Directly deposited MoS2thin film electrodes for high performance supercapacitors

2015 ◽  
Vol 3 (47) ◽  
pp. 24049-24054 ◽  
Author(s):  
Nitin Choudhary ◽  
Mumukshu Patel ◽  
Yee-Hsien Ho ◽  
Narendra B. Dahotre ◽  
Wonki Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
High Performance ◽  
Cyclic Stability ◽  
Two Dimensional ◽  
Polymer Substrates ◽  
Energy Devices ◽  
Direct Deposition ◽  
Cu Foil

We demonstrate the direct deposition of two-dimensional (2D) MoS2thin film on Cu-foil and polymer substrates, exhibiting an excellent capacitance and outstanding cyclic stability. The MoS2based supercapacitors will enable new opportunities in flexible electronics and energy devices.

Two-dimensional GeSe for high performance thin-film solar cells

2018 ◽  
Vol 6 (12) ◽  
pp. 5032-5039 ◽  
Author(s):  
Xingshuai Lv ◽  
Wei Wei ◽  
Cong Mu ◽  
Baibiao Huang ◽  
Ying Dai
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Schottky Barrier ◽  
High Performance ◽  
Thin Film Solar Cells ◽  
Two Dimensional ◽  
Photovoltaic Devices ◽  
Promising Candidate

Multilayer GeSe can be a promising candidate for flexible photovoltaic devices because of the low Schottky barrier at the back electrode and high PCE of ∼18%.

scholarly journals Sequential Oxidation Strategy for the Fabrication of Liquid Metal Electrothermal Thin Film with Desired Printing and Functional Property

Micromachines ◽  
2021 ◽  
Vol 12 (12) ◽  
pp. 1539
Author(s):  
Jun-Heng Fu ◽  
Xu-Dong Zhang ◽  
Peng Qin ◽  
Jing Liu
Keyword(s):  
Thin Film ◽  
Liquid Metal ◽  
Composite Film ◽  
Flexible Electronics ◽  
High Performance ◽  
Polyimide Film ◽  
Great Promise ◽  
Metal Composite ◽  
Resistive Layer ◽  
Film Substrate

Room temperature liquid metal (LM) showcases a great promise in the fields of flexible functional thin film due to its favorable characteristics of flexibility, inherent conductivity, and printability. Current fabrication strategies of liquid metal film are substrate structure specific and sustain from unanticipated smearing effects. Herein, this paper reported a facile fabrication of liquid metal composite film via sequentially regulating oxidation to change the adhesion characteristics, targeting the ability of electrical connection and electrothermal conversion. The composite film was then made of the electrically resistive layer (oxidizing liquid metal) and the insulating Polyimide film (PI film) substrate, which has the advantages of electrical insulation and ultra-wide temperature working range, and its thickness is only 50 μm. The electrical resistance of composite film can maintain constant for 6 h and could work normally. Additionally, the heating film exhibited excellent thermal switching characteristics that can reach temperature equilibrium within 100 s, and recovery to ambient temperature within 50 s. The maximum working temperature of the as-prepared film is 115 °C, which is consistent with the result of the theoretical calculation, demonstrating a good electrothermal conversion capability. Finally, the heating application under extreme low temperature (−196 °C) was achieved. This conceptual study showed the promising value of the prototype strategy to the specific application areas such as the field of smart homes, flexible electronics, wearable thermal management, and high-performance heating systems.

scholarly journals Growth of large-size-two-dimensional crystalline pentacene grains for high performance organic thin film transistors

AIP Advances ◽  
2012 ◽  
Vol 2 (2) ◽  
pp. 022138 ◽  
Author(s):  
Chuan Du ◽  
Liqiang Li ◽  
Wenchong Wang ◽  
Jidong Zhang ◽  
Donghang Yan ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Two Dimensional ◽  
Organic Thin Film ◽  
Large Size

Delamination-Based Measurement and Prediction of the Adhesion Energy of Thin Film/Substrate Interfaces

2017 ◽  
Vol 139 (2) ◽  
Author(s):  
Liangliang Zhu ◽  
Xi Chen
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Current Method ◽  
Adhesion Energy ◽  
Two Dimensional ◽  
Soft Substrate ◽  
Interface Adhesion ◽  
Compliant Substrates ◽  
And Performance ◽  
Film Substrate

