scholarly journals Enhanced Electroluminescence from Silicon Quantum Dots Embedded in Silicon Nitride Thin Films Coupled with Gold Nanoparticles in Light Emitting Devices

Nanomaterials ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 182 ◽  
Author(s):  
Ana Muñoz-Rosas ◽  
Arturo Rodríguez-Gómez ◽  
Juan Alonso-Huitrón
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Gold Nanoparticles ◽  
Silicon Nitride ◽  
Silicon Quantum Dots ◽  
Light Emitting ◽  
Light Emitting Devices

Preparation and Spectrial Studies of Silicon Nitride Thin Films Containing Amorphous Silicon Quantum Dots

2021 ◽  
Vol 323 ◽  
pp. 48-55
Author(s):  
Jia Xin Sun ◽  
Bing Qing Zhou ◽  
Xin Gu
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Silicon Quantum Dots ◽  
Plasma Chemical Vapor Deposition

Silicon-rich silicon nitride thin films are prepared on P-type monocrystalline silicon wafer (100) and glass substrate by plasma chemical vapor deposition with reaction gas sources SiH4 and NH3. The deposited samples are thermally annealed from 600°C to 1000°C in an atmosphere furnace filled with high purity nitrogen. The annealing time is 60 minutes. Fourier transform infrared spectroscopy (FTIR) is carried out to investigate the bonding configurations in the films. The results show that the Si-H bond and N-H bond decrease with the increase of annealing temperature, and completely disappear at the annealing temperature of 900°C. But the Si-N bond is enhanced with the increase of annealing temperature, and the blue shift occurs, then Si content in the film increases. The Raman Spectra show that the amorphous Si Raman peak appears at 480 cm-1 in the film at 700°C. The Raman spectra of the films annealed at 1000 °C is fitted with two peaks, and a peak at 497 cm -1 is found, which indicated that the Si phase in the films changed from amorphous to crystalline with the increase of annealing temperature. The experiment also analyses the luminescence properties of the samples through PL spectrum, and it is found that there are five luminescence peaks in each sample under different annealing temperature. Based on the analysis of Raman spectrum and FTIR spectrum, the PL peak of amorphous silicon quantum dots appears at the wavelength range of 525-555nm, and the other four PL peaks are all from the defect state luminescence in the thin films, and the amorphous silicon quantum dot size is calculated according to the formula.

Role of the substrate on the growth of silicon quantum dots embedded in silicon nitride thin films

2018 ◽  
Vol 208 ◽  
pp. 61-67 ◽  
Author(s):  
A. Rodríguez-Gómez ◽  
M. Moreno-Rios ◽  
R. García-García ◽  
A.L. Pérez-Martínez ◽  
J. Reyes-Gasga
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Silicon Quantum Dots

Combined study of the effect of deposition temperature and post-deposition annealing on the photoluminescence of silicon quantum dots embedded in chlorinated silicon nitride thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (81) ◽  
pp. 77440-77451 ◽  
Author(s):  
M. A. Serrano-Núñez ◽  
A. Rodríguez-Gómez ◽  
L. Escobar-Alarcón ◽  
J. C. Alonso-Huitrón
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Deposition Temperature ◽  
Post Deposition Annealing ◽  
Silicon Quantum Dots ◽  
Film Composition ◽  
Annealing Temperatures ◽  
Post Deposition

The photoluminescence (PL) evolution of SiQDs respect deposition and annealing temperatures is studied in a combined manner. The PL identified changes are associated to changes in thin film composition. 150 °C is identified as an important threshold.

scholarly journals Thermomechanically Controlled Fluorescence Anisotropy in Thin Films of InP/ZnS Quantum Dots

2021 ◽  
Author(s):  
Sylwia Parzyszek ◽  
Damian Pociecha ◽  
Joanna Maria Wolska ◽  
Wiktor Lewandowski
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Fluorescence Anisotropy ◽  
Polarized Light ◽  
Macroscopic Scale ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Macro Scale

Macroscopic scale sources of polarized light play a fundamental role in designing light-emitting devices. In this communication we report the formation of nano- and macro-scale ordered, layered assemblies of InP/ZnS...

