scholarly journals High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management

2003 ◽  
Vol 50 (10) ◽  
pp. 2154-2158 ◽  
Author(s):  
Bei-Ping Yan ◽  
E.S. Yang ◽  
Yue-Fei Yang ◽  
Xiao-Qin Wang ◽  
Chung-Chi Hsu
Keyword(s):  
Thermal Management ◽  
High Efficiency ◽  
Bipolar Transistors ◽  
Offset Voltage ◽  
Low Offset

High current gain, low offset voltage heterostructure emitter bipolar transistors

1994 ◽  
Vol 15 (9) ◽  
pp. 336-338 ◽  
Author(s):  
H.R. Chen ◽  
C.Y. Chang ◽  
C.P. Lee ◽  
C.H. Huang ◽  
J.S. Tsang ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
High Current ◽  
Offset Voltage ◽  
Low Offset

scholarly journals MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors

2002 ◽  
Vol 25 (3) ◽  
pp. 239-243
Author(s):  
K. F. Yarn
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Gain ◽  
Bipolar Transistors ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Offset Voltage ◽  
Delta Doping ◽  
Spacer Layer ◽  
Potential Spike ◽  
Low Offset

The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter current gain of 235, an offset voltage as small as 50mV and an Ic ideal factor of 1.01 are obtained, respectively. The use of delta doping sheet at BE junction results in a high gain and low offset voltage HBT. The improvement of current gain and offset voltage may be attributed to the reduction of BE potential spike by introducing a delta doping layer even without the BE junction passivation.

Characterization of Light Weight Heat Sink Materials for Thermal Management of Electronics

2007 ◽  
Author(s):  
Tunc Icoz ◽  
Mehmet Arik ◽  
John T. Dardis
Keyword(s):  
Thermal Management ◽  
Heat Sink ◽  
High Efficiency ◽  
Computational Study ◽  
Heat Sinks ◽  
Advanced Materials ◽  
Air Cooling ◽  
Thermal Management Of Electronics ◽  
Thermal Solution

Thermal management of electronics is a critical part of maintaining high efficiency and reliability. Adequate cooling must be balanced with weight and volumetric requirements, especially for passive air-cooling solutions in electronics applications where space and weight are at a premium. It should be noted that there are systems where thermal solution takes more than 95% of the total weight of the system. Therefore, it is necessary to investigate and utilize advanced materials to design low weight and compact systems. Many of the advanced materials have anisotropic thermal properties and their performances depend strongly on taking advantage of superior properties in the desired directions. Therefore, control of thermal conductivity plays an important role in utilization of such materials for cooling applications. Because of the complexity introduced by anisotropic properties, thermal performances of advanced materials are yet to be fully understood. Present study is an experimental and computational study on characterization of thermal performances of advanced materials for heat sink applications. Numerical simulations and experiments are performed to characterize thermal performances of four different materials. An estimated weight savings in excess of 75% with lightweight materials are observed compared to the traditionally used heat sinks.

Construction of 3D interconnected diamond networks in Al-matrix composite for high-efficiency thermal management

2020 ◽  
Vol 380 ◽  
pp. 122551 ◽  
Author(s):  
Long Zhang ◽  
Qiuping Wei ◽  
Junjie An ◽  
Li Ma ◽  
Kechao Zhou ◽  
...  
Keyword(s):  
Thermal Management ◽  
Matrix Composite ◽  
High Efficiency ◽  
Al Matrix Composite ◽  
Al Matrix

Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors

1998 ◽  
Vol 73 (10) ◽  
pp. 1397-1399 ◽  
Author(s):  
Wen-Chau Liu ◽  
Shiou-Ying Cheng ◽  
Wen-Lung Chang ◽  
Hsi-Jen Pan ◽  
Yung-Hsin Shie
Keyword(s):  
Offset Voltage ◽  
Wide Gap ◽  
Low Offset
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