Annealing of Ionizing Radiation Induced Defects in Insulated Gate Field Effect Transistors Using Elevated Pressure

1993 ◽  
Vol 140 (5) ◽  
pp. 1482-1488 ◽  
Author(s):  
R. Bright ◽  
A. Reisman
Keyword(s):  
Ionizing Radiation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Elevated Pressure ◽  
Radiation Induced ◽  
Induced Defects

Modeling of Ionizing Radiation-Induced Degradation in Multiple Gate Field Effect Transistors

2011 ◽  
Vol 58 (2) ◽  
pp. 499-505 ◽  
Author(s):  
Ivan Sanchez Esqueda ◽  
Hugh J. Barnaby ◽  
Keith E. Holbert ◽  
Farah El-Mamouni ◽  
Ronald D. Schrimpf
Keyword(s):  
Ionizing Radiation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Radiation Induced

AN ORGANIC FIELD EFFECT TRANSISTORS-BASED SENSING PLATFORM FOR ENVIRONMENTAL/SECURITY APPLICATIONS

2011 ◽  
Vol 10 (04n05) ◽  
pp. 891-898 ◽  
Author(s):  
RAVISHANKAR S. DUDHE ◽  
HARSHIL N. RAVAL ◽  
ANIL KUMAR ◽  
V. RAMGOPAL RAO
Keyword(s):  
Radiation Dose ◽  
Ionizing Radiation ◽  
Organic Semiconductor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Layer ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors ◽  
Γ Radiation ◽  
Semiconducting Material

Organic semiconducting material based sensors have been used for various environmental applications. Organic field effect transistors (OFETs) also find their applications in explosive vapor detection and total ionizing radiation dose determination. OFETs using poly 3-hexylthiophene (P3HT), a p-type organic semiconductor material and CuII tetraphenylporphyrin ( CuTPP ) composite as their active material were investigated as sensors for detection of various nitro-based explosive vapors with greater than parts per billion sensitivity range. Significant changes, suitable for sensor response, were observed in ON current (Ion) and transconductance (gm) extracted from electrical characteristics of the OFET after exposure to vapors of various explosive compounds. However, a similar device response was not observed to strong oxidizing agents such as benzoquinone (BQ) and benzophenone (BP). Also, the use of organic semiconducting material sensors for determining total ionizing radiation dose was studied, wherein the conductivity of the material was measured as a function of total ionizing radiation dose. An organic semiconducting material resistor was exposed to γ-radiation and it was observed that the change in resistance was proportional to the ionizing radiation dose. Changes in various parameters extracted from electrical characteristics of the OFET after γ-radiation exposure resulted in an improved sensitivity. To protect the organic semiconductor layer from the degradation in the ambient the sensors were passivated with a thin layer of silicon nitride.

Influence of Structural and Electrical Characteristics of Extended Defects on GaAs Field Effect Transistors

1987 ◽  
Vol 104 ◽  
Author(s):  
M. Van Hove ◽  
W. De Raedt ◽  
M. De Potter ◽  
M. Van Rossum ◽  
J. L. Weyher
Keyword(s):  
Systematic Study ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Extended Defects ◽  
Electrical Characteristics ◽  
Systematic Mapping ◽  
Gaas Substrates ◽  
Lec Gaas ◽  
Induced Defects ◽  
Processing Steps

ABSTRACTThe paper presents a systematic study of grown-in and process-induced defects on LEC GaAs substrates. Defects have been revealed by photoetching the wafers with diluted Sirti-like solutions after various processing steps. MESFET arrays have been processed on the wafers and a systematic mapping of the I-V characteristics has been performed. A correlation between various defect configurations and the FET threshold voltage shifts has been established.

scholarly journals Modeling Radiation-Induced Degradation in Top-Gated Epitaxial Graphene Field-Effect-Transistors (FETs)

Electronics ◽  
2013 ◽  
Vol 2 (4) ◽  
pp. 234-245 ◽  
Author(s):  
Ivan Esqueda ◽  
Cory Cress ◽  
Travis Anderson ◽  
Jonathan Ahlbin ◽  
Michael Bajura ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Graphene ◽  
Radiation Induced

A mechanism for radiation‐induced degradation in GaAs field‐effect transistors

1985 ◽  
Vol 57 (2) ◽  
pp. 581-590 ◽  
Author(s):  
F. A. Buot ◽  
W. T. Anderson ◽  
A. Christou ◽  
A. B. Campbell ◽  
A. R. Knudson
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Radiation Induced
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