Physics and Device Structures of Highly Efficient Silicon Quantum Dots Based Silicon Nitride Light-Emitting Diodes

2006 ◽  
Vol 12 (6) ◽  
pp. 1545-1555 ◽  
Author(s):  
Gun Yong Sung ◽  
Nae-Man Park ◽  
Jae-Heon Shin ◽  
Kyung-Hyun Kim ◽  
Tae-Youb Kim ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Silicon Nitride ◽  
Light Emitting Diodes ◽  
Silicon Quantum Dots ◽  
Light Emitting ◽  
Highly Efficient ◽  
Device Structures

Effect of argon flow on promoting boron doping forin-situgrown silicon nitride thin films containing silicon quantum dots

2017 ◽  
Vol 28 (28) ◽  
pp. 285202
Author(s):  
Jia Liu ◽  
Bin Liu ◽  
Xisheng Zhang ◽  
Xiaojia Guo ◽  
Shengzhong (Frank) Liu
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Boron Doping ◽  
Silicon Quantum Dots ◽  
Argon Flow

SILICON NITRIDE THIN FILMS PACKAGING FOR FLEXIBLE ORGANIC LIGHT EMITTING DEVICES

2002 ◽  
Vol 16 (06n07) ◽  
pp. 1052-1056 ◽  
Author(s):  
TAO FENG ◽  
XI WANG ◽  
FU MIN ZHANG ◽  
SHI CHANG ZOU ◽  
WEI DONG HUANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Nitride ◽  
Chemical Vapor ◽  
Flat Panel Displays ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Vapor Permeation ◽  
Organic Light ◽  
Organic Light Emitting Devices

We present a simple thin film encapsulation technique for organic light emitting devices (OLEDS), for use in flexible flat panel displays (FPDs). We systematically studied the moisture-resistant properties of silicon nitride thin films prepared by plasma-enhanced chemical vapor deposition (PECVD) and found that silicon nitride thin films have a low water vapor permeation (WVP) rate even deposited at low substrate temperature (20°C). Then OLEDs prototypes were successfully packaged by depositing silicon nitride thin films on them. Based on the analysis of the degradation of the OLEDs, we found the lifetime of the encapsulated devices was increased by more than two orders of magnitude over that of the unencapsulated ones. Our results demonstrated the feasibility of thin film packaging for OLEDs and the possibility to realize the flexible FPDs.

Photoluminescence enhancement from silicon quantum dots located in the vicinity of a monolayer of gold nanoparticles

RSC Advances ◽  
2015 ◽  
Vol 5 (113) ◽  
pp. 92923-92931 ◽  
Author(s):  
A. L. Muñoz-Rosas ◽  
A. Rodríguez-Gómez ◽  
J. A. Arenas-Alatorre ◽  
J. C. Alonso-Huitrón
Keyword(s):  
Quantum Dots ◽  
Gold Nanoparticles ◽  
Separation Distance ◽  
Silicon Quantum Dots ◽  
Light Emitting ◽  
System P ◽  
Spherical Gold Nanoparticles ◽  
Photoluminescence Enhancement ◽  
Optimum Separation

There is an optimum separation distance between light-emitting silicon quantum dots and a monolayer of nearly spherical gold nanoparticles to achieve a photoluminescence enhancement from the system.

Organic-inorganic hybrid thin film light-emitting devices: interfacial engineering and device physics

2021 ◽  
Author(s):  
Chunxiu Zang ◽  
Mengxin Xu ◽  
Letian Zhang ◽  
Shihao Liu ◽  
Wenfa Xie
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Sandwich Structure ◽  
Device Physics ◽  
Hybrid Thin Film ◽  
Inorganic Hybrid ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Interfacial Engineering ◽  
Organic Light

Thin film light-emitting devices (LEDs) with sandwich structure, such as organic light emitting devices (OLEDs), quantum dots LEDs (QLEDs) and perovskite LEDs (PeLEDs), have attracted wide attentions because of their...

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