2009 European Conference on Radiation and Its Effects on Components and Systems

Using Oxide-Trap Charge-Pumping method in radiation reliability analysis of short lightly doped drain transistor

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994552 ◽

2009 ◽

Author(s):

Boualem Djezzar ◽

Hakim Tahi

Keyword(s):

Reliability Analysis ◽

Trap Charge ◽

Charge Pumping ◽

Oxide Trap ◽

Lightly Doped Drain

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Fast SER evaluation of embedded RAMs in fault emulation systems

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994590 ◽

2009 ◽

Author(s):

Marta Portela-Garcia ◽

Celia Lopez-Ongil ◽

Mario Garcia-Valderas ◽

Enrique San Millan ◽

Luis Entrena

Keyword(s):

Fault Emulation

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A deep level transient spectroscopy study of electron and proton irradiated p+n GaAs diodes

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994593 ◽

2009 ◽

Author(s):

Jeffrey H. Warner ◽

Scott R. Messenger ◽

Robert J. Walters ◽

Steve A. Ringel ◽

Mark R. Brenner

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Spectroscopy Study ◽

Transient Spectroscopy

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In flight observation of proton induced destructive single event phenomena

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994566 ◽

2009 ◽

Cited By ~ 12

Author(s):

Francoise Bezerra ◽

Eric Lorfevre ◽

Robert Ecoffet ◽

Daniel Peyre ◽

Christain Binois ◽

...

Keyword(s):

Single Event

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The conversion model of low dose rate effect in bipolar transistors

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994661 ◽

2009 ◽

Cited By ~ 15

Author(s):

V. S. Pershenkov ◽

D. V. Savchenkov ◽

A. S. Bakerenkov ◽

V. N. Ulimov ◽

A. Y. Nikiforov ◽

...

Keyword(s):

Dose Rate ◽

Low Dose ◽

Bipolar Transistors ◽

Rate Effect ◽

Conversion Model ◽

Low Dose Rate ◽

Dose Rate Effect

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Single event upset and multiple cell upset modeling in commercial bulk 65 nm CMOS SRAMs and flip-flops

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994579 ◽

2009 ◽

Cited By ~ 3

Author(s):

Slawosz Uznanski ◽

Gilles Gasiot ◽

Philippe Roche ◽

Clement Tavernier ◽

Jean-Luc Autran

Keyword(s):

Single Event Upset ◽

Single Event ◽

Multiple Cell

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Fault tolerant FIR filters using hamming codes

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994701 ◽

2009 ◽

Cited By ~ 2

Author(s):

Shih-Fu Liu ◽

Pedro Reviriego ◽

Juan Antonio Maestro

Keyword(s):

Fault Tolerant ◽

Fir Filters ◽

Hamming Codes

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Inner belt anisotropy investigations based on the Standard Radiation Environment Monitor (SREM)

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994710 ◽

2009 ◽

Author(s):

M. Siegl ◽

H. D. R. Evans ◽

E. J. Daly ◽

G. Santin ◽

P. Nieminen ◽

...

Keyword(s):

Radiation Environment

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Characterization of new radiation hardened bipolar operational amplifiers

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994727 ◽

2009 ◽

Author(s):

Geraldine Chaumont ◽

Benoit Cornanguer ◽

Patrick Briand ◽

Christophe Prugne ◽

Florence Malou

Keyword(s):

Operational Amplifiers ◽

Radiation Hardened

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Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

2009 European Conference on Radiation and Its Effects on Components and Systems ◽

10.1109/radecs.2009.5994543 ◽

2009 ◽

Author(s):

Ivan S. Esqueda ◽

Hugh J. Barnaby ◽

Keith E. Holbert ◽

Farah E. Mamouni ◽

Ronald D. Schrimpf

Keyword(s):

Ionizing Radiation ◽

Field Effect ◽

Field Effect Transistors ◽

Radiation Induced

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2009 European Conference on Radiation and Its Effects on Components and Systems
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Using Oxide-Trap Charge-Pumping method in radiation reliability analysis of short lightly doped drain transistor

Fast SER evaluation of embedded RAMs in fault emulation systems

A deep level transient spectroscopy study of electron and proton irradiated p+n GaAs diodes

In flight observation of proton induced destructive single event phenomena

The conversion model of low dose rate effect in bipolar transistors

Single event upset and multiple cell upset modeling in commercial bulk 65 nm CMOS SRAMs and flip-flops

Fault tolerant FIR filters using hamming codes

Inner belt anisotropy investigations based on the Standard Radiation Environment Monitor (SREM)

Characterization of new radiation hardened bipolar operational amplifiers

Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

Export Citation Format

2009 European Conference on Radiation and Its Effects on Components and SystemsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Using Oxide-Trap Charge-Pumping method in radiation reliability analysis of short lightly doped drain transistor

Fast SER evaluation of embedded RAMs in fault emulation systems

A deep level transient spectroscopy study of electron and proton irradiated p+n GaAs diodes

In flight observation of proton induced destructive single event phenomena

The conversion model of low dose rate effect in bipolar transistors

Single event upset and multiple cell upset modeling in commercial bulk 65 nm CMOS SRAMs and flip-flops

Fault tolerant FIR filters using hamming codes

Inner belt anisotropy investigations based on the Standard Radiation Environment Monitor (SREM)

Characterization of new radiation hardened bipolar operational amplifiers

Modeling of ionizing radiation-induced degradation in multiple gate field effect transistors

2009 European Conference on Radiation and Its Effects on Components and Systems
Latest Publications