A mechanism for radiation‐induced degradation in GaAs field‐effect transistors

F. A. Buot; W. T. Anderson; A. Christou; A. B. Campbell; A. R. Knudson

doi:10.1063/1.334741

A mechanism for radiation‐induced degradation in GaAs field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.334741 ◽

1985 ◽

Vol 57 (2) ◽

pp. 581-590 ◽

Cited By ~ 11

Author(s):

F. A. Buot ◽

W. T. Anderson ◽

A. Christou ◽

A. B. Campbell ◽

A. R. Knudson

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Radiation Induced

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Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994543 ◽

2009 ◽

Author(s):

Ivan S. Esqueda ◽

Hugh J. Barnaby ◽

Keith E. Holbert ◽

Farah E. Mamouni ◽

Ronald D. Schrimpf

Keyword(s):

Ionizing Radiation ◽

Field Effect ◽

Field Effect Transistors ◽

Radiation Induced

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Reduction of Radiation-Induced Degradation in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET's) with Gate Oxides Prepared by Repeated Rapid Thermal $\bf N_{2}O$ Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.l916 ◽

1994 ◽

Vol 33 (Part 2, No. 7A) ◽

pp. L916-L917 ◽

Cited By ~ 1

Author(s):

You-Lin Wu ◽

Kang-Min Kuo ◽

Jenn-Gwo Hwu

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxides ◽

Radiation Induced

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Annealing of Ionizing Radiation Induced Defects in Insulated Gate Field Effect Transistors Using Elevated Pressure

Journal of The Electrochemical Society ◽

10.1149/1.2221583 ◽

1993 ◽

Vol 140 (5) ◽

pp. 1482-1488 ◽

Cited By ~ 1

Author(s):

R. Bright ◽

A. Reisman

Keyword(s):

Ionizing Radiation ◽

Field Effect ◽

Field Effect Transistors ◽

Elevated Pressure ◽

Radiation Induced ◽

Induced Defects

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Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

Electronics ◽

10.3390/electronics2030234 ◽

2013 ◽

Vol 2 (4) ◽

pp. 234-245 ◽

Cited By ~ 6

Author(s):

Ivan Esqueda ◽

Cory Cress ◽

Travis Anderson ◽

Jonathan Ahlbin ◽

Michael Bajura ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Epitaxial Graphene ◽

Radiation Induced

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Transient Radiation-Induced Response of MOS Field Effect Transistors

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1965.4323920 ◽

1965 ◽

Vol 12 (6) ◽

pp. 31-37 ◽

Cited By ~ 4

Author(s):

D. C. Sullivan

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Induced Response ◽

Transient Radiation ◽

Radiation Induced

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Impact of proton-radiation-induced spacer damage on the dc characteristics degradation in deep-submicron metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.3106163 ◽

2009 ◽

Vol 105 (8) ◽

pp. 084505 ◽

Cited By ~ 9

Author(s):

Shoubin Xue ◽

Ru Huang ◽

Pengfei Wang ◽

Wenhua Wang ◽

Dake Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Deep Submicron ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Proton Radiation ◽

Dc Characteristics ◽

Radiation Induced

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Monte Carlo particle simulation of radiation‐induced heating in GaAs field‐effect transistors

Applied Physics Letters ◽

10.1063/1.105963 ◽

1991 ◽

Vol 59 (2) ◽

pp. 192-194 ◽

Cited By ~ 5

Author(s):

C. Moglestue ◽

F. A. Buot ◽

W. T. Anderson

Keyword(s):

Monte Carlo ◽

Field Effect ◽

Field Effect Transistors ◽

Particle Simulation ◽

Radiation Induced ◽

Monte Carlo Particle Simulation

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Graphene-based field effect transistors for radiation-induced field sensing

Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment ◽

10.1016/j.nima.2015.08.066 ◽

2016 ◽

Vol 824 ◽

pp. 392-393 ◽

Cited By ~ 1

Author(s):

Alessandra Di Gaspare ◽

Antonio Valletta ◽

Guglielmo Fortunato ◽

Rosanna Larciprete ◽

Luigi Mariucci ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Induced Field ◽

Radiation Induced ◽

Field Sensing

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Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2010.2101615 ◽

2011 ◽

Vol 58 (2) ◽

pp. 499-505 ◽

Cited By ~ 23

Author(s):

Ivan Sanchez Esqueda ◽

Hugh J. Barnaby ◽

Keith E. Holbert ◽

Farah El-Mamouni ◽

Ronald D. Schrimpf

Keyword(s):

Ionizing Radiation ◽

Field Effect ◽

Field Effect Transistors ◽

Radiation Induced

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APPLICATIONS OF a-Si FIELD EFFECT TRANSISTORS IN LIQUID CRYSTAL DISPLAYS AND IN INTEGRATED LOGIC CIRCUITS

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1981490 ◽

1981 ◽

Vol 42 (C4) ◽

pp. C4-423-C4-432 ◽

Cited By ~ 2

Author(s):

P. G. Le Comber ◽

A. J. Snell ◽

K. D. Mackenzie ◽

W. E. Spear

Keyword(s):

Liquid Crystal ◽

Field Effect ◽

Field Effect Transistors ◽

Liquid Crystal Displays ◽

Logic Circuits ◽

Integrated Logic

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