Mechanism of p-type-to-n-type conductivity conversion in boron-doped diamond

2004 ◽  
Vol 84 (11) ◽  
pp. 1895-1897 ◽  
Author(s):  
Ying Dai ◽  
Dadi Dai ◽  
Donghong Liu ◽  
Shenghao Han ◽  
Baibiao Huang
Keyword(s):  
Boron Doped Diamond ◽  
Type Conductivity ◽  
Boron Doped ◽  
P Type

Formation of deuterium-related shallow donors in boron-doped diamond.

2004 ◽  
Vol 813 ◽  
Author(s):  
Jacques Chevallier ◽  
Zéphirin Teukam ◽  
Cécile Saguy ◽  
Rafi Kalish ◽  
Catherine Cytermann ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Electron Mobility ◽  
Present Status ◽  
Ionization Energy ◽  
Type Conversion ◽  
Boron Doped Diamond ◽  
Type Conductivity ◽  
Shallow Donors ◽  
Boron Doped ◽  
P Type

ABSTRACTIt is well known that diffusion of deuterium in boron-doped diamond results in the passivation of boron acceptors with the formation of (B,D) complexes. In this work, we show that deuteration of boron-doped diamond can induce a p-type to n-type conversion under certain conditions. The n-type conductivity is governed by the ionization of shallow donors with a ionization energy of 0.34 eV. This is well below the lowest ionization energy of donors found up to now in diamond (0.6 eV for phosphorus donors). The electrical conductivity and the electron mobility can be as high as 6 S/cm and 430 cm2/Vs at 300 K. The reversibility of the effect under thermal annealing and the necessity of excess deuterium to trigger the n-type conductivity suggest that deuterium is involved in the formation of the shallow donors. The present status concerning the understanding of their origin is discussed. In addition, we have found that, contrary to previous conclusions, deuterium can diffuse in type Ib diamond. The conditions where this diffusion is observed are presented.

Transparent ohmic contact for boron doped diamond using p-type NiO film synthesized through oxidation

2020 ◽  
Vol 105 ◽  
pp. 104740 ◽  
Author(s):  
Tong Zhang ◽  
Xiaobo Li ◽  
Taofei Pu ◽  
Qiliang Wang ◽  
Shaoheng Cheng ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
P Type

Dye-sensitization of boron-doped diamond foam: champion photoelectrochemical performance of diamond electrodes under solar light illumination

RSC Advances ◽  
2015 ◽  
Vol 5 (99) ◽  
pp. 81069-81077 ◽  
Author(s):  
Hana Krysova ◽  
Ladislav Kavan ◽  
Zuzana Vlckova Zivcova ◽  
Weng Siang Yeap ◽  
Pieter Verstappen ◽  
...  
Keyword(s):  
Electrode Materials ◽  
Hollow Spheres ◽  
Dye Sensitized Solar Cells ◽  
Light Illumination ◽  
Photoelectrochemical Performance ◽  
Boron Doped Diamond ◽  
Dye Sensitization ◽  
Boron Doped ◽  
Donor Acceptor ◽  
P Type

Diamond foams composed of hollow spheres of polycrystalline boron-doped diamond are chemically modified with two donor–acceptor type molecular dyes, BT-Rho and CPDT-Fur, and tested as electrode materials for p-type dye-sensitized solar cells.

scholarly journals Boron–oxygen complex yields n-type surface layer in semiconducting diamond

2019 ◽  
Vol 116 (16) ◽  
pp. 7703-7711 ◽  
Author(s):  
Xiaobing Liu ◽  
Xin Chen ◽  
David J. Singh ◽  
Richard A. Stern ◽  
Jinsong Wu ◽  
...  
Keyword(s):  
Chemical Properties ◽  
Shallow Donor ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
High Pressure High Temperature ◽  
Type Semiconductor ◽  
High Carrier ◽  
Semiconducting Diamond ◽  
P Type ◽  
Physical And Chemical

Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits development of an effective n-type dopant with satisfactory electrical properties. Here we report the synthesis of n-type diamond, containing boron (B) and oxygen (O) complex defects. We obtain high carrier concentration (∼0.778 × 1021 cm−3) several orders of magnitude greater than previously obtained with sulfur or phosphorous, accompanied by high electrical conductivity. In high-pressure high-temperature (HPHT) boron-doped diamond single crystal we formed a boron-rich layer ∼1–1.5 μm thick in the {111} surface containing up to 1.4 atomic % B. We show that under certain HPHT conditions the boron dopants combine with oxygen defects to form B–O complexes that can be tuned by controlling the experimental parameters for diamond crystallization, thus giving rise to n-type conduction. First-principles calculations indicate that B3O and B4O complexes with low formation energies exhibit shallow donor levels, elucidating the mechanism of the n-type semiconducting behavior.

