scholarly journals Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

2015 ◽  
Vol 66 (5) ◽  
pp. 277-281 ◽  
Author(s):  
Marián Marton ◽  
Miroslav Mikolášek ◽  
Jaroslav Bruncko ◽  
Ivan Novotný ◽  
Tibor Ižák ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Thin Layers ◽  
Boron Doped Diamond ◽  
Sensor Applications ◽  
Glass Substrates ◽  
Boron Doped ◽  
Semiconducting Properties ◽  
Structural And Electrical Properties ◽  
Wide Bandgap Materials ◽  
P Type

Abstract Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

Transparent ohmic contact for boron doped diamond using p-type NiO film synthesized through oxidation

2020 ◽  
Vol 105 ◽  
pp. 104740 ◽  
Author(s):  
Tong Zhang ◽  
Xiaobo Li ◽  
Taofei Pu ◽  
Qiliang Wang ◽  
Shaoheng Cheng ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
P Type

Dye-sensitization of boron-doped diamond foam: champion photoelectrochemical performance of diamond electrodes under solar light illumination

RSC Advances ◽  
2015 ◽  
Vol 5 (99) ◽  
pp. 81069-81077 ◽  
Author(s):  
Hana Krysova ◽  
Ladislav Kavan ◽  
Zuzana Vlckova Zivcova ◽  
Weng Siang Yeap ◽  
Pieter Verstappen ◽  
...  
Keyword(s):  
Electrode Materials ◽  
Hollow Spheres ◽  
Dye Sensitized Solar Cells ◽  
Light Illumination ◽  
Photoelectrochemical Performance ◽  
Boron Doped Diamond ◽  
Dye Sensitization ◽  
Boron Doped ◽  
Donor Acceptor ◽  
P Type

Diamond foams composed of hollow spheres of polycrystalline boron-doped diamond are chemically modified with two donor–acceptor type molecular dyes, BT-Rho and CPDT-Fur, and tested as electrode materials for p-type dye-sensitized solar cells.

scholarly journals Application Properties of ZnO and AZO Thin Films Obtained by the ALD Method

Energies ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 6271
Author(s):  
Barbara Swatowska ◽  
Wiesław Powroźnik ◽  
Halina Czternastek ◽  
Gabriela Lewińska ◽  
Tomasz Stapiński ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Deionized Water ◽  
Thin Layers ◽  
Glass Substrates

The thin layers of ZnO and ZnO: Al (Al doped zinc oxide—AZO) were deposited by the atomic deposition layer (ALD) method on silicon and glass substrates. The structures were deposited using diethylzinc (DEZ) and deionized water as zinc and oxygen precursors. A precursor of trimethylaluminum (TMA) was used to introduce the aluminum dopant. The present study of ALD-deposited ZnO and AZO films was motivated by their applications in photovoltaics. We attempted to expose several properties of such films. Structural, optical (including ellipsometric measurements) and electrical investigations were performed. We discussed the relations between samples doped with different Al fractions and their properties.

scholarly journals Boron–oxygen complex yields n-type surface layer in semiconducting diamond

2019 ◽  
Vol 116 (16) ◽  
pp. 7703-7711 ◽  
Author(s):  
Xiaobing Liu ◽  
Xin Chen ◽  
David J. Singh ◽  
Richard A. Stern ◽  
Jinsong Wu ◽  
...  
Keyword(s):  
Chemical Properties ◽  
Shallow Donor ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
High Pressure High Temperature ◽  
Type Semiconductor ◽  
High Carrier ◽  
Semiconducting Diamond ◽  
P Type ◽  
Physical And Chemical

Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits development of an effective n-type dopant with satisfactory electrical properties. Here we report the synthesis of n-type diamond, containing boron (B) and oxygen (O) complex defects. We obtain high carrier concentration (∼0.778 × 1021 cm−3) several orders of magnitude greater than previously obtained with sulfur or phosphorous, accompanied by high electrical conductivity. In high-pressure high-temperature (HPHT) boron-doped diamond single crystal we formed a boron-rich layer ∼1–1.5 μm thick in the {111} surface containing up to 1.4 atomic % B. We show that under certain HPHT conditions the boron dopants combine with oxygen defects to form B–O complexes that can be tuned by controlling the experimental parameters for diamond crystallization, thus giving rise to n-type conduction. First-principles calculations indicate that B3O and B4O complexes with low formation energies exhibit shallow donor levels, elucidating the mechanism of the n-type semiconducting behavior.

