Nanopillar modified high-sensitivity asymmetric Graphene-GaN photodetector

Nanoscale ◽  
2021 ◽  
Author(s):  
Chang Liu ◽  
Xiaodong Li ◽  
Tiangui Hu ◽  
Wenkai Zhu ◽  
Faguang Yan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Performance ◽  
2D Materials ◽  
Three Dimensional ◽  
High Sensitivity ◽  
Optical And Electrical Properties ◽  
Two Dimensional

Integration of two dimensional (2D) materials with three dimensional (3D) semiconductors reveals intriguing optical and electrical properties that surpass those of the original materials. Here we report the high performance...

The charge carrier dynamics, efficiency and stability of two-dimensional material-based perovskite solar cells

2019 ◽  
Vol 48 (18) ◽  
pp. 4854-4891 ◽  
Author(s):  
Bing Wang ◽  
James Iocozzia ◽  
Meng Zhang ◽  
Meidan Ye ◽  
Shicheng Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Charge Carrier ◽  
2D Materials ◽  
Perovskite Solar Cells ◽  
Carrier Dynamics ◽  
Optical And Electrical Properties ◽  
Two Dimensional ◽  
Charge Carrier Dynamics ◽  
Recent Advances

Recent advances in the use of two-dimensional (2D) materials for perovskites solar cells (PSCs) are summarized. The effects of their unique optical and electrical properties on the charge carrier dynamics of PSCs are detailed.

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

scholarly journals Polarization-sensitive photodetectors based on three-dimensional molybdenum disulfide (MoS2) field-effect transistors

Nanophotonics ◽  
2020 ◽  
Vol 9 (16) ◽  
pp. 4719-4728
Author(s):  
Tao Deng ◽  
Shasha Li ◽  
Yuning Li ◽  
Yang Zhang ◽  
Jingye Sun ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Three Dimensional ◽  
Polarized Light ◽  
Optical Field ◽  
Two Dimensional ◽  
Polarization Ratio ◽  
Two Dimensional Materials

AbstractThe molybdenum disulfide (MoS2)-based photodetectors are facing two challenges: the insensitivity to polarized light and the low photoresponsivity. Herein, three-dimensional (3D) field-effect transistors (FETs) based on monolayer MoS2 were fabricated by applying a self–rolled-up technique. The unique microtubular structure makes 3D MoS2 FETs become polarization sensitive. Moreover, the microtubular structure not only offers a natural resonant microcavity to enhance the optical field inside but also increases the light-MoS2 interaction area, resulting in a higher photoresponsivity. Photoresponsivities as high as 23.8 and 2.9 A/W at 395 and 660 nm, respectively, and a comparable polarization ratio of 1.64 were obtained. The fabrication technique of the 3D MoS2 FET could be transferred to other two-dimensional materials, which is very promising for high-performance polarization-sensitive optical and optoelectronic applications.

Controllable Synthesis of Ultrathin Layered Transition Metallic Hydroxide/Zeolitic Imidazolate Framework-67 Hybrid Nanosheets for High-Performance Supercapacitors

2021 ◽  
Author(s):  
Chunli Liu ◽  
Yang Bai ◽  
Ji Wang ◽  
Ziming Qiu ◽  
Huan Pang
Keyword(s):  
Charge Transfer ◽  
Energy Conversion ◽  
High Performance ◽  
2D Materials ◽  
Two Dimensional ◽  
Controllable Synthesis ◽  
Zeolitic Imidazolate Framework ◽  
Fast Charge ◽  
Energy Conversion And Storage ◽  
And Storage

Two-dimensional (2D) materials with structures having diverse features are promising for application in energy conversion and storage. A stronger layered orientation can guarantee fast charge transfer along the 2D planes...

scholarly journals High-Performance On-Chip Silicon Beamsplitter Based on Subwavelength Metamaterials for Enhanced Fabrication Tolerance

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1304
Author(s):  
Raquel Fernández de Cabo ◽  
David González-Andrade ◽  
Pavel Cheben ◽  
Aitor V. Velasco
Keyword(s):  
Integrated Circuits ◽  
Fundamental Mode ◽  
High Performance ◽  
Three Dimensional ◽  
High Sensitivity ◽  
Power Splitting ◽  
Excess Loss ◽  
Power Splitters ◽  
On Chip ◽  
Efficient Power

Efficient power splitting is a fundamental functionality in silicon photonic integrated circuits, but state-of-the-art power-division architectures are hampered by limited operational bandwidth, high sensitivity to fabrication errors or large footprints. In particular, traditional Y-junction power splitters suffer from fundamental mode losses due to limited fabrication resolution near the junction tip. In order to circumvent this limitation, we propose a new type of high-performance Y-junction power splitter that incorporates subwavelength metamaterials. Full three-dimensional simulations show a fundamental mode excess loss below 0.1 dB in an ultra-broad bandwidth of 300 nm (1400–1700 nm) when optimized for a fabrication resolution of 50 nm, and under 0.3 dB in a 350 nm extended bandwidth (1350–1700 nm) for a 100 nm resolution. Moreover, analysis of fabrication tolerances shows robust operation for the fundamental mode to etching errors up to ± 20 nm. A proof-of-concept device provides an initial validation of its operation principle, showing experimental excess losses lower than 0.2 dB in a 195 nm bandwidth for the best-case resolution scenario (i.e., 50 nm).

scholarly journals Pulsed Electromagnetic Cross-Well Exploration for Monitoring Permafrost and Examining the Processes of Its Geocryological Changes

Geosciences ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 60
Author(s):  
Viacheslav Glinskikh ◽  
Oleg Nechaev ◽  
Igor Mikhaylov ◽  
Kirill Danilovskiy ◽  
Vladimir Olenchenko
Keyword(s):  
High Performance ◽  
Geophysical Methods ◽  
Three Dimensional ◽  
High Sensitivity ◽  
Data Interpretation ◽  
Industrial Facilities ◽  
Wide Range ◽  
Vector Finite Element ◽  
A New Technique ◽  
Pulsed Electromagnetic

This paper is dedicated to the topical problem of examining permafrost’s state and the processes of its geocryological changes by means of geophysical methods. To monitor the cryolithozone, we proposed and scientifically substantiated a new technique of pulsed electromagnetic cross-well sounding. Based on the vector finite-element method, we created a mathematical model of the cross-well sounding process with a pulsed source in a three-dimensional spatially heterogeneous medium. A high-performance parallel computing algorithm was developed and verified. Through realistic geoelectric models of permafrost with a talik under a highway, constructed following the results of electrotomography field data interpretation, we numerically simulated the pulsed sounding on the computing resources of the Siberian Supercomputer Center of SB RAS. The simulation results suggest the proposed system of pulsed electromagnetic cross-well monitoring to be characterized by a high sensitivity to the presence and dimensions of the talik. The devised approach can be oriented to addressing a wide range of issues related to monitoring permafrost rocks under civil and industrial facilities, buildings, and constructions.

Two-dimensional SnS2 materials as high-performance NO2 sensors with fast response and high sensitivity

2018 ◽  
Vol 255 ◽  
pp. 616-621 ◽  
Author(s):  
Young-Ho Kim ◽  
Duy-Thach Phan ◽  
Seungbae Ahn ◽  
Ki-Hun Nam ◽  
Cheol-Min Park ◽  
...  
Keyword(s):  
High Performance ◽  
High Sensitivity ◽  
Fast Response ◽  
Two Dimensional
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