Fe-42%Ni austenitic alloy as a novel substrate for flexible electronics

2011 ◽  
Vol 1285 ◽  
Author(s):  
Xiaoxiao Ma ◽  
Shahrukh A. Khan ◽  
Nackbong Choi ◽  
Miltiadis Hatalis ◽  
Mark Robinson
Keyword(s):  
Flexible Electronics ◽  
Field Effect ◽  
High Performance ◽  
Flexible Substrate ◽  
Good Choice ◽  
Annealing Process ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Bottom Gate ◽  
Igzo Tft

ABSTRACTWe report Fe-42%Ni as a novel high-performance substrate for a-IGZO TFT fabrication after evaluating 8 different metals for chemical compatibility, mechanical flexing and dimensional stability. Excellent flexibility and rollability indicates that Fe-42%Ni would be a good choice as flexible substrate for R2R process. Pre-annealing process for stabilizing the substrate is studied and applied to the Fe-42%Ni foil before TFT fabrication. Staggered bottom gate a-IGZO TFTs which were fabricated on this substrate have field effect mobility of 12 cm2/V.s, threshold voltage of 2V, sub-threshold swing of 0.6V/decade and on/off current ratio exceeding 107.

scholarly journals Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

Electronics ◽  
2019 ◽  
Vol 8 (9) ◽  
pp. 955 ◽  
Author(s):  
Hyunjae Lee ◽  
Seunghyun Ha ◽  
Jin-Hyuk Bae ◽  
In-Man Kang ◽  
Kwangeun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Structural Characteristics ◽  
Sol Gel ◽  
Critical Role ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Current Ratio

The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO2 films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO2 TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm2/Vs, 0.87 V/decade, and 107, respectively.

Metal Oxide-based (ZnO and IZO) Thin Film Transistors and Circuits

2008 ◽  
Vol 1109 ◽  
Author(s):  
Shahrukh Akbar Khan ◽  
Miltiadis K. Hatalis
Keyword(s):  
Field Effect ◽  
Metal Layer ◽  
Rf Sputtering ◽  
Channel Length ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Active Matrix ◽  
Temperature Deposition ◽  
Izo Thin Film ◽  
Bottom Gate

AbstractThis work emphasizes room temperature deposition and fabrication of staggered bottom-gate ZnO and IZO TFTs. We synthesized these oxide thin films by RF sputtering in an Ar/Oxygen ambience with no intentional heating of the substrates. Bottom gate staggered structure ZnO TFTs were fabricated (Ti/Au/Ti gate and Au/Ti source/drain) and characterized. ZnO TFTs retained well-behaved transfer characteristics down to a channel length of 4 μm with field effect mobility of 5 cm2/V.s, on/off current ratio exceeding 106 and threshold voltage around -5V. The IZO TFTs, with ITO as gate metal layer and highly conducting amorphous IZO forming the source/drain material had reasonably high field effect mobility of 20 cm2/V.s and on/off current ratio exceeding 106, which are well suited for active matrix display applications. Finally, to demonstrate the viability of oxide-based device integration, simple circuits such as inverters and pseudo-logic circuits are designed, fabricated and tested.

Next Generation of Thin Film Transistors Based on Zinc Oxide

2004 ◽  
Vol 811 ◽  
Author(s):  
E. Fortunato ◽  
P. Barquinha ◽  
A. Pimentel ◽  
A. Gonçalves ◽  
L. Pereira ◽  
...  
Keyword(s):  
Thin Film ◽  
Flexible Electronics ◽  
Field Effect ◽  
High Performance ◽  
Room Temperature ◽  
Low Cost ◽  
Thin Film Transistor ◽  
Optoelectronic Device ◽  
Field Effect Mobility ◽  
Next Generation

ABSTRACTWe report high performance ZnO thin film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19 V, a field effect mobility of 28 cm2/Vs, a gate voltage swing of 1.39 V/decade and an on/off ratio of 3×105. The ZnO-TFT present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The combination of transparency, high field-effect mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of invisible and flexible electronics.

Instability of OTFT with Organic Gate Dielectrics

2007 ◽  
Vol 124-126 ◽  
pp. 407-410
Author(s):  
Sang Chul Lim ◽  
Seong Hyun Kim ◽  
Gi Heon Kim ◽  
Jae Bon Koo ◽  
Jung Hun Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectrics ◽  
Gate Insulator ◽  
Semiconductor Layer ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Dielectric Thickness ◽  
Inverter Circuit

We report the effects of instability with gate dielectrics of pentacene thin film transistors (OTFTs) inverter circuits. We used to the UV sensitive curable resin and poly-4-vinylphenol(PVP) by gate dielectrics. The inverter supply bias is VDD= -40 V. For a given dielectric thickness and applied voltage, pentacene OTFTs with inverter circuits measurements field effect mobility, on-off current ratio, Vth. The field effect mobility 0.03~0.07 cm2/Vs, and the threshold voltage is -3.3 V ~ -8.8 V. The on- and off-state currents ratio is about 103~106. From the OTFT device and inverter circuit measurement, we observed hysteresis behavior was caused by interface states of between the gate insulator and the pentacene semiconductor layer.

Thin Film Transistors on Plastic Substrates Using Silicon Deposited by Microwave ECR-CVD

2003 ◽  
Vol 769 ◽  
Author(s):  
Lihong Teng ◽  
Wayne A. Anderson
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Silicon Films ◽  
Subthreshold Swing ◽  
Field Effect Mobility ◽  
Current Ratio ◽  
Saturation Field ◽  
Plastic Substrates

AbstractThe properties of thin film transistors (TFT's) on plastic substrates with active silicon films deposited by microwave ECR-CVD were studied. Two types of plastic were used, PEEK and polyimide. The a-Si:H TFT deposited at 200°C on polyimide substrates showed a saturation field effect mobility of 4.5 cm2/V-s, a threshold voltage of 3.7 V, a subthreshold swing of 0.69 V/dec and an ON/OFF current ratio of 7.9×106, while the TFT fabricated on PEEK at 200°C showed a saturation field effect mobility of 3.9 cm2/V-s, a threshold voltage of 4.1 V, a subthreshold swing of 0.73 V/dec and an ON/OFF current ratio of 4×106. Comparison is made to TFT's with the Si deposited at 400°C on glass.

Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT

1994 ◽  
Vol 336 ◽  
Author(s):  
Y. Chida ◽  
M. Kondo ◽  
G. Ganguly ◽  
A. Matsuda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
High Mobility ◽  
High Electron ◽  
Field Effect Mobility ◽  
Si Substrate ◽  
High Electron Mobility ◽  
Deposition Conditions

ABSTRACTHigh electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.

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