scholarly journals Investigation on Temperature Dependency of Recessed-Channel Reconfigurable Field-Effect Transistor

Electronics ◽  
2019 ◽  
Vol 8 (10) ◽  
pp. 1124
Author(s):  
Kim ◽  
Kim
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Schottky Contact ◽  
Drain Current ◽  
Barrier Heights ◽  
In Series ◽  
Effect Transistor ◽  
Recessed Channel ◽  
Aided Design

Current-voltage (I-V) characteristics of a recessed-channel reconfigurable field-effect transistor (RC-RFET) is discussed, herein, depending on the variation of temperature (T) to understand the operation mechanisms, in depth. Assuming that RC-RFET can be simply modeled as a channel resistance (RCH) and a Schottky contact resistance (RSC) connected in series, the validity has been examined by a technology computer-aided design (TCAD) simulation with different Schottky barrier heights (SBHs) and carrier mobilities (μ). As a result, it was clearly determined that the drain current (ID) of RC-RFET is dominated by the bigger component, since RCH and RSC have an opposite correlation with T.

scholarly journals Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain

Micromachines ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 30 ◽  
Author(s):  
Jang Hyun Kim ◽  
Hyun Woo Kim ◽  
Garam Kim ◽  
Sangwan Kim ◽  
Byung-Gook Park
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Performance ◽  
Control Group ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Tcad Simulation ◽  
High Level ◽  
Aided Design

In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (ION) and low-level OFF-state current (IOFF); ambipolar current (IAMB). In detail, its ION is enhanced by 24 times more than that of Si control group and by 6 times more than of SiGe control group. The IAMB can be reduced by up to 900 times compared with the SiGe control group. In addition, technology computer-aided design (TCAD) simulation is performed to optimize electrical performance. Then, the benchmarking of ON/OFF current is also discussed with other research group’s results.

scholarly journals Subthreshold Characteristics of a Metal-Oxide–Semiconductor Field-Effect Transistor with External PVDF Gate Capacitance

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 673
Author(s):  
Jing-Jenn Lin ◽  
Ji-Hua Tao ◽  
You-Lin Wu
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Subthreshold Slope ◽  
Ferroelectric Capacitor ◽  
In Series ◽  
Effect Transistor

An organic ferroelectric capacitor, using polyvinylidene difluoride (PVDF) as the dielectric, was fabricated. By connecting the PVDF capacitor in series to the gate of a commercially purchased metal-oxide–semiconductor field-effect transistor (MOSFET), drain current (ID)–drain voltage (VD) characteristics and drain current (ID)–gate voltage (VG) characteristics were measured. In addition, the subthreshold slopes of the MOSFET were determined from the ID–VG curves. It was found that the subthreshold slope could be effectively reduced by 23% of its original value when the PVDF capacitor was added to the gate of the MOSFET.

I-Shaped SiGe Fin Tunnel Field-Effect Transistor with High ION/IOFF Ratio

2020 ◽  
Vol 20 (7) ◽  
pp. 4298-4302
Author(s):  
Ryoongbin Lee ◽  
Junil Lee ◽  
Kitae Lee ◽  
Soyoun Kim ◽  
Sihyun Kim ◽  
...  
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Channel Width ◽  
Condensation Process ◽  
Performance Improvements ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Aided Design ◽  
Effective Channel

In this paper, we propose an I-shaped SiGe fin tunnel field-effect transistor (TFET) and use technology computer aided design (TCAD) simulations to verify the validity. Compared to conventional Fin TFET on the same footprint, a 27% increase in the effective channel width can be obtained with the proposed TFET. The proposed Fin TFET was confirmed to have 300% boosted on-current (I on), 25% reduced subthreshold swing (SS), and 52% lower off-current (I off) than conventional Fin TFET through TCAD simulation results. These performance improvements are attributed to increased effective channel width and enhanced gate controllability of the I-shaped fin structure. Furthermore, the fabrication process of forming an I-shaped SiGe fin is also presented using the SiGe wet etch. By optimizing the Ge condensation process, an I-shaped SiGe fin with a Ge ratio greater than 50% can be obtained.

scholarly journals Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 128
Author(s):  
Zhihua Zhu ◽  
Zhaonian Yang ◽  
Xiaomei Fan ◽  
Yingtao Zhang ◽  
Juin Jei Liou ◽  
...  
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Source Region ◽  
Potential Candidate ◽  
Protection Scheme ◽  
Esd Protection ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Aided Design

