scholarly journals Analysis of Orthogonal Coupling Structure Based on Double Three-Contact Vertical Hall Device

Micromachines ◽  
2019 ◽  
Vol 10 (9) ◽  
pp. 610
Author(s):  
Rongshan Wei ◽  
Yuxuan Du
Keyword(s):  
Current Method ◽  
Simulation Software ◽  
Voltage Sensitivity ◽  
Offset Voltage ◽  
Coupling Structure ◽  
Mapping Analysis ◽  
Tcad Simulation ◽  
Low Sensitivity ◽  
Hall Sensors ◽  
Low Offset

A vertical Hall device is an important component of 3D Hall sensors, used for detecting magnetic fields parallel to the sensor surface. The Hall devices described in existing research still have problems, such as large offset voltage and low sensitivity. Aiming to solve these problems, this study proposes a double three-contact vertical Hall device with low offset voltage, and a conformal mapping analysis method to improve the sensitivity of the device. Secondly, an orthogonal coupling structure composed of two sets of double three-contact vertical Hall devices is proposed, which further reduces the offset voltage of the device. Finally, the TCAD simulation software was used to analyze the performance of the devices, and an existing vertical Hall device was compared to ours. The results show that the orthogonal coupling structure in this study exhibits better performance, reaching an average voltage sensitivity of 17.5222 mV/VT and an average offset voltage of about 0.075 mV. In addition, the structure has the same magnitude of offset voltage in the four phases of the rotating current method. This characteristic enables the back-end circuit to more accurately filter out the offset voltage and acquire the Hall signal.

scholarly journals Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations

Sensors ◽  
2020 ◽  
Vol 20 (10) ◽  
pp. 2751 ◽  
Author(s):  
Linjie Fan ◽  
Jinshun Bi ◽  
Kai Xi ◽  
Sandip Majumdar ◽  
Bo Li
Keyword(s):  
Performance Optimization ◽  
Computer Aided Design ◽  
Transport Model ◽  
Optimal Structure ◽  
Physical Parameters ◽  
Voltage Sensitivity ◽  
Offset Voltage ◽  
Trade Offs ◽  
Hall Sensors ◽  
Tcad Simulations

This work investigates the behavior of fully depleted silicon-on-insulator (FD-SOI) Hall sensors with an emphasis on their physical parameters, namely the aspect ratio, doping concentration, and thicknesses. Via 3D-technology computer aided design (TCAD) simulations with a galvanomagnetic transport model, the performances of the Hall voltage, sensitivity, efficiency, offset voltage, and temperature characteristics are evaluated. The optimal structure of the sensor in the simulation has a sensitivity of 86.5 mV/T and an efficiency of 218.9 V/WT at the bias voltage of 5 V. In addition, the effects of bias, such as the gate voltage and substrate voltage, on performance are also simulated and analyzed. Optimal structure and bias design rules are proposed, as are some adjustable trade-offs that can be chosen by designers to meet their own Hall sensor requirements.

scholarly journals Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

Sensors ◽  
2020 ◽  
Vol 20 (14) ◽  
pp. 3946
Author(s):  
Linjie Fan ◽  
Jinshun Bi ◽  
Kai Xi ◽  
Gangping Yan
Keyword(s):  
Computer Aided Design ◽  
Radiation Effects ◽  
Heavy Ion ◽  
Silicon On Insulator ◽  
Voltage Sensitivity ◽  
Hall Voltage ◽  
Fully Depleted ◽  
Offset Voltage ◽  
Hall Sensors ◽  
Tcad Simulations

This work investigates the responses of the fully-depleted silicon-on-insulator (FD-SOI) Hall sensors to the three main types of irradiation ionization effects, including the total ionizing dose (TID), transient dose rate (TDR), and single event transient (SET) effects. Via 3D technology computer aided design (TCAD) simulations with insulator fixed charge, radiation, heavy ion, and galvanomagnetic transport models, the performances of the transient current, Hall voltage, sensitivity, efficiency, and offset voltage have been evaluated. For the TID effect, the Hall voltage and sensitivity of the sensor increase after irradiation, while the efficiency and offset voltage decrease. As for TDR and SET effects, when the energy deposited on the sensor during a nuclear explosion or heavy ion injection is small, the transient Hall voltage of the off-state sensor first decreases and then returns to the initial value. However, if the energy deposition is large, the transient Hall voltage first decreases, then increases to a peak value and decreases to a fixed value. The physical mechanisms that produce different trends in the transient Hall voltage have been analyzed in detail.

