Combined study of the effect of deposition temperature and post-deposition annealing on the photoluminescence of silicon quantum dots embedded in chlorinated silicon nitride thin films

RSC Advances ◽  
2016 ◽  
Vol 6 (81) ◽  
pp. 77440-77451 ◽  
Author(s):  
M. A. Serrano-Núñez ◽  
A. Rodríguez-Gómez ◽  
L. Escobar-Alarcón ◽  
J. C. Alonso-Huitrón
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Deposition Temperature ◽  
Post Deposition Annealing ◽  
Silicon Quantum Dots ◽  
Film Composition ◽  
Annealing Temperatures ◽  
Post Deposition

The photoluminescence (PL) evolution of SiQDs respect deposition and annealing temperatures is studied in a combined manner. The PL identified changes are associated to changes in thin film composition. 150 °C is identified as an important threshold.

scholarly journals Properties of Thin Film-Covered GaN(0001) Surfaces

2020 ◽  
Vol 2 (1) ◽  
pp. 30
Author(s):  
Miłosz Grodzicki
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Properties ◽  
Vapour Deposition ◽  
Metal Films ◽  
Physical Vapour Deposition ◽  
Surface Alloying ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Post Deposition

In this paper, the surface properties of bare and film-covered gallium nitride (GaN) of the wurtzite form, (0001) oriented are summarized. Thin films of several elements—manganese, nickel, arsenic and antimony—are formed by the physical vapour deposition method. The results of the bare surfaces as well as the thin film/GaN(0001) phase boundaries presented are characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information about electronic properties of GaN(0001) surfaces are shown. Different behaviours of thin films after post-deposition annealing in ultrahigh vacuum conditions, such as surface alloying, subsurface dissolving and desorbing, are found. The metal films form surface alloys with gallium (NiGa, MnGa), while the semi-metal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate can react with it modifying the surface properties of GaN(0001).

Preparation and Spectrial Studies of Silicon Nitride Thin Films Containing Amorphous Silicon Quantum Dots

2021 ◽  
Vol 323 ◽  
pp. 48-55
Author(s):  
Jia Xin Sun ◽  
Bing Qing Zhou ◽  
Xin Gu
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Raman Spectra ◽  
Annealing Temperature ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Silicon Quantum Dots ◽  
Plasma Chemical Vapor Deposition

Silicon-rich silicon nitride thin films are prepared on P-type monocrystalline silicon wafer (100) and glass substrate by plasma chemical vapor deposition with reaction gas sources SiH4 and NH3. The deposited samples are thermally annealed from 600°C to 1000°C in an atmosphere furnace filled with high purity nitrogen. The annealing time is 60 minutes. Fourier transform infrared spectroscopy (FTIR) is carried out to investigate the bonding configurations in the films. The results show that the Si-H bond and N-H bond decrease with the increase of annealing temperature, and completely disappear at the annealing temperature of 900°C. But the Si-N bond is enhanced with the increase of annealing temperature, and the blue shift occurs, then Si content in the film increases. The Raman Spectra show that the amorphous Si Raman peak appears at 480 cm-1 in the film at 700°C. The Raman spectra of the films annealed at 1000 °C is fitted with two peaks, and a peak at 497 cm -1 is found, which indicated that the Si phase in the films changed from amorphous to crystalline with the increase of annealing temperature. The experiment also analyses the luminescence properties of the samples through PL spectrum, and it is found that there are five luminescence peaks in each sample under different annealing temperature. Based on the analysis of Raman spectrum and FTIR spectrum, the PL peak of amorphous silicon quantum dots appears at the wavelength range of 525-555nm, and the other four PL peaks are all from the defect state luminescence in the thin films, and the amorphous silicon quantum dot size is calculated according to the formula.

Role of the substrate on the growth of silicon quantum dots embedded in silicon nitride thin films

2018 ◽  
Vol 208 ◽  
pp. 61-67 ◽  
Author(s):  
A. Rodríguez-Gómez ◽  
M. Moreno-Rios ◽  
R. García-García ◽  
A.L. Pérez-Martínez ◽  
J. Reyes-Gasga
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Silicon Quantum Dots

Manganese oxide films with controlled oxidation state for water splitting devices through a combination of atomic layer deposition and post-deposition annealing

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98337-98343 ◽  
Author(s):  
Felix Mattelaer ◽  
Tom Bosserez ◽  
Jan Rongé ◽  
Johan A. Martens ◽  
Jolien Dendooven ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Atomic Layer Deposition ◽  
Manganese Oxide ◽  
Atomic Layer ◽  
Post Deposition Annealing ◽  
Solar Hydrogen ◽  
Layer Deposition ◽  
Thin Film Catalysts ◽  
Post Deposition

Manganese oxide thin films were obtained by a combination of atomic layer deposition and post-deposition annealing, and the viability of these thin films as thin film catalysts for solar hydrogen devices has been demonstrated.

Effect of argon flow on promoting boron doping forin-situgrown silicon nitride thin films containing silicon quantum dots

2017 ◽  
Vol 28 (28) ◽  
pp. 285202
Author(s):  
Jia Liu ◽  
Bin Liu ◽  
Xisheng Zhang ◽  
Xiaojia Guo ◽  
Shengzhong (Frank) Liu
Keyword(s):  
Thin Films ◽  
Quantum Dots ◽  
Silicon Nitride ◽  
Boron Doping ◽  
Silicon Quantum Dots ◽  
Argon Flow

scholarly journals Control of Structural and Magnetic Properties of Polycrystalline Co2FeGe Films via Deposition and Annealing Temperatures

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1229
Author(s):  
Andrii Vovk ◽  
Sergey A. Bunyaev ◽  
Pavel Štrichovanec ◽  
Nikolay R. Vovk ◽  
Bogdan Postolnyi ◽  
...  
Keyword(s):  
Magnetic Properties ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Post Deposition Annealing ◽  
Structure Variation ◽  
Annealing Temperatures ◽  
Damping Parameter ◽  
Soft Ferromagnetic ◽  
Thin Polycrystalline ◽  
Post Deposition

Thin polycrystalline Co2FeGe films with composition close to stoichiometry have been fabricated using magnetron co-sputtering technique. Effects of substrate temperature (TS) and post-deposition annealing (Ta) on structure, static and dynamic magnetic properties were systematically studied. It is shown that elevated TS (Ta) promote formation of ordered L21 crystal structure. Variation of TS (Ta) allow modification of magnetic properties in a broad range. Saturation magnetization ~920 emu/cm3 and low magnetization damping parameter α ~ 0.004 were achieved for TS = 573 K. This in combination with soft ferromagnetic properties (coercivity below 6 Oe) makes the films attractive candidates for spin-transfer torque and magnonic devices.

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