Electron Transport in Low Dimensional Solids: A Surface Chemistry Perspective

2018 ◽  
Vol 141 (2) ◽  
pp. 723-732 ◽  
Author(s):  
Yuqiao Guo ◽  
Baohu Dai ◽  
Jing Peng ◽  
Changzheng Wu ◽  
Yi Xie
Keyword(s):  
Electron Transport ◽  
Surface Chemistry ◽  
Low Dimensional

Surface-assisted Ullmann coupling

2017 ◽  
Vol 53 (56) ◽  
pp. 7872-7885 ◽  
Author(s):  
M. Lackinger
Keyword(s):  
Surface Chemistry ◽  
Organic Nanostructures ◽  
Low Dimensional ◽  
Ullmann Coupling

Surface-assisted Ullmann coupling is both drosophila and workhorse of on-surface synthesis. The fabrication of novel covalent low-dimensional organic nanostructures is accompanied by fundamental studies of surface chemistry.

scholarly journals Synthesis of Amorphous InSb Nanowires and a Study of the Effects of Laser Radiation and Thermal Annealing on Nanowire Crystallinity

Nanomaterials ◽  
2018 ◽  
Vol 8 (8) ◽  
pp. 607 ◽  
Author(s):  
Zaina Algarni ◽  
Abhay Singh ◽  
Usha Philipose
Keyword(s):  
Electron Transport ◽  
Chemical Vapor ◽  
Amorphous Semiconductors ◽  
High Rate ◽  
Simple Strategy ◽  
Current Voltage ◽  
Temperature Ramp ◽  
Low Dimensional ◽  
Work Done ◽  
Insb Nanowires

Although various synthesis and characterization strategies have been employed for the synthesis of crystalline nanowires, there is very little work done on development of low-dimensional amorphous semiconductors. This paper presents a simple strategy to grow amorphous InSb (a-InSb) nanowires (NWs) in a chemical vapor deposition (CVD) system. The NWs were grown on Si substrate coated with indium film and the lack of crystallinity in the as-grown stoichiometric NWs was ascertained by Raman spectroscopy and electron transport measurements. A model proposed to explain the amorphous NW growth mechanism takes into account the fact that NW growth was carried out at the high temperature ramp-up rate of 75 ∘C/min. This high rate is believed to affect the growth kinematics and determine the arrangement of atoms in the growing NW. Raman spectrum of the as-grown sample shows a broad peak around 155 cm−1, indicative of the presence of high density of homopolar Sb-Sb bonds in the amorphous matrix. It was also found that high intensity laser light induces localized crystallization of the NW, most likely due to radiation-stimulated diffusion of defects in a-InSb. The nonlinear trend of the current-voltage characteristics for individually contacted a-InSb NWs was analyzed to prove that the non-linearity is not induced by Schottky contacts. At high bias fields, space charge limited conduction was the proposed electron transport mechanism. Post-growth annealing of the as-grown a-InSb NWs was found to be very effective in causing the NWs to undergo a phase transition from amorphous to crystalline.

Low-dimensional electron transport properties in InAs/AlGaSb mesoscopic structures

1997 ◽  
Vol 21 (1) ◽  
pp. 69-76 ◽  
Author(s):  
M. Inoue ◽  
T. Sugihara ◽  
T. Maemoto ◽  
S. Sasa ◽  
H. Dobashi ◽  
...  
Keyword(s):  
Electron Transport ◽  
Transport Properties ◽  
Dimensional Electron ◽  
Electron Transport Properties ◽  
Low Dimensional
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