Characterization of silver doped In2S3 films

Silver doped Indium sulphide thin films with different [Ag/In] molar ratio concentrations (0, 0.9, 1.0, 1.1) were deposited on glass substrates using chemical bath deposition method. The structural, morphological, optical and electrical properties are characterized using XRD, EDAX, SEM, AFM, spectrophotometer and Hall measurement system, respectively. Kramers-Kronig method was used to obtain optical constants of the films. It is found that Ag can change physical properties of Indium sulfide thin films, depending on the Ag concentration. XRD results show the incorporation of Ag concentration did not change the structure of In2S3. Doped films had rough surfaces. As the [Ag/In] molar ratio increased, conductivity increases and optical direct band gap energy decreases from 2.75 to 2.38 eV.

Optical and Electrical Properties of Ag-Doped In2S3Thin Films Prepared by Thermal Evaporation

Ag-doped In2S3(In2S3:Ag) thin films have been deposited onto glass substrates by a thermal evaporation method. Ag concentration is varied from 0 at.% to 4.78 at.%. The structural, optical, and electrical properties are characterized using X-ray diffraction (XRD), spectrophotometer, and Hall measurement system, respectively. The XRD analysis confirms the existence of In2S3and AgIn5S8phases. With the increase of the Ag concentration, the band gap of the films is decreased gradually from 2.82 eV to 2.69 eV and the resistivity drastically is decreased from ~103to5.478×10-2 Ω·cm.