Quasi-free-standing bilayer epitaxial graphene field-effect transistors on 4H-SiC (0001) substrates

2016 ◽  
Vol 108 (1) ◽  
pp. 013102 ◽  
Author(s):  
C. Yu ◽  
Z. Z. He ◽  
J. Li ◽  
X. B. Song ◽  
Q. B. Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Graphene ◽  
Free Standing

2D Honeycomb Silicon: A Review on Theoretical Advances for Silicene Field-Effect Transistors

2020 ◽  
Vol 16 (4) ◽  
pp. 595-607 ◽  
Author(s):  
Mu Wen Chuan ◽  
Kien Liong Wong ◽  
Afiq Hamzah ◽  
Shahrizal Rusli ◽  
Nurul Ezaila Alias ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Industry ◽  
Honeycomb Lattice ◽  
Theoretical Studies ◽  
Fabrication Technology ◽  
Dirac Cone ◽  
Free Standing ◽  
Silicene Nanoribbons ◽  
Effect Transistor

Catalysed by the success of mechanical exfoliated free-standing graphene, two dimensional (2D) semiconductor materials are successively an active area of research. Silicene is a monolayer of silicon (Si) atoms with a low-buckled honeycomb lattice possessing a Dirac cone and massless fermions in the band structure. Another advantage of silicene is its compatibility with the Silicon wafer fabrication technology. To effectively apply this 2D material in the semiconductor industry, it is important to carry out theoretical studies before proceeding to the next step. In this paper, an overview of silicene and silicene nanoribbons (SiNRs) is described. After that, the theoretical studies to engineer the bandgap of silicene are reviewed. Recent theoretical advancement on the applications of silicene for various field-effect transistor (FET) structures is also discussed. Theoretical studies of silicene have shown promising results for their application as FETs and the efforts to study the performance of bandgap-engineered silicene FET should continue to improve the device performance.

Epitaxial graphene field-effect transistors on silicon substrates

2010 ◽  
Vol 54 (9) ◽  
pp. 1010-1014 ◽  
Author(s):  
Hyun-Chul Kang ◽  
Hiromi Karasawa ◽  
Yu Miyamoto ◽  
Hiroyuki Handa ◽  
Tetsuya Suemitsu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Graphene ◽  
Silicon Substrates

Free-Standing 2D Hexagonal Aluminum Nitride Dielectric Crystals for High-Performance Organic Field-Effect Transistors

2018 ◽  
Vol 30 (34) ◽  
pp. 1801891 ◽  
Author(s):  
Fangxu Yang ◽  
Lei Jin ◽  
Lingjie Sun ◽  
Xiaochen Ren ◽  
Xiaoli Duan ◽  
...  
Keyword(s):  
Aluminum Nitride ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Free Standing

Fabrication of free-standing Al2O3 nanosheets for high mobility flexible graphene field effect transistors

2014 ◽  
Vol 2 (24) ◽  
pp. 4759 ◽  
Author(s):  
Min Wook Jung ◽  
Wooseok Song ◽  
Won Jin Choi ◽  
Dae Sung Jung ◽  
Yoon Jang Chung ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Free Standing

Epitaxial Graphene Field Effect Transistors on SiC substrate with Polymer Gate Dielectric

2010 ◽  
Author(s):  
M. H. Jung ◽  
H. Handa ◽  
R. Takahashi ◽  
H. Fukidome ◽  
M. Suemitsu
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Epitaxial Graphene

scholarly journals Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

Electronics ◽  
2013 ◽  
Vol 2 (4) ◽  
pp. 234-245 ◽  
Author(s):  
Ivan Esqueda ◽  
Cory Cress ◽  
Travis Anderson ◽  
Jonathan Ahlbin ◽  
Michael Bajura ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Graphene ◽  
Radiation Induced
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