Application of δ-doped wide-gap collector structure for high-breakdown and low-offset voltage transistors

1998 ◽  
Vol 73 (10) ◽  
pp. 1397-1399 ◽  
Author(s):  
Wen-Chau Liu ◽  
Shiou-Ying Cheng ◽  
Wen-Lung Chang ◽  
Hsi-Jen Pan ◽  
Yung-Hsin Shie
Keyword(s):  
Offset Voltage ◽  
Wide Gap ◽  
Low Offset

scholarly journals High efficiency, low offset voltage InGaP/GaAs power heterostructure-emitter bipolar transistors with advanced thermal management

2003 ◽  
Vol 50 (10) ◽  
pp. 2154-2158 ◽  
Author(s):  
Bei-Ping Yan ◽  
E.S. Yang ◽  
Yue-Fei Yang ◽  
Xiao-Qin Wang ◽  
Chung-Chi Hsu
Keyword(s):  
Thermal Management ◽  
High Efficiency ◽  
Bipolar Transistors ◽  
Offset Voltage ◽  
Low Offset

Ultralow Noise Low Offset Chopper Amplifier for Induction Coil Sensor to Detect Geomagnetic Field of 1 mHz to 1 kHz

2020 ◽  
Vol 25 (4) ◽  
pp. 497-511
Author(s):  
Jiawei Li ◽  
Zhenzhu Xi ◽  
Xingpeng Chen ◽  
He Wang ◽  
Xia Long ◽  
...  
Keyword(s):  
Geomagnetic Field ◽  
Low Frequency ◽  
Input Voltage ◽  
Induction Coil ◽  
Corner Frequency ◽  
Offset Voltage ◽  
Key Factor ◽  
Time Drift ◽  
Chopper Amplifier ◽  
Low Offset

An induction coil sensor (ICS) is important for measuring low-frequency (DC-1kHz) geomagnetic field. The accuracy of the preamplifier is one key factor determining the performance of the sensor. But the preamplifier is susceptible to 1/ f noise, offset voltage and drift. In order to eliminate these influences, a preamplifier circuit with three amplifier stages based on chopper technology has been designed, and its performance has been tested. The results show that: 1) The 1/ f noise corner frequency is 3 mHz, the equivalent input voltage noise (EIVN) level of the circuit is [Formula: see text] and [Formula: see text]; 2) The equivalent input current noise (EICN) level of the circuit is [Formula: see text]; 3) The offset voltage is about 600 nV, and the time drift performance is excellent. In conclusion, the preamplifier circuit has characteristics of ultralow noise, low offset voltage and low time drift. It can effectively amplify low-frequency weak geomagnetic signals from 1 mHz to 1 kHz and provides excellent performance for low-frequency ICS.

High current gain, low offset voltage heterostructure emitter bipolar transistors

1994 ◽  
Vol 15 (9) ◽  
pp. 336-338 ◽  
Author(s):  
H.R. Chen ◽  
C.Y. Chang ◽  
C.P. Lee ◽  
C.H. Huang ◽  
J.S. Tsang ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
High Current ◽  
Offset Voltage ◽  
Low Offset

scholarly journals Dynamic Offset Compensated Operational Amplifiers

2021 ◽  
Author(s):  
Ara Abdulsatar Assim Assim ◽  
Evgenii Balashov
Keyword(s):  
Dynamic Range ◽  
Flicker Noise ◽  
Input Voltage ◽  
High Gain ◽  
Operational Amplifiers ◽  
Analog To Digital ◽  
Offset Cancellation ◽  
Offset Voltage ◽  
Low Offset ◽  
The Given

The given work is devoted to designing and implementing different dynamic offset cancellation techniques for 50 nm technology CMOS operational amplifiers. The goal is to minimize or get rid of the effects of the offset voltage. Offset voltage exists in all differential amplifiers due to the fact that no pair of transistors can be fabricated with the same size, there is always a slight difference in their dimensions (length or width), this gives rise to an undesirable effect called offset, the value of offset voltage for cheap commercial amplifiers are in the range of 1 to 10 mV, de-spite the fact that this isn’t a significant value, due to the high gain of such amplifiers, this voltage is amplified by tens or hundreds of times, this results in clipping of the output signal and this further limits the amplifier’s maximum allowable input voltage within the given dynamic range, hence its of great importance to take this small voltage into consideration, low-offset amplifiers find applications in mixers, analog to digital converters, instrumentation devices, etc. In this thesis, by using two different techniques for removing offset voltage (chopping and auto-zeroing), five low offset operational amplifiers were designed. The implemented methods reduced the flicker noise by more than 457 times (from 9.4 nV/√Hz to 20 pV/√Hz) at 1 Hz. All the simulations were done using Cadence Virtuoso.

High temperature SiC pressure sensors with low offset voltage shift

2014 ◽  
Author(s):  
Robert S. Okojie ◽  
Dorothy Lukco ◽  
Vu Nguyen ◽  
Ender Savrun
Keyword(s):  
High Temperature ◽  
Pressure Sensors ◽  
Voltage Shift ◽  
Offset Voltage ◽  
Low Offset
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