scholarly journals Direct Growth of Two Dimensional Molybdenum Disulfide on Flexible Ceramic Substrate

Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1456 ◽  
Author(s):  
Yixiong Zheng ◽  
Chunyan Yuan ◽  
Sichen Wei ◽  
Hyun Kim ◽  
Fei Yao ◽  
...  
Keyword(s):  
Flexible Electronics ◽  
High Performance ◽  
Crystal Size ◽  
2D Materials ◽  
Flexible Substrate ◽  
Ceramic Substrate ◽  
Zirconia Ceramic ◽  
Two Dimensional ◽  
Stable Chemical ◽  
Direct Growth

In this paper, we report the first successful demonstration of the direct growth of high-quality two-dimensional (2D) MoS2 semiconductors on a flexible substrate using a 25-μm-thick Yttria-stabilized zirconia ceramic substrate. Few-layered MoS2 crystals grown at 800 °C showed a uniform crystal size of approximately 50 μm, which consisted of about 10 MoS2 layers. MoS2 crystals were characterized using energy-dispersive X-ray spectroscopy. Raman spectroscopy was performed to investigate the crystal quality under bending conditions. The Raman mapping revealed a good uniformity with a stable chemical composition of the MoS2 crystals. Our approach offers a simple and effective route to realize various flexible electronics based on MoS2.Our approach can be applied for MoS2 growth and for other 2D materials. Therefore, it offers a new opportunity that allows us to demonstrate high-performance flexible electronic/optoelectronic applications in a less expensive, simpler, and faster manner without sacrificing the intrinsic performance of 2D materials.

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

Controllable Synthesis of Ultrathin Layered Transition Metallic Hydroxide/Zeolitic Imidazolate Framework-67 Hybrid Nanosheets for High-Performance Supercapacitors

2021 ◽  
Author(s):  
Chunli Liu ◽  
Yang Bai ◽  
Ji Wang ◽  
Ziming Qiu ◽  
Huan Pang
Keyword(s):  
Charge Transfer ◽  
Energy Conversion ◽  
High Performance ◽  
2D Materials ◽  
Two Dimensional ◽  
Controllable Synthesis ◽  
Zeolitic Imidazolate Framework ◽  
Fast Charge ◽  
Energy Conversion And Storage ◽  
And Storage

Two-dimensional (2D) materials with structures having diverse features are promising for application in energy conversion and storage. A stronger layered orientation can guarantee fast charge transfer along the 2D planes...

Nanopillar modified high-sensitivity asymmetric Graphene-GaN photodetector

Nanoscale ◽  
2021 ◽  
Author(s):  
Chang Liu ◽  
Xiaodong Li ◽  
Tiangui Hu ◽  
Wenkai Zhu ◽  
Faguang Yan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Performance ◽  
2D Materials ◽  
Three Dimensional ◽  
High Sensitivity ◽  
Optical And Electrical Properties ◽  
Two Dimensional

Integration of two dimensional (2D) materials with three dimensional (3D) semiconductors reveals intriguing optical and electrical properties that surpass those of the original materials. Here we report the high performance...

Fe-42%Ni austenitic alloy as a novel substrate for flexible electronics

2011 ◽  
Vol 1285 ◽  
Author(s):  
Xiaoxiao Ma ◽  
Shahrukh A. Khan ◽  
Nackbong Choi ◽  
Miltiadis Hatalis ◽  
Mark Robinson
Keyword(s):  
Flexible Electronics ◽  
Field Effect ◽  
High Performance ◽  
Flexible Substrate ◽  
Good Choice ◽  
Annealing Process ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Bottom Gate ◽  
Igzo Tft

ABSTRACTWe report Fe-42%Ni as a novel high-performance substrate for a-IGZO TFT fabrication after evaluating 8 different metals for chemical compatibility, mechanical flexing and dimensional stability. Excellent flexibility and rollability indicates that Fe-42%Ni would be a good choice as flexible substrate for R2R process. Pre-annealing process for stabilizing the substrate is studied and applied to the Fe-42%Ni foil before TFT fabrication. Staggered bottom gate a-IGZO TFTs which were fabricated on this substrate have field effect mobility of 12 cm2/V.s, threshold voltage of 2V, sub-threshold swing of 0.6V/decade and on/off current ratio exceeding 107.

