scholarly journals Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity

Nanomaterials ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 607 ◽  
Author(s):  
Zaina Algarni ◽  
Abhay Singh ◽  
Usha Philipose
Keyword(s):  
Electron Transport ◽  
Chemical Vapor ◽  
Amorphous Semiconductors ◽  
High Rate ◽  
Simple Strategy ◽  
Current Voltage ◽  
Temperature Ramp ◽  
Low Dimensional ◽  
Work Done ◽  
Insb Nanowires

Although various synthesis and characterization strategies have been employed for the synthesis of crystalline nanowires, there is very little work done on development of low-dimensional amorphous semiconductors. This paper presents a simple strategy to grow amorphous InSb (a-InSb) nanowires (NWs) in a chemical vapor deposition (CVD) system. The NWs were grown on Si substrate coated with indium film and the lack of crystallinity in the as-grown stoichiometric NWs was ascertained by Raman spectroscopy and electron transport measurements. A model proposed to explain the amorphous NW growth mechanism takes into account the fact that NW growth was carried out at the high temperature ramp-up rate of 75 ∘C/min. This high rate is believed to affect the growth kinematics and determine the arrangement of atoms in the growing NW. Raman spectrum of the as-grown sample shows a broad peak around 155 cm−1, indicative of the presence of high density of homopolar Sb-Sb bonds in the amorphous matrix. It was also found that high intensity laser light induces localized crystallization of the NW, most likely due to radiation-stimulated diffusion of defects in a-InSb. The nonlinear trend of the current-voltage characteristics for individually contacted a-InSb NWs was analyzed to prove that the non-linearity is not induced by Schottky contacts. At high bias fields, space charge limited conduction was the proposed electron transport mechanism. Post-growth annealing of the as-grown a-InSb NWs was found to be very effective in causing the NWs to undergo a phase transition from amorphous to crystalline.

scholarly journals A Review on the Low-Dimensional and Hybridized Nanostructured Diamond Films

2015 ◽  
Vol 2015 ◽  
pp. 1-15 ◽  
Author(s):  
Hongdong Li ◽  
Shaoheng Cheng ◽  
Jia Li ◽  
Jie Song
Keyword(s):  
High Performance ◽  
Diamond Films ◽  
Chemical Properties ◽  
Chemical Vapor ◽  
Industrial Applications ◽  
Research Field ◽  
Hybrid Nanostructures ◽  
High Rate ◽  
Low Dimensional ◽  
P Type

In the last decade, besides the breakthrough of high-rate growth of chemical vapor deposited single-crystal diamonds, numerous nanostructured diamond films have been rapidly developed in the research fields of the diamond-based sciences and industrial applications. The low-dimensional diamonds of two-dimensional atomic-thick nanofilms and nanostructural diamond on the surface of bulk diamond films have been theoretically and experimentally investigated. In addition, the diamond-related hybrid nanostructures of n-type oxide/p-type diamond and n-type nitride/p-type diamond, having high performance physical and chemical properties, are proposed for further applications. In this review, we first briefly introduce the three categories of diamond nanostructures and then outline the current advances in these topics, including their design, fabrication, characterization, and properties. Finally, we address the remaining challenges in the research field and the future activities.

Diameter Dependent Current-Voltage Characteristics of InSb Nanowires

2011 ◽  
Vol 1350 ◽  
Author(s):  
Miroslav Penchev ◽  
Jiebin Zhong ◽  
Jian Lin ◽  
Cengiz S. Ozkan ◽  
Mihrimah Ozkan
Keyword(s):  
Electron Microscopy ◽  
Indium Antimonide ◽  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Nanowire Diameter ◽  
Back Gate ◽  
Transmission Electron ◽  
Current Voltage ◽  
Insb Nanowires

ABSTRACTSingle crystalline Indium Antimonide (InSb) nanowires were synthesized by chemical vapor deposition (CVD) technique, using gold (Au) nanoparticles as catalyst, via a vapor liquid solid mechanism. Structural properties of the as-grown InSb nanowires were investigated by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Nanowire field effect transistors (NWFETs) were fabricated in back-gate configuration, on Si/SO2 substrates, using SiO2 as gate insulator. The diameter of InSb nanowires used in the fabricated devices varied from 15-80 nm. Current-voltage measurements were conducted to determine the dependence of NWFETs parameters on the InSb nanowire diameter. Carrier mobility was shown to decrease with decrease of nanowire diameter. Temperature dependen current-voltage measurements were conducted to determine the effect of operating temperature on the InSb NWFET device performance.

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

scholarly journals Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

2021 ◽  
Vol 7 (16) ◽  
pp. eabf7358
Author(s):  
Meng Peng ◽  
Runzhang Xie ◽  
Zhen Wang ◽  
Peng Wang ◽  
Fang Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Room Temperature ◽  
Spectral Response ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Infrared Detection ◽  
Infrared Photodetectors ◽  
Bandgap Semiconductors ◽  
Low Dimensional

Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

High-rate synthesis of graphene by a lower cost chemical vapor deposition route

2017 ◽  
Vol 19 (10) ◽  
Author(s):  
Sebastian Dayou ◽  
Brigitte Vigolo ◽  
Alexandre Desforges ◽  
Jaafar Ghanbaja ◽  
Abdul Rahman Mohamed
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Lower Cost ◽  
Chemical Vapor ◽  
High Rate

The Properties Of a-Si:H/c-Si Heterostructures Prepared By 55 kHz Pecvd For Solar Cell Application

1997 ◽  
Vol 485 ◽  
Author(s):  
B. G Budaguan ◽  
A. A. Aivazov ◽  
A. A. Sherchenkov ◽  
A. V Blrjukov ◽  
V. D. Chernomordic ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Low Frequency ◽  
Reverse Current ◽  
Chemical Vapor ◽  
Interface State ◽  
State Density ◽  
Solar Cell Application ◽  
Current Voltage ◽  
Frequency Plasma ◽  
Device Applications

AbstractIn this work a-Si:H/c-Si heterostructures with good electronic properties of a-Si:H were prepared by 55 kHz Plasma Enhanced Chemical Vapor Deposition (PECVD). Currentvoltage and capacitance-voltage characteristics of a-Si:H/c-Si heterostructures were measuredto investigate the influence of low frequency plasma on the growing film and amorphous silicon/crystalline silicon boundary. It was established that the interface state density is low enough for device applications (<2.1010 cm−2). The current voltage measurements suggest that, when forward biased, space-charge-limited current determines the transport mechanism in a- Si:H/c-Si heterostructures, while reverse current is ascribed to the generation current in a-Si:H and c-Si depletion layers.

Electron Transport in Low Dimensional Solids: A Surface Chemistry Perspective

2018 ◽  
Vol 141 (2) ◽  
pp. 723-732 ◽  
Author(s):  
Yuqiao Guo ◽  
Baohu Dai ◽  
Jing Peng ◽  
Changzheng Wu ◽  
Yi Xie
Keyword(s):  
Electron Transport ◽  
Surface Chemistry ◽  
Low Dimensional
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