scholarly journals A Novel Overcurrent Suppression Strategy during Reclosing Process of MMC-HVDC

2019 ◽  
Vol 9 (9) ◽  
pp. 1737 ◽  
Author(s):  
Bin Jiang ◽  
Yanfeng Gong
Keyword(s):  
Transmission Lines ◽  
Short Circuit ◽  
Current Method ◽  
Short Circuit Current ◽  
Simulation Software ◽  
Fault Current ◽  
Overhead Lines ◽  
Hvdc System ◽  
Electromagnetic Transient Simulation ◽  
Current Calculation

A modular multilevel converter based high-voltage DC (MMC-HVDC) system has been the most promising topology for HVDC. A reclosing scheme is usually configured because temporary faults often occur on transmission lines especially when overhead lines are used, which often brings about an overcurrent problem. In this paper, a new fault current limiter (FCL) based on reclosing current limiting resistance (RCLR) is proposed to solve the overcurrent problem during the reclosing process. Firstly, a mesh current method (MCM) based short-circuit current calculation method is newly proposed to solve the fault current calculation of a loop MMC-HVDC grid. Then the method to calculate the RCLR is proposed based on the arm current to limit the arm currents to a specified value during the reclosing process. Finally, a three-terminal loop MMC-HVDC test grid is constructed in the widely used electromagnetic transient simulation software PSCAD/EMTDC and the simulations prove the effectiveness of the proposed strategy.

From Three-Contact Vertical Hall Elements to Symmetrized Vertical Hall Sensors with Low Offset

2016 ◽  
Vol 240 ◽  
pp. 92-102 ◽  
Author(s):  
Christian Sander ◽  
Maria-Cristina Vecchi ◽  
Martin Cornils ◽  
O. Paul
Keyword(s):  
Hall Sensors ◽  
Low Offset ◽  
Hall Elements

Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors

1998 ◽  
Vol 73 (10) ◽  
pp. 1397-1399 ◽  
Author(s):  
Wen-Chau Liu ◽  
Shiou-Ying Cheng ◽  
Wen-Lung Chang ◽  
Hsi-Jen Pan ◽  
Yung-Hsin Shie
Keyword(s):  
Offset Voltage ◽  
Wide Gap ◽  
Low Offset

scholarly journals High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management

2003 ◽  
Vol 50 (10) ◽  
pp. 2154-2158 ◽  
Author(s):  
Bei-Ping Yan ◽  
E.S. Yang ◽  
Yue-Fei Yang ◽  
Xiao-Qin Wang ◽  
Chung-Chi Hsu
Keyword(s):  
Thermal Management ◽  
High Efficiency ◽  
Bipolar Transistors ◽  
Offset Voltage ◽  
Low Offset

Influence of mechanical stress on the offset voltage of Hall devices operated with spinning current method

1999 ◽  
Vol 8 (4) ◽  
pp. 466-472 ◽  
Author(s):  
R. Steiner ◽  
C. Maier ◽  
M. Mayer ◽  
S. Bellekom ◽  
H. Baltes
Keyword(s):  
Mechanical Stress ◽  
Current Method ◽  
Offset Voltage

A Novel Fast Recovery Diode with Lower Emitter Efficiency

2013 ◽  
Vol 433-435 ◽  
pp. 2222-2226
Author(s):  
Yue Yang Liu ◽  
Hai Long Bao ◽  
Wen Yu Gao ◽  
Jun Liu ◽  
Yao Hua Wang ◽  
...  
Keyword(s):  
Active Region ◽  
Carrier Lifetime ◽  
Simulation Software ◽  
Fast Recovery ◽  
Injection Efficiency ◽  
Power Switch ◽  
Tcad Simulation

In this paper, a new structure of Fast Recovery Diode (FRD) and its manufacture methods were investigated. The active region designed by TCAD simulation software could achieve low emitter injection efficiency, and then reduce the peak reverse recovery current, improve the reverse recovery softness and increase working stability. Meanwhile, the effect of the P-body dose and carrier lifetime on the turn-off characteristic of FRD was also discussed. Taking an example of 3300V voltage grade devices for FRD, the reasonable P-body dose and carrier lifetime on the basis of the new structure were confirmed by simulations. This diode was suitable for the anti-parallel with power switch device (such as IGBT, GTO, etc.).

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