scholarly journals Emerging 2D Materials and Their Van Der Waals Heterostructures

Nanomaterials ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 579 ◽  
Author(s):  
Antonio Di Bartolomeo
Keyword(s):  
Water Splitting ◽  
High Performance ◽  
State Of The Art ◽  
2D Materials ◽  
Van Der Waals ◽  
Functional Materials ◽  
Building Blocks ◽  
Theoretical Research ◽  
Two Dimensional ◽  
Tremendous Amount

Two-dimensional (2D) materials and their van der Waals heterojunctions offer the opportunity to combine layers with different properties as the building blocks to engineer new functional materials for high-performance devices, sensors, and water-splitting photocatalysts. A tremendous amount of work has been done thus far to isolate or synthesize new 2D materials as well as to form new heterostructures and investigate their chemical and physical properties. This article collection covers state-of-the-art experimental, numerical, and theoretical research on 2D materials and on their van der Waals heterojunctions for applications in electronics, optoelectronics, and energy generation.

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

scholarly journals Recent Progress of Two-Dimensional Thermoelectric Materials

2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Delong Li ◽  
Youning Gong ◽  
Yuexing Chen ◽  
Jiamei Lin ◽  
Qasim Khan ◽  
...  
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
2D Materials ◽  
Electrical Power ◽  
Transition Metal Dichalcogenides ◽  
Two Dimensional ◽  
Research Attention ◽  
Metal Dichalcogenides ◽  
New Applications ◽  
Theoretical Simulations

AbstractThermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical power. Moreover, the thermoelectric properties of traditional inorganic and organic materials have been significantly improved over the past few decades. Among these compounds, layered two-dimensional (2D) materials, such as graphene, black phosphorus, transition metal dichalcogenides, IVA–VIA compounds, and MXenes, have generated a large research attention as a group of potentially high-performance thermoelectric materials. Due to their unique electronic, mechanical, thermal, and optoelectronic properties, thermoelectric devices based on such materials can be applied in a variety of applications. Herein, a comprehensive review on the development of 2D materials for thermoelectric applications, as well as theoretical simulations and experimental preparation, is presented. In addition, nanodevice and new applications of 2D thermoelectric materials are also introduced. At last, current challenges are discussed and several prospects in this field are proposed.

Directly deposited MoS2thin film electrodes for high performance supercapacitors

2015 ◽  
Vol 3 (47) ◽  
pp. 24049-24054 ◽  
Author(s):  
Nitin Choudhary ◽  
Mumukshu Patel ◽  
Yee-Hsien Ho ◽  
Narendra B. Dahotre ◽  
Wonki Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
High Performance ◽  
Cyclic Stability ◽  
Two Dimensional ◽  
Polymer Substrates ◽  
Energy Devices ◽  
Direct Deposition ◽  
Cu Foil

We demonstrate the direct deposition of two-dimensional (2D) MoS2thin film on Cu-foil and polymer substrates, exhibiting an excellent capacitance and outstanding cyclic stability. The MoS2based supercapacitors will enable new opportunities in flexible electronics and energy devices.

High-Performance Solution-Processed Ti3C2Tx MXenes Doped ZnSnO Thin-Film Transistors via the Formation of a Two-Dimensional Electron Gas

2021 ◽  
Author(s):  
Tianshi Zhao ◽  
Chenguang Liu ◽  
Chun Zhao ◽  
Wangying Xu ◽  
Yina Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Water Solubility ◽  
2D Materials ◽  
Electron Gas ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Two Dimensional Electron Gas ◽  
Dimensional Electron Gas

MXenes are a large class of two-dimensional (2D) materials widely studied recently since they have good water solubility and be able to tune the work function (WF) of the materials...

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