Mechanism of p-type-to-n-type conductivity conversion in boron-doped diamond

2004 ◽  
Vol 84 (11) ◽  
pp. 1895-1897 ◽  
Author(s):  
Ying Dai ◽  
Dadi Dai ◽  
Donghong Liu ◽  
Shenghao Han ◽  
Baibiao Huang
Keyword(s):  
Boron Doped Diamond ◽  
Type Conductivity ◽  
Boron Doped ◽  
P Type

Efficient photocatalyst based on ZnO nanorod arrays/p-type boron-doped-diamond heterojunction

2014 ◽  
Vol 26 (2) ◽  
pp. 1018-1022 ◽  
Author(s):  
Shiyong Gao ◽  
Shujie Jiao ◽  
Bin Lei ◽  
Hongtao Li ◽  
Jinzhong Wang ◽  
...  
Keyword(s):  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
P Type

Growth of Device-Quality Homoepitaxial Diamond Thin Films

1989 ◽  
Vol 162 ◽  
Author(s):  
M. W. Geis
Keyword(s):  
Activation Energy ◽  
Growth Conditions ◽  
Device Fabrication ◽  
Diamond Growth ◽  
High Resistivity ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Heavily Doped ◽  
P Type

ABSTRACTDiamond has an electric-field breakdown 20 times that of Si and GaAs, and a saturated velocity twice that of Si. This results in a predicted cut off frequency for high-power diamond transistors 40 times that of similar devices made of Si or GaAs. Boron is the only known impurity that can be used to lightly dope diamond. This p-type dopant has an activation energy of 0.3 to 0.4 eV, which results in high-resistivity material that is undesirable for devices. However, heavily boron doped diamond has a very small activation energy and a low resistivity and is of device quality. Transistors can be designed that use only undoped and heavily doped diamond. One of the steps in a device fabrication sequence is homoepitaxial diamond growth. Lightly and heavily doped homoepitaxial diamond films were characterized by scanning and transmission electron microscopy, x-ray diffraction, measurements of resistivity as a function of temperature, and secondary ion mass spectroscopy. It was found that under appropriate growth conditions these films are of device quality.

Optical and Electrical Properties of SnS: Ag Films as Solar Cell Absorbers

2009 ◽  
Vol 60-61 ◽  
pp. 11-15 ◽  
Author(s):  
Pe Min Lu ◽  
Hong Jie Jia ◽  
Shu Ying Cheng
Keyword(s):  
X Ray Diffraction ◽  
Average Roughness ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Semiconducting Properties ◽  
Direct Band ◽  
Diffraction Peaks ◽  
P Type

SnS and Ag films were deposited on glass substrates by vacuum thermal evaporation successively, then they were annealed in N2 ambience at a temperature of 300 oC for 2h. By controlling the Ag evaporation voltage to roughly alter content of Ag in SnS films, different Ag-doped SnS films were obtained. The microstructures, composition and properties of the films were characterized with X-ray diffraction ( XRD ), atomic force microscopy(AFM) and some other methods. With the increase of Ag evaporation voltage (VAg), there exist new phases of Ag8SnS6 and Ag2S, whose intensity of diffraction peaks increases with the increasing Ag-dopant, and the average roughness of the films varies from 18.7nm to 23.6nm, and grain size increases from 192nm to 348nm. With the increase of VAg, the evaluated direct band gap Eg of the films decreases from 2.28eV(undoped) to 2.05eV (VAg=70V), the carrier concentration value and Hall mobility of the films diminishes from 2.048×1014cm-3 and 25.96 cm2.v-2.s-1 to 1.035×1016 cm-3 and 5.66 cm2.v-2.s-1, respectively; while the resistivity of the films decreases sharply from 1174Ω.cm(undoped ) to 107Ω.cm (VAg=70V ). All the films are of p-type conductivity. The above results show that the semiconducting properties of the SnS films have been improved by silver-doping.

scholarly journals Optical, structural and electrical properties of nanosized zinc oxide sintered films for photovoltaic applications

2013 ◽  
Vol 45 (1) ◽  
pp. 13-19 ◽  
Author(s):  
V. Kumar ◽  
D.K. Dwivedi ◽  
P. Agrawal
Keyword(s):  
Zinc Oxide ◽  
Hexagonal Structure ◽  
Sintering Process ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Zinc Oxide Films ◽  
Double Beam ◽  
Structural And Electrical Properties ◽  
Nanosized Zinc Oxide ◽  
Photovoltaic Applications

Zinc oxide films have been deposited on ultra-clean glass substrates by screenprinting method followed by sintering process. Optimum conditions for preparing good quality screen-printed films have been found. The optical band gap of the films has been studied using reflection spectra in wavelength range 325-600 nm by using double beam spectrophotometer. X-ray diffraction studies revealed that the films are polycrystalline in nature, single phase exhibiting wurtzite (hexagonal) structure with strong preferential orientation of grains along the (101) direction. Surface morphology of films has been studied by scanning electron microscopy (SEM) technique. The electrical resistivity of the films was measured in vacuum by two probe technique. PACS: 78.20.Ci; 78.50.Ge; 78.66.-w; 78.66.Hf.

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