With the rapid emerging of two-dimensional (2D) micro/nanomaterials and their applications in flexible electronics and microfabrication, adhesion between thin film and varying substrates is of great significance for fabrication and performance of micro devices and for the understanding of the buckle delamination mechanics. However, the adhesion energy remains to be difficult to be measured, especially for compliant substrates. We propose a simple methodology to deduce the adhesion energy between a thin film and soft substrate based on the successive or simultaneous emergence of wrinkles and delamination. The new metrology does not explicitly require the knowledge of the Young's modulus, Poisson's ratio, and thickness of the 2D material, the accurate measurement of which could be a challenge in many cases. Therefore, the uncertainty of the results of the current method is notably reduced. Besides, for cases where the delamination width is close to the critical wrinkle wavelength of the thin film/substrate system, the procedure can be further simplified. The simple and experimentally easy methodology developed here is promising for determining/estimating the interface adhesion energy of a variety of thin film/soft substrate systems.

Graphene oxide films, fibers, and membranes

2016 ◽  
Vol 5 (4) ◽  
Author(s):  
Rodolfo Cruz-Silva ◽  
Morinobu Endo ◽  
Mauricio Terrones
Keyword(s):  
Graphene Oxide ◽  
High Performance ◽  
State Of The Art ◽  
Thermal Reduction ◽  
Two Dimensional ◽  
Processing Conditions ◽  
Electrically Conductive ◽  
Conductive Material ◽  
Energy Devices ◽  
Low Costs

AbstractGraphene oxide (GO) macroscopic films, fibers, and membranes have become important applications of this interesting two-dimensional material due to their specific properties and great potential as new high-performance materials. After chemical or thermal reduction, GO is transformed into an electrically conductive material termed reduced GO (RGO). These materials hold great potential because they can be prepared in large quantities at low costs, and consequently they are particularly suitable for applications in packaging, textiles, energy devices, and separation technologies. In the following years, the use of GO- and RGO-based films, fibers, and membranes is expected to grow; however, several challenges regarding its processing conditions must be resolved. In this review, we addressed some of the recent work regarding these important technologies and summarized the state of the art of GO films, fibers, and membranes.

scholarly journals Enormous thermoelectric power factor of ZrTe2/SrTiO3 heterostructure

2021 ◽  
Author(s):  
Chun Hung Suen ◽  
Songhua Cai ◽  
Hui Li ◽  
Xiaodan Tang ◽  
Huichao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermoelectric Power ◽  
Power Factor ◽  
High Performance ◽  
Transition Metal Dichalcogenides ◽  
Thermoelectric Device ◽  
Two Dimensional ◽  
Dimensional Electron ◽  
Thermoelectric Power Factor ◽  
Dimensional Electron Gas

Abstract Achieving high thermoelectric power factor in thin film heterostructures is essential for integrated and miniaturized thermoelectric device applications. In this work, we demonstrate a mechanism to enhance thermoelectric power factor through coupling the interfacial confined two-dimensional electron gas (2DEG) with thin film conductivity in a transition metal dichalcogenides-SrTiO3 heterostructure. Owing to the formed conductive interface with two-dimensional electron confinement effect and the elevated conductivity, the ZrTe2/SrTiO3 (STO) heterostructure presents enormous thermoelectric power factor as high as 4×10^5 μW cm^(-1) K^(-2) at 20 K and 4800 μW cm^(-1) K^(-2) at room temperature. Interfacial reaction induced degradation of Ti cations valence number from Ti4+ to Ti3+ is attributed to be responsible for the formation of the quasi-two-dimensional electrons at the interface which results in very large Seebeck coefficient; and the enhanced electrical conductivity is suggested to be originated from the charge transfer induced doping in the ZrTe2. By taking the thermal conductivity of STO substrate as a reference, the effective zT value of this heterostructure can reach 15 at 300 K. This superior thermoelectric property makes this heterostructure a promising candidate for future thermoelectric device, and more importantly, paves a new pathway to design promising high-performance thermoelectric systems.

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