Efficient photocatalyst based on ZnO nanorod arrays/p-type boron-doped-diamond heterojunction

2014 ◽  
Vol 26 (2) ◽  
pp. 1018-1022 ◽  
Author(s):  
Shiyong Gao ◽  
Shujie Jiao ◽  
Bin Lei ◽  
Hongtao Li ◽  
Jinzhong Wang ◽  
...  
Keyword(s):  
Zno Nanorod ◽  
Nanorod Arrays ◽  
Zno Nanorod Arrays ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
P Type

Growth of Device-Quality Homoepitaxial Diamond Thin Films

1989 ◽  
Vol 162 ◽  
Author(s):  
M. W. Geis
Keyword(s):  
Activation Energy ◽  
Growth Conditions ◽  
Device Fabrication ◽  
Diamond Growth ◽  
High Resistivity ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Heavily Doped ◽  
P Type

ABSTRACTDiamond has an electric-field breakdown 20 times that of Si and GaAs, and a saturated velocity twice that of Si. This results in a predicted cut off frequency for high-power diamond transistors 40 times that of similar devices made of Si or GaAs. Boron is the only known impurity that can be used to lightly dope diamond. This p-type dopant has an activation energy of 0.3 to 0.4 eV, which results in high-resistivity material that is undesirable for devices. However, heavily boron doped diamond has a very small activation energy and a low resistivity and is of device quality. Transistors can be designed that use only undoped and heavily doped diamond. One of the steps in a device fabrication sequence is homoepitaxial diamond growth. Lightly and heavily doped homoepitaxial diamond films were characterized by scanning and transmission electron microscopy, x-ray diffraction, measurements of resistivity as a function of temperature, and secondary ion mass spectroscopy. It was found that under appropriate growth conditions these films are of device quality.

The origin of shallow n-type conductivity in boron-doped diamond with H or S co-doping: Density functional theory study

2006 ◽  
Vol 15 (11-12) ◽  
pp. 1868-1877 ◽  
Author(s):  
Yu Cai ◽  
Tianhou Zhang ◽  
Alfred B. Anderson ◽  
John C. Angus ◽  
Lubomir N. Kostadinov ◽  
...  
Keyword(s):  
Density Functional Theory ◽  
Density Functional ◽  
Density Functional Theory Study ◽  
Boron Doped Diamond ◽  
Doping Density ◽  
Functional Theory ◽  
Type Conductivity ◽  
Co Doping ◽  
Boron Doped

scholarly journals Fabrication and Characterization of N-Type Zinc Oxide/P-Type Boron Doped Diamond Heterojunction

2015 ◽  
Vol 66 (5) ◽  
pp. 277-281 ◽  
Author(s):  
Marián Marton ◽  
Miroslav Mikolášek ◽  
Jaroslav Bruncko ◽  
Ivan Novotný ◽  
Tibor Ižák ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Thin Layers ◽  
Boron Doped Diamond ◽  
Sensor Applications ◽  
Glass Substrates ◽  
Boron Doped ◽  
Semiconducting Properties ◽  
Structural And Electrical Properties ◽  
Wide Bandgap Materials ◽  
P Type

Abstract Diamond and ZnO are very promising wide-bandgap materials for electronic, photovoltaic and sensor applications because of their excellent electrical, optical, physical and electrochemical properties and biocompatibility. In this contribution we show that the combination of these two materials opens up the potential for fabrication of bipolar heterojunctions. Semiconducting boron doped diamond (BDD) thin films were grown on Si and UV grade silica glass substrates by HFCVD method with various boron concentration in the gas mixture. Doped zinc oxide (ZnO:Al, ZnO:Ge) thin layers were deposited by diode sputtering and pulsed lased deposition as the second semiconducting layer on the diamond films. The amount of dopants within the films was varied to obtain optimal semiconducting properties to form a bipolar p-n junction. Finally, different ZnO/BDD heterostructures were prepared and analyzed. Raman spectroscopy, SEM, Hall constant and I-V measurements were used to investigate the quality, structural and electrical properties of deposited heterostructures, respectively. I-V measurements of ZnO/BDD diodes show a rectifying ratio of 55 at ±4 V. We found that only very low dopant concentrations for both semiconducting materials enabled us to fabricate a functional p-n junction. Obtained results are promising for fabrication of optically transparent ZnO/BDD bipolar heterojunction.

Temperature Sensor On Boron Ion Implanted Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
R. Job ◽  
A. V. Denisenko ◽  
A. M. Zaitsev ◽  
M. Werner ◽  
A. A. Melnikov ◽  
...  
Keyword(s):  
Activation Energy ◽  
Temperature Sensor ◽  
Boron Concentration ◽  
Theoretical Models ◽  
Boron Doped Diamond ◽  
Compensation Ratio ◽  
Boron Doped ◽  
Sensor Fabrication ◽  
Postimplantation Annealing ◽  
P Type

ABSTRACTp-type semiconducting boron doped layers have been fabricated on diamond substrates by ion implantation and subsequent annealing. A number of the related published experimental data and theoretical models on electrical properties of boron doped diamond are analyzed with regard to the temperature coefficient of resistance (TCR) of temperature sensors. The dependencies of the conductivity and activation energy on three parameters: (i) boron doping level NA, (ii) electrical compensation ratio ND/NA- C and (iii) duration of the postimplantation annealing time ta are studied. By variation of NA, C and t, an optimized technological regime for the temperature sensor fabrication can be obtained. One can summarize that: 1) the TCR value is not remarkably reduced with the boron concentration up to NA -1019 cm-3, 2) an increase of the electrical compensation decreases the activation energy and consequently the TCR coefficient,3) 1 h annealing at 1500°C is sufficient to remove the compensating radiation defects, 4) the variation of the ta from 1 min to 1 h changes the TCR value by 20% to 30%. Technological steps of the fabrication of a micro temperature sensor are given.

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