Extraction of Schottky diode parameters from current-voltage data for a chemical-vapor-deposited diamond/silicon structure over a wide temperature range

A. M. Rodrigues

doi:10.1063/1.2908858

Extraction of Schottky diode parameters from current-voltage data for a chemical-vapor-deposited diamond/silicon structure over a wide temperature range

Journal of Applied Physics ◽

10.1063/1.2908858 ◽

2008 ◽

Vol 103 (8) ◽

pp. 083708 ◽

Cited By ~ 20

Author(s):

A. M. Rodrigues

Keyword(s):

Schottky Diode ◽

Wide Temperature Range ◽

Chemical Vapor ◽

Silicon Structure ◽

Temperature Range ◽

Current Voltage ◽

Chemical Vapor Deposited

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Current–Voltage and Capacitance–Voltage Characteristics of Ni/p-Si (100) Schottky Diode Over a Wide Temperature Range

Physics of Semiconductor Devices - Environmental Science and Engineering ◽

10.1007/978-3-319-03002-9_90 ◽

2014 ◽

pp. 359-362 ◽

Cited By ~ 1

Author(s):

Rajender Kumar ◽

Subhash Chand

Keyword(s):

Schottky Diode ◽

Wide Temperature Range ◽

Temperature Range ◽

Current Voltage ◽

Capacitance Voltage

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The Aromatic Thermosetting Copolyester for Schottky Diode Applications in a Wide Temperature Range

Journal of Electronic Materials ◽

10.1007/s11664-019-07738-x ◽

2019 ◽

Vol 49 (1) ◽

pp. 402-409 ◽

Cited By ~ 2

Author(s):

İkram Orak ◽

Zakir Caldiran ◽

Mete Bakir ◽

Osman S. Cifci ◽

Adem Kocyigit

Keyword(s):

Schottky Diode ◽

Wide Temperature Range ◽

Temperature Range

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Characteristics of a sensitive micro-Hall probe fabricated on chemical vapor deposited graphene over the temperature range from liquid-helium to room temperature

Applied Physics Letters ◽

10.1063/1.3640218 ◽

2011 ◽

Vol 99 (11) ◽

pp. 112107 ◽

Cited By ~ 39

Author(s):

Chiu-Chun Tang ◽

Ming-Yang Li ◽

L. J. Li ◽

C. C. Chi ◽

J. C. Chen

Keyword(s):

Liquid Helium ◽

Room Temperature ◽

Chemical Vapor ◽

Hall Probe ◽

Temperature Range ◽

Chemical Vapor Deposited

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Current‐voltage characteristics ofn‐amorphous low‐pressure chemical vapor deposited silicon films onp‐crystalline silicon

Journal of Applied Physics ◽

10.1063/1.343614 ◽

1989 ◽

Vol 66 (12) ◽

pp. 5894-5900 ◽

Cited By ~ 1

Author(s):

N. Du ◽

S. Salkalachen ◽

J. Yao ◽

H. R. Froelich ◽

P. K. John ◽

...

Keyword(s):

Crystalline Silicon ◽

Chemical Vapor ◽

Low Pressure ◽

Silicon Films ◽

Current Voltage ◽

Chemical Vapor Deposited ◽

Pressure Chemical ◽

Current Voltage Characteristics

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Application of the Hybrid Analytical Model for Approximation of the Current-Voltage Characteristics of MOSFETs in a Wide Temperature Range

Science and Education of the Bauman MSTU ◽

10.7463/0814.0720709 ◽

2014 ◽

Vol 14 (08) ◽

Author(s):

Alexander Pilipenko

Keyword(s):

Analytical Model ◽

Wide Temperature Range ◽

Temperature Range ◽

Current Voltage ◽

Current Voltage Characteristics

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Analysis of anomalous transport mechanism across the interface of Ag/p-Si Schottky diode in wide temperature range

Superlattices and Microstructures ◽

10.1016/j.spmi.2019.02.014 ◽

2019 ◽

Vol 128 ◽

pp. 373-381 ◽

Cited By ~ 9

Author(s):

Arvind Kumar ◽

Ashwani Kumar ◽

K.K. Sharma ◽

Subhash Chand

Keyword(s):

Schottky Diode ◽

Wide Temperature Range ◽

Transport Mechanism ◽

Anomalous Transport ◽

Temperature Range

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Modeling of Schottky diode characteristic by machine learning techniques based on experimental data with wide temperature range

Superlattices and Microstructures ◽

10.1016/j.spmi.2021.107062 ◽

2021 ◽

pp. 107062

Author(s):

Yunis Torun ◽

Hülya Doğan

Keyword(s):

Machine Learning ◽

Experimental Data ◽

Schottky Diode ◽

Wide Temperature Range ◽

Machine Learning Techniques ◽

Temperature Range ◽

Learning Techniques

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Two Gaussian distributions of the barrier height in chemical vapor deposition diamond/silicon junctions over a wide temperature range

Thin Solid Films ◽

10.1016/j.tsf.2010.10.003 ◽

2011 ◽

Vol 519 (6) ◽

pp. 2015-2019 ◽

Cited By ~ 1

Author(s):

A.M. Rodrigues

Keyword(s):

Chemical Vapor Deposition ◽

Barrier Height ◽

Wide Temperature Range ◽

Vapor Deposition ◽

Chemical Vapor ◽

Chemical Vapor Deposition Diamond ◽

Gaussian Distributions ◽

Temperature Range

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Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range

Current Applied Physics ◽

10.1016/j.cap.2009.09.011 ◽

2010 ◽

Vol 10 (3) ◽

pp. 761-765 ◽

Cited By ~ 47

Author(s):

Ö. Vural ◽

Y. Şafak ◽

Ş. Altındal ◽

A. Türüt

Keyword(s):

Wide Temperature Range ◽

Temperature Range ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Rhodamine 101

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Low-frequency noise and current–voltage characteristics of Schottky barrier contacts in a wide temperature range

Journal of Applied Physics ◽

10.1063/1.1502918 ◽

2002 ◽

Vol 92 (8) ◽

pp. 4502-4512 ◽

Cited By ~ 11

Author(s):

V. G. Bozhkov ◽

D. Ju. Kuzyakov

Keyword(s):

Schottky Barrier ◽

Wide Temperature Range ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Temperature Range ◽

Current Voltage ◽

Current Voltage Characteristics

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