deposited at low temperatures to meet the requirements of NiSi integration while maintaining void-free gap fill and superior film quality such as moisture content and uniformity. A manufacturable and highly reliable oxide film has been demonstrated through both TCAD simulation and real device data, showing ~6% NMOS Ion-Ioff improvement; no Ion-Ioff improvement or degradation on PMOS. A new concept has been proposed to explain the PMD strain effect on device performance improvement. Improvement in Hot Carrier immunity is observed compared to similar existing technologies using high density plasma (HDP) deposition techniques.


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