Photoluminescence enhancement from silicon quantum dots located in the vicinity of a monolayer of gold nanoparticles

RSC Advances ◽  
2015 ◽  
Vol 5 (113) ◽  
pp. 92923-92931 ◽  
Author(s):  
A. L. Muñoz-Rosas ◽  
A. Rodríguez-Gómez ◽  
J. A. Arenas-Alatorre ◽  
J. C. Alonso-Huitrón
Keyword(s):  
Quantum Dots ◽  
Gold Nanoparticles ◽  
Separation Distance ◽  
Silicon Quantum Dots ◽  
Light Emitting ◽  
System P ◽  
Spherical Gold Nanoparticles ◽  
Photoluminescence Enhancement ◽  
Optimum Separation

There is an optimum separation distance between light-emitting silicon quantum dots and a monolayer of nearly spherical gold nanoparticles to achieve a photoluminescence enhancement from the system.

scholarly journals Light emitting transistors using silicon quantum dots in an organic matrix

2008 ◽  
Author(s):  
Gagan Aggarwal ◽  
Xiaodong Pi ◽  
Ryan P. Lu ◽  
Ayax D. Ramirez ◽  
Uwe Kortshagen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Organic Matrix ◽  
Silicon Quantum Dots ◽  
Light Emitting ◽  
Light Emitting Transistors

Light-emitting diodes based on colloidal silicon quantum dots

2018 ◽  
Vol 39 (6) ◽  
pp. 061008 ◽  
Author(s):  
Shuangyi Zhao ◽  
Xiangkai Liu ◽  
Xiaodong Pi ◽  
Deren Yang
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Silicon Quantum Dots ◽  
Light Emitting

Efficient silicon quantum dots light emitting diodes with an inverted device structure

2016 ◽  
Vol 4 (4) ◽  
pp. 673-677 ◽  
Author(s):  
Li Yao ◽  
Ting Yu ◽  
Lixiang Ba ◽  
Hu Meng ◽  
Xin Fang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Average Diameter ◽  
Device Structure ◽  
Silicon Quantum Dots ◽  
Inverted Structure ◽  
Light Emitting ◽  
Structure Light ◽  
Inverted Device

SiQDs with an average diameter of 2.6 ± 0.5 nm are used as the light emitting material in high-efficiency inverted structure light emitting diodes.

Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DG11 ◽  
Author(s):  
Tae-Youb Kim ◽  
Nae-Man Park ◽  
Cheol-Jong Choi ◽  
Chul Huh ◽  
Chang-Geun Ahn ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electrical Characteristic ◽  
Light Emitting Diodes ◽  
Barrier Width ◽  
Tunneling Barrier ◽  
Silicon Quantum Dots ◽  
Light Emitting
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