The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network. In this paper, the ESD characteristics of a traditional point TFET, a line TFET and a Ge-source TFET are investigated using technology computer-aided design (TCAD) simulations, and an improved TFET-based whole-chip ESD protection scheme is proposed. It is found that the Ge-source TFET has a lower trigger voltage and higher failure current compared to the traditional point and line TFETs. However, the Ge-source TFET-based secondary path in the whole-chip ESD protection network is more vulnerable compared to the primary path due to the low thermal instability. Simulation results show that choosing the proper germanium mole fraction in the source region can balance the discharge ability and thermal failure risk, consequently enhancing the whole-chip ESD robustness.

scholarly journals Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor

Micromachines ◽  
2020 ◽  
Vol 11 (8) ◽  
pp. 780
Author(s):  
Jang Hyun Kim ◽  
Hyun Woo Kim ◽  
Young Suh Song ◽  
Sangwan Kim ◽  
Garam Kim
Keyword(s):  
Work Function ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Tunnel Barrier ◽  
Entire Area ◽  
Current Variation ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Aided Design

In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation. Depending on the gate voltage, the three variations occur in transfer curves. The first one is the on-state current (ION) variation, the second one is the hump current (IHUMP) variation, and the last one is ambipolar current (IAMB) variation. According to the simulation results, the ION variation is sensitive depending on the size of the tunneling region and could be reduced by increasing the tunneling region. However, the IHUMP and IAMB variations are relatively irrelevant to the size of the tunneling region. In order to analyze the cause of this difference, we investigated the band-to-band tunneling (BTBT) rate according to WFV cases. The results show that when ION is formed in L-shaped TFET, the BTBT rate relies on the WFV in the whole region of the gate because the tunnel barrier is formed in the entire area where the source and the gate meet. On the other hand, when the IHUMP and IAMB are formed in L-shaped TFET, the BTBT rate relies on the WFV in the edge of the gate.

scholarly journals Study of Work-Function Variation on Performance of Dual-Metal Gate Fin Field-Effect Transistor

2020 ◽  
Author(s):  
Tianyu Yu ◽  
Liang Dai ◽  
Zhifeng Zhao ◽  
Weifeng Lyu ◽  
Mi Lin
Keyword(s):  
Work Function ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Gate ◽  
Statistical Fluctuations ◽  
Effect Transistor ◽  
Dual Metal ◽  
Aided Design ◽  
The Impact

The impact of work-function variation (WFV) on performance of an inversion-mode (IM) dual-metal gate (DMG) fin field-effect transistor (FinFET) was investigated for the first time. The statistical fluctuations induced by WFV on the threshold-voltage (VTH), transconductance (gm), and subthreshold slope (SS) were demonstrated and estimated utilizing a 3D technology computer-aided design (TCAD) simulator. We found that the performance variations of the DMG FinFET were affected by two different metals near the drain and near the source, respectively. Additionally, this effect of the two metals on the channel was not monotonic with the length of the channel of their own control. Our work fills a gap in the study of WFV for a DMG IM FinFET and provides a reference for optimizing the distribution of the two metals.

Surrounding Channel Nanowire Tunnel Field-Effect Transistor with Dual Gate to Reduce a Hump Phenomenon

2020 ◽  
Vol 20 (7) ◽  
pp. 4182-4187
Author(s):  
Ye Sung Kwon ◽  
Seong-Hyun Lee ◽  
Yoon Kim ◽  
Garam Kim ◽  
Jang Hyun Kim ◽  
...  
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Control Device ◽  
Subthreshold Region ◽  
Dual Gate ◽  
Technical Issues ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Aided Design

The tunnel field-effect transistor (TFET) with surrounding channel nanowire (SCNW) structure promises better performance than the conventional planar TFET in terms of subthreshold swing (SS) and on-current (ION). In spite of the advantages of SCNW TFET, there are some technical issues in the aspects of a hump phenomenon in subthreshold region and a high ambipolar current (IAMB) in off-state. In order to overcome these issues, a novel dual-gate SCNW TFET (DG-SCNW TFET) with differential gate work functions (WFs) and a gate-drain underlap is proposed and studied by using technology computer-aided design (TCAD) simulation. In addition, a hetero-junction with SiGe source is applied to improve the device performance. Finally, it is confirmed that the optimized DG-SCNW TFET shows the remarkable performance comparing with the control device.

scholarly journals F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 760 ◽  
Author(s):  
Seunghyun Yun ◽  
Jeongmin Oh ◽  
Seokjung Kang ◽  
Yoon Kim ◽  
Jang Hyun Kim ◽  
...  
Keyword(s):  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Electrical Characteristics ◽  
Turn On ◽  
Crowding Effects ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Power Application ◽  
Aided Design

In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage (VON) maintaining high on-state current (ION) and low subthreshold swing (SS) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower VON than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher ION and 7 mV/dec smaller average SS with the same VON as that for L-shaped TFET.

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