scholarly journals Investigation of Electrical Contacts to p-Grid in SiC Power Devices Based on Charge Storage Effect and Dynamic Degradation

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1723
Author(s):  
Meng Zhang ◽  
Baikui Li ◽  
Mengyuan Hua ◽  
Jin Wei
Keyword(s):  
Ohmic Contact ◽  
Computer Aided Design ◽  
Voltage Drop ◽  
Schottky Contact ◽  
Typical Feature ◽  
Electrical Contacts ◽  
Power Devices ◽  
Forward Voltage Drop ◽  
Dynamic Degradation ◽  
Aided Design

P-grid is a typical feature in power devices to block high off-state voltage. In power devices, the p-grid is routinely coupled to an external electrode with an Ohmic contact, but Schottky contact to the p-grid is also proposed/adopted for certain purposes. This work investigates the role of contact to p-grid in power devices based on the commonly adopted technology computer-aided design (TCAD) device simulations, with the silicon carbide (SiC) junction barrier Schottky (JBS) diode as a case study. The static characteristics of the JBS diode is independent of the nature of the contact to p-grid, including the forward voltage drop (VF) and the breakdown voltage (BV). However, during the switching process, a Schottky contact would cause storage of negative charges in the p-grid, which leads to an increased VF during switching operation. On the contrary, an Ohmic contact provides an effective discharging path for the stored negative charges in the p-grid, which eliminates the dynamic degradation issues. Therefore, the necessity of an Ohmic contact to p-grid in power devices is clarified.

scholarly journals Device Design Assessment of GaN Merged P-i-N Schottky Diodes

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1550 ◽  
Author(s):  
Yuliang Zhang ◽  
Xing Lu ◽  
Xinbo Zou
Keyword(s):  
Breakdown Voltage ◽  
Computer Aided Design ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Background Concentration ◽  
Model Parameters ◽  
Design Assessment ◽  
Blocking Voltage ◽  
Aided Design ◽  
Drift Layer

Device characteristics of GaN merged P-i-N Schottky (MPS) diodes were evaluated and studied via two-dimensional technology computer-aided design (TCAD) after calibrating model parameters and critical electrical fields with experimental proven results. The device’s physical dimensions and drift layer concentration were varied to study their influence on the device’s performance. Extending the inter-p-GaN region distance or the Schottky contact portion could enhance the forward conduction capability; however, this leads to compromised electrical field screening effects from neighboring PN junctions, as well as reduced breakdown voltage. By reducing the drift layer background concentration, a higher breakdown voltage was expected for MPSs, as a larger portion of the drift layer itself could be depleted for sustaining vertical reverse voltage. However, lowering the drift layer concentration would also result in a reduction in forward conduction capability. The method and results of this study provide a guideline for designing MPS diodes with target blocking voltage and forward conduction at a low bias.

Portable instrument for measuring the forward voltage drop of semiconductor power devices

1980 ◽  
Vol 23 (1) ◽  
pp. 89-89
Author(s):  
V. M. Bardin ◽  
V. P. Tsetlin ◽  
A. G. Mikov ◽  
B. I. Petrov
Keyword(s):  
Voltage Drop ◽  
Portable Instrument ◽  
Power Devices ◽  
Forward Voltage ◽  
Forward Voltage Drop

scholarly journals Investigation on Temperature Dependency of Recessed-Channel Reconfigurable Field-Effect Transistor

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1124
Author(s):  
Kim ◽  
Kim
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Schottky Contact ◽  
Drain Current ◽  
Barrier Heights ◽  
In Series ◽  
Effect Transistor ◽  
Recessed Channel ◽  
Aided Design

Current-voltage (I-V) characteristics of a recessed-channel reconfigurable field-effect transistor (RC-RFET) is discussed, herein, depending on the variation of temperature (T) to understand the operation mechanisms, in depth. Assuming that RC-RFET can be simply modeled as a channel resistance (RCH) and a Schottky contact resistance (RSC) connected in series, the validity has been examined by a technology computer-aided design (TCAD) simulation with different Schottky barrier heights (SBHs) and carrier mobilities (μ). As a result, it was clearly determined that the drain current (ID) of RC-RFET is dominated by the bigger component, since RCH and RSC have an opposite correlation with T.

Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode

2008 ◽  
Vol 600-603 ◽  
pp. 643-646 ◽  
Author(s):  
Akimasa Kinoshita ◽  
Takashi Nishi ◽  
Takasumi Ohyanagi ◽  
Tsutomu Yatsuo ◽  
Kenji Fukuda ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Voltage Drop ◽  
Schottky Contact ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Forward Voltage Drop

The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400~700oC) were investigated. The Schottky barrier height (fb) and the crystal structure of the samples annealed at the different temperature were measured by the forward current-voltage (IV) characteristics and the x-ray diffraction (XRD), respectively. XRD measurements were performed in the w-2q scan and the pole figure measurement for Ti (101) diffraction peak. The fb was changed as a function of temperature. It was concluded that the fb variation and non-uniformity of the samples annealed at 400oC, 500oC, 600 oC and 700oC was caused by changing the condition at the interface between SiC substrate and Ti. We fabricated the 600V Ti/SiC silicidation SBD annealed at 500oC for 5min. As a result, a low forward voltage drop, low reverse leakage current and stability at high temperature (200 oC) for the Ti/SiC silicidation SBD were shown.

Design and Analysis of DC/DC Boost Converter Using Vertical GaN Power Device

2021 ◽  
Vol 21 (8) ◽  
pp. 4320-4324
Author(s):  
Min Su Cho ◽  
Hye Jin Mun ◽  
Sang Ho Lee ◽  
Hee Dae An ◽  
Jin Park ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Computer Aided Design ◽  
High Performance ◽  
Input Voltage ◽  
Boost Converter ◽  
Power Devices ◽  
High Breakdown Voltage ◽  
Small Device ◽  
Aided Design ◽  
Voltage Conversion

In this study, a high-performance vertical gallium nitride (GaN) power transistor is designed by using two-dimensional technology computer-aided design simulator. The vertical GaN transistor is used to analyze the DC/DC boost converter. The systems requiring high voltages of 1000 V or more, such as electric vehicles, need wide devices to achieve a high breakdown voltage when using conventional power devices. However, vertical GaN transistors can be fabricated with small device area and high breakdown voltage. The proposed device has an off-current of 4.72×10−10 A/cm2, an on-current of 17,528 A/cm2, and a high breakdown voltage of 1,265 V due to good gate controllability and the very long gate-to-drain length. Using the designed device, a boost converter that doubles the input voltage was constructed and is characteristics were examined. The designed boost converter obtained an output voltage of 1,951 V and the voltage conversion efficiency was considerably high at 97.55% when the input voltage was 1,000 V.

Temperature-Dependent Characteristics of 4H-SiC Buried Grid JBS Diodes

2015 ◽  
Vol 821-823 ◽  
pp. 600-603 ◽  
Author(s):  
Jang Kwon Lim ◽  
S.A. Reshanov ◽  
Wlodek Kaplan ◽  
A. Zhang ◽  
Tomas Hjort ◽  
...  
Keyword(s):  
Leakage Current ◽  
Doping Concentration ◽  
Voltage Drop ◽  
Schottky Contact ◽  
Drift Region ◽  
Forward Voltage ◽  
Forward Voltage Drop ◽  
Increasing Temperature ◽  
P Type ◽  
State Resistance

4H-SiC Schottky Barrier Diodes (SBD) have been developed using p-type buried grids (BGs) formed by Al implantation. In order to reduce on-state resistance and improve forward conduction, the doping concentration of the channel region between the buried grids was increased. The fabricated diodes were encapsulated with TO-254 packages and electrically evaluated. Experimental forward and reverse characteristics were measured in the temperature range from 25 °C to 250 °C. On bare die level, the forward voltage drop was reduced from 5.36 V to 3.90 V at 20 A as the channel doping concentration was increased, which introduced a low channel resistance. By the encapsulation in TO-254 package, the forward voltage drop was decreased approximately 10% due to a lower contact resistance. The on-state resistance of the identical device measured on bare die and in TO-254 package increased with increasing temperature due to the decreased electron mobility in the drift region resulting in higher resistance. The incremental contact resistances of the bare dies were larger than in the packaged devices. One key issue associated with conventional Junction Barrier Schottky (JBS) diodes is a high leakage current at high temperature operation over 200 °C. The developed Buried Grid JBS (BG JBS) diode has significantly reduced leakage current due to a better field shielding at the Schottky contact. The leakage current of the packaged BG JBS diodes is compared to pure SBD and commercial JBS diodes.

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