scholarly journals Synthesis of ZnO nanowires on Ti/glass substrates by DC magnetron sputter deposition

2014 ◽  
Vol 17 (2) ◽  
pp. 47-55
Author(s):  
Cam Thi Mong Dinh ◽  
Thang Bach Phan ◽  
Hoang Thanh Nguyen
Keyword(s):  
Xrd Analysis ◽  
Sputter Deposition ◽  
Zno Nanowires ◽  
X Ray Diffraction ◽  
One Dimensional ◽  
X Ray ◽  
Glass Substrates ◽  
Plating Method ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

One-dimensional (1-D) zinc oxide (ZnO) nanostructures, such as ZnO nanowires and nanorods, have in recent years attracted a lot of attention due to their many unique properties and possibility that can be applied to various nanoscale functional devices. In this study, ZnO nanowires have been successfully synthesized on Ti/glass substrates by an DC magnetron sputter deposition technique. Deposition of ZnO using this technique generally leads to the formation of ZnO thin film but not of nanowire. So prior to the ZnO deposition, a Cu labyer was prepared on the Ti/glass substrate using an electroless plating method under different conditions. X-ray diffraction (XRD) analysis confirmed that the ZnO nanowires with wurtzite structures have high crystal quality and are c-axis orientated. Scanning electron microscopy (SEM) showed the diameters of nanowires normally range from 60 to 150 nm and their lengths reach 20 μm. Photoluminescence (PL) measurements were adopted to analyze the optical properties of the nanowires. The existence of an electroless Cu layer is critical for the growth of the ZnO nanowires. In addition, the effect of the Cu deposition conditions on the diameters and lengths of the ZnO nanowires is discussed in details.

Beryllium-Based Multilayer Structures

1995 ◽  
Vol 382 ◽  
Author(s):  
D. G. Stearns ◽  
K. M. Skulina ◽  
M. Wall ◽  
C. S. Alford ◽  
R. M. Bionta ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Normal Incidence ◽  
Sputter Deposition ◽  
Multilayer Structures ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

ABSTRACTMultilayer (ML) structures composed of Mo-Be, Ru-Be and Rh-Be with bilayer periods of - 6 nm have been grown using dc magnetron sputter deposition. The ML microstructure has been characterized using x-ray diffraction and high-resolution transmission electron microscopy, and the normal incidence reflectivity has been measured at soft x-ray wavelengths.

XRD Investigations on Film Thickness and Substrate Temperature Effects of DC Magnetron Sputtered ZnO Films

2013 ◽  
Vol 845 ◽  
pp. 241-245
Author(s):  
Jian Wei Hoon ◽  
Kah Yoong Chan ◽  
Cheng Yang Low
Keyword(s):  
Film Thickness ◽  
Substrate Temperature ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Direct Current Plasma ◽  
Crystallite Sizes ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Diffraction Patterns

In this paper, direct current plasma magnetron sputter deposition technique was employed to deposit zinc oxide (ZnO) films on glass substrates. The magnetron sputtering process parameters including film thickness and substrate temperature were investigated. The crystallite sizes of the ZnO films were extracted from the measured X-ray diffraction patterns. The correlation of the crystallite size of the ZnO films with the film thickness and the substrate temperature will be discussed in this paper.

Analysis of Selected Area Diffraction Patterns With Winjade

1998 ◽  
Vol 4 (S2) ◽  
pp. 342-343 ◽  
Author(s):  
S. D. Walck ◽  
P. Ruzakowski-Athey
Keyword(s):  
Single Phase ◽  
Xrd Analysis ◽  
Analysis Program ◽  
X Ray Diffraction ◽  
Program Module ◽  
Vast Number ◽  
One Dimensional ◽  
X Ray ◽  
Diffraction Patterns ◽  
Xrd Patterns

The analysis of Selected Area Diffraction (SAD) patterns that are collected from a single phase material having sufficient crystallites to provide continuous rings is relatively straightforward. However, when this condition is not met and there may be several phases present having rings of a spotty nature, the pattern is complex and can be quite difficult to analyze manually because of the vast number of discrete spots. WinJade from MDI is an X-ray diffraction (XRD) analysis program with an Electron Diffraction Program Module (EDPM) that can be used to aid in the analysis of SAD patterns. The EDPM produces Integrated Circular Density Plots (ICDP), which are one-dimensional intensity profiles plotted as a function of equivalent XRD 20 values or crystal d-spacings. These ICDP's can be overlayed with XRD patterns or with reference lines from the NIST and JCPDS crystalline databases for direct comparisons.

