Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

Ivan Esqueda; Cory Cress; Travis Anderson; Jonathan Ahlbin; Michael Bajura; Michael Fritze; Jeong-S. Moon

doi:10.3390/electronics2030234

Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

Electronics ◽

10.3390/electronics2030234 ◽

2013 ◽

Vol 2 (4) ◽

pp. 234-245 ◽

Cited By ~ 6

Author(s):

Ivan Esqueda ◽

Cory Cress ◽

Travis Anderson ◽

Jonathan Ahlbin ◽

Michael Bajura ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Epitaxial Graphene ◽

Radiation Induced

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Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994543 ◽

2009 ◽

Author(s):

Ivan S. Esqueda ◽

Hugh J. Barnaby ◽

Keith E. Holbert ◽

Farah E. Mamouni ◽

Ronald D. Schrimpf

Keyword(s):

Ionizing Radiation ◽

Field Effect ◽

Field Effect Transistors ◽

Radiation Induced

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Reduction of Radiation-Induced Degradation in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal $\bf N_{2}O$ Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l916 ◽

1994 ◽

Vol 33 (Part 2, No. 7A) ◽

pp. L916-L917 ◽

Cited By ~ 1

Author(s):

You-Lin Wu ◽

Kang-Min Kuo ◽

Jenn-Gwo Hwu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Radiation Induced

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Annealing of Ionizing Radiation Induced Defects in Insulated Gate Field Effect Transistors Using Elevated Pressure

Journal of The Electrochemical Society ◽

10.1149/1.2221583 ◽

1993 ◽

Vol 140 (5) ◽

pp. 1482-1488 ◽

Cited By ~ 1

Author(s):

R. Bright ◽

A. Reisman

Keyword(s):

Ionizing Radiation ◽

Field Effect ◽

Field Effect Transistors ◽

Elevated Pressure ◽

Radiation Induced ◽

Induced Defects

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Epitaxial graphene field-effect transistors on silicon substrates

Solid-State Electronics ◽

10.1016/j.sse.2010.04.018 ◽

2010 ◽

Vol 54 (9) ◽

pp. 1010-1014 ◽

Cited By ~ 11

Author(s):

Hyun-Chul Kang ◽

Hiromi Karasawa ◽

Yu Miyamoto ◽

Hiroyuki Handa ◽

Tetsuya Suemitsu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Epitaxial Graphene ◽

Silicon Substrates

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Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

Applied Physics Letters ◽

10.1063/1.4939591 ◽

2016 ◽

Vol 108 (1) ◽

pp. 013102 ◽

Cited By ~ 17

Author(s):

C. Yu ◽

Z. Z. He ◽

J. Li ◽

X. B. Song ◽

Q. B. Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Epitaxial Graphene ◽

Free Standing

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Epitaxial Graphene Field Effect Transistors on SiC substrate with Polymer Gate Dielectric

10.7567/ssdm.2010.p-13-7 ◽

2010 ◽

Author(s):

M. H. Jung ◽

H. Handa ◽

R. Takahashi ◽

H. Fukidome ◽

M. Suemitsu

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Field Effect Transistors ◽

Epitaxial Graphene

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Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4861379 ◽

2014 ◽

Vol 32 (1) ◽

pp. 012202 ◽

Cited By ~ 4

Author(s):

Wan Sik Hwang ◽

Kristof Tahy ◽

Pei Zhao ◽

Luke O. Nyakiti ◽

Virginia D. Wheeler ◽

...

Keyword(s):

Transport Properties ◽

Electronic Transport ◽

Field Effect ◽

Field Effect Transistors ◽

Epitaxial Graphene ◽

Graphene Nanoribbon ◽

Electronic Transport Properties

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Erratum: “Extraction of Drain Current and Effective Mobility in Epitaxial Graphene Channel Field-Effect Transistors on SiC Layer Grown on Silicon Substrates”

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.079201 ◽

2010 ◽

Vol 49 (7) ◽

pp. 079201

Author(s):

Hyun-Chul Kang ◽

Roman Olac-vaw ◽

Hiromi Karasawa ◽

Yu Miyamoto ◽

Hiroyuki Handa ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Epitaxial Graphene ◽

Silicon Substrates ◽

Effective Mobility

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Low frequency transconductance and output resistance dispersion of epitaxial graphene nanoribbon-based field effect transistors

69th Device Research Conference ◽

10.1109/drc.2011.5994461 ◽

2011 ◽

Author(s):

G. Aroshvili ◽

N. Meng ◽

D. Vignaud ◽

D. Pavlidis ◽

H. Happy

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Low Frequency ◽

Epitaxial Graphene ◽

Graphene Nanoribbon ◽

Output Resistance

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A mechanism for radiation‐induced degradation in GaAs field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.334741 ◽

1985 ◽

Vol 57 (2) ◽

pp. 581-590 ◽

Cited By ~ 11

Author(s):

F. A. Buot ◽

W. T. Anderson ◽

A. Christou ◽

A. B. Campbell ◽

A. R. Knudson

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Radiation Induced

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