Bi-Based Superconducting Multilayers Obtained by Molecular Beam Epitaxy

1999 ◽  
Vol 13 (09n10) ◽  
pp. 991-996
Author(s):  
M. Salvato ◽  
C. Attanasio ◽  
G. Carbone ◽  
T. Di Luccio ◽  
S. L. Prischepa ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Xrd Analysis ◽  
High Energy ◽  
X Ray Diffraction ◽  
One Dimensional ◽  
X Ray ◽  
Diffraction Model ◽  
Different Thickness

High temperature superconducting multilayers have been obtained depositing Bi2Sr2CuO6+δ(2201) and ACuO2 layers, where A is Ca or Sr, by Molecular Beam Epitaxy (MBE) on MgO and SrTiO3 substrates. The samples, formed by a sequence of 2201/ACuO2 bilayers, have different thickness of ACuO2 layers while the thickness of the 2201 layers is kept constant. The surface structure of each layer has been monitored by in situ Reflection High Energy Electron Diffraction (RHEED) analysis which has confirmed a 2D nucleation growth. X-ray diffraction (XRD) analysis has been used to confirm that the layered structure has been obtained. Moreover, one-dimensional X-ray kinematic diffraction model has been developed to interpret the experimental data and to estimate the period of the multilayers. Resistive measurements have shown that the electrical properties of the samples strongly depend on the thickness of the ACuO2 layers.

Single crystal wurtzite GaN on (111) GaAs with AlN buffer layers grown by reactive magnetron sputter deposition

1993 ◽  
Vol 8 (10) ◽  
pp. 2613-2616 ◽  
Author(s):  
Jennifer Ross ◽  
Mike Rubin ◽  
T.K. Gustafson
Keyword(s):  
Single Crystal ◽  
Growth Conditions ◽  
Sputter Deposition ◽  
Buffer Layers ◽  
Reactive Magnetron ◽  
X Ray Diffraction ◽  
Reactive Sputter Deposition ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Aln Buffer

We report the growth conditions necessary for highly oriented wurtzite GaN films on (111) GaAs, and single crystal GaN films on (111) GaAs using AlN buffer layers. The GaN films and AlN buffers are grown using rf reactive magnetron sputter deposition. Oriented basal plane wurtzite GaN is obtained on (111) GaAs at temperatures between 550 and 620 °C. However, using a high temperature 200 Å AlN buffer layer epitaxial GaN is produced. Crystal structure and quality are measured using x-ray diffraction (XRD), reflection electron diffraction (RED), and a scanning electron microscope (SEM). This is the first report of single crystal wurtzite GaN on (111) GaAs using AlN buffer layers by any growth technique. Simple AlN/GaN heterostructures grown by rf reactive sputter deposition on (111) GaAs are also demonstrated.

Studying Density vs Ar-pressures for optimization of DC-magnetron sputter deposition of Ni/C multilayers for hard x-ray telescopes

1997 ◽  
Author(s):  
Ahsen M. Hussain ◽  
Suzanne E. Romaine ◽  
Paul Gorenstein ◽  
John E. Everett ◽  
Ricardo J. Bruni ◽  
...  
Keyword(s):  
Sputter Deposition ◽  
X Ray ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

scholarly journals Collimated Magnetron Sputter Deposition for Mirror Coatings

2008 ◽  
Vol 2008 ◽  
pp. 1-9 ◽  
Author(s):  
Anette Vickery ◽  
Carsten P. Jensen ◽  
Finn E. Christensen ◽  
Mads Peter Steenstrup ◽  
Troels Schønfeldt
Keyword(s):  
Magnetron Sputtering ◽  
Experimental Evidence ◽  
Sputter Deposition ◽  
X Ray ◽  
National Space ◽  
Planar Magnetron ◽  
Different Types ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Present Experimental Evidence

At the Danish National Space Center (DNSC), a planar magnetron sputtering chamber has been established as a research and production coating facility for curved X-ray mirrors for hard X-ray optics for astronomical X-ray telescopes. In the following, we present experimental evidence that a collimation of the sputtered particles is an efficient way to suppress the interfacial roughness of the produced multilayer. We present two different types of collimation optimized for the production of low roughness curved mirrors and flat mirrors, respectively.

scholarly journals Optical and Electrical Properties of Ag-Doped In2S3Thin Films Prepared by Thermal Evaporation

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Peijie Lin ◽  
Sile Lin ◽  
Shuying Cheng ◽  
Jing Ma ◽  
Yunfeng Lai ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Xrd Analysis ◽  
Optical And Electrical Properties ◽  
X Ray Diffraction ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates ◽  
Hall Measurement System

Ag-doped In2S3(In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3and AgIn5S8phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103to5.478×10-2 Ω·cm.

Structural and Optical Properties of Mn-Doped ZnO Thin Films Prepared by SILAR Method

2017 ◽  
Vol 73 ◽  
pp. 22-30
Author(s):  
Marimuthu Karunakaran ◽  
S. Maheswari ◽  
Kasinathan Kasirajan ◽  
Sivaji Dinesh Raj ◽  
Rathinam Chandramohan
Keyword(s):  
Thin Films ◽  
Xrd Analysis ◽  
Layer Growth ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Silar Method ◽  
X Ray ◽  
Glass Substrates ◽  
Mn Doped

The growth of highly textured Mn doped Zinc oxide (ZnO) thin films with a preferred (002) orientation has been reported by employing successive ionic layer growth by adsorption reaction (SILAR) using a sodium zincate bath on glass substrates has been reported. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM) measurement. The XRD analysis reveals that the films were polycrystalline. Morphology of the films was found to be uniform with smaller grains and exhibits a structure with porous. The calculated Band gap value was found to be 3.21 eV prepared at 15 mM MnSO4 concentration.

Sign in / Sign up

Export Citation Format

Share Document