Growth of Device-Quality Homoepitaxial Diamond Thin Films

1989 ◽  
Vol 162 ◽  
Author(s):  
M. W. Geis
Keyword(s):  
Activation Energy ◽  
Growth Conditions ◽  
Device Fabrication ◽  
Diamond Growth ◽  
High Resistivity ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Heavily Doped ◽  
P Type

ABSTRACTDiamond has an electric-field breakdown 20 times that of Si and GaAs, and a saturated velocity twice that of Si. This results in a predicted cut off frequency for high-power diamond transistors 40 times that of similar devices made of Si or GaAs. Boron is the only known impurity that can be used to lightly dope diamond. This p-type dopant has an activation energy of 0.3 to 0.4 eV, which results in high-resistivity material that is undesirable for devices. However, heavily boron doped diamond has a very small activation energy and a low resistivity and is of device quality. Transistors can be designed that use only undoped and heavily doped diamond. One of the steps in a device fabrication sequence is homoepitaxial diamond growth. Lightly and heavily doped homoepitaxial diamond films were characterized by scanning and transmission electron microscopy, x-ray diffraction, measurements of resistivity as a function of temperature, and secondary ion mass spectroscopy. It was found that under appropriate growth conditions these films are of device quality.

Temperature Sensor On Boron Ion Implanted Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
R. Job ◽  
A. V. Denisenko ◽  
A. M. Zaitsev ◽  
M. Werner ◽  
A. A. Melnikov ◽  
...  
Keyword(s):  
Activation Energy ◽  
Temperature Sensor ◽  
Boron Concentration ◽  
Theoretical Models ◽  
Boron Doped Diamond ◽  
Compensation Ratio ◽  
Boron Doped ◽  
Sensor Fabrication ◽  
Postimplantation Annealing ◽  
P Type

ABSTRACTp-type semiconducting boron doped layers have been fabricated on diamond substrates by ion implantation and subsequent annealing. A number of the related published experimental data and theoretical models on electrical properties of boron doped diamond are analyzed with regard to the temperature coefficient of resistance (TCR) of temperature sensors. The dependencies of the conductivity and activation energy on three parameters: (i) boron doping level NA, (ii) electrical compensation ratio ND/NA- C and (iii) duration of the postimplantation annealing time ta are studied. By variation of NA, C and t, an optimized technological regime for the temperature sensor fabrication can be obtained. One can summarize that: 1) the TCR value is not remarkably reduced with the boron concentration up to NA -1019 cm-3, 2) an increase of the electrical compensation decreases the activation energy and consequently the TCR coefficient,3) 1 h annealing at 1500°C is sufficient to remove the compensating radiation defects, 4) the variation of the ta from 1 min to 1 h changes the TCR value by 20% to 30%. Technological steps of the fabrication of a micro temperature sensor are given.

Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by Arhvtem and ab-Initio Calculation

2003 ◽  
Vol 764 ◽  
Author(s):  
Hiroyuki Togawa ◽  
Hideki Ichinose
Keyword(s):  
Ab Initio ◽  
Grain Boundaries ◽  
Ab Initio Calculation ◽  
Structure Model ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Diamond Grain ◽  
Electron Energy Loss ◽  
Atomic And Electronic Structure

AbstractAtomic resolution high-voltage transmission electron microscopy and electron energy loss spectroscopy were performed on grain boundaries of boron-doped diamond, cooperated with the ab-initio calculation. Segregated boron in the {112}∑3 boundary was caught by the EELS spectra. The change in atomic structure of the segregated boundary was successfully observed from the image by ARHVTEM. Based on the ARHVTEM image, a segregted structure model was proposed.

scholarly journals Deposition of Boron-Doped Thin CVD Diamond Films from Methane-Triethyl Borate-Hydrogen Gas Mixture

Processes ◽  
2020 ◽  
Vol 8 (6) ◽  
pp. 666 ◽  
Author(s):  
Nikolay Ivanovich Polushin ◽  
Alexander Ivanovich Laptev ◽  
Boris Vladimirovich Spitsyn ◽  
Alexander Evgenievich Alexenko ◽  
Alexander Mihailovich Polyansky ◽  
...  
Keyword(s):  
Film Growth ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Diamond Growth ◽  
Structural Defects ◽  
Boron Doped Diamond ◽  
Diamond Deposition ◽  
Synthesis Conditions ◽  
Surface Etching ◽  
Boron Doped

Boron-doped diamond is a promising semiconductor material that can be used as a sensor and in power electronics. Currently, researchers have obtained thin boron-doped diamond layers due to low film growth rates (2–10 μm/h), with polycrystalline diamond growth on the front and edge planes of thicker crystals, inhomogeneous properties in the growing crystal’s volume, and the presence of different structural defects. One way to reduce structural imperfection is the specification of optimal synthesis conditions, as well as surface etching, to remove diamond polycrystals. Etching can be carried out using various gas compositions, but this operation is conducted with the interruption of the diamond deposition process; therefore, inhomogeneity in the diamond structure appears. The solution to this problem is etching in the process of diamond deposition. To realize this in the present work, we used triethyl borate as a boron-containing substance in the process of boron-doped diamond chemical vapor deposition. Due to the oxygen atoms in the triethyl borate molecule, it became possible to carry out an experiment on simultaneous boron-doped diamond deposition and growing surface etching without the requirement of process interruption for other operations. As a result of the experiments, we obtain highly boron-doped monocrystalline diamond layers with a thickness of about 8 μm and a boron content of 2.9%. Defects in the form of diamond polycrystals were not detected on the surface and around the periphery of the plate.

scholarly journals Quantitative In-Situ Nanoindentation of Thin Films in a Transmission Electron Microscope

2001 ◽  
Vol 7 (S2) ◽  
pp. 912-913
Author(s):  
A.M. Minorl ◽  
E.A. Stach ◽  
J.W. Morris
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Real Time ◽  
Silicon Substrates ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Transmission Electron ◽  
Diamond Indenter ◽  
Force Calibration

A unique in situ nanoindentation stage has been built and developed at the National Center for Electron Microscopy in Berkeley, CA. By using piezoceramic actuators to finely position a 3-sided, boron-doped diamond indenter, we are able to image in real time the nanoindentation induced deformation of thin films. Recent work has included the force-calibration of the indenter, using silicon cantilevers to establish a relationship between the voltage applied to the piezoactuators, the displacement of the diamond tip, and the force generated.In this work, we present real time, in situ TEM observations of the plastic deformation of Al thin films grown on top of lithographically-prepared silicon substrates. The in situ nanoindentations require a unique sample geometry (see Figure 1) in which the indenter approaches the specimen normal to the electron beam. in order to meet this requirement, special wedge-shaped silicon samples were designed and microfabricated so that the tip of the wedge is sharp enough to be electron transparent.

Transparent ohmic contact for boron doped diamond using p-type NiO film synthesized through oxidation

2020 ◽  
Vol 105 ◽  
pp. 104740 ◽  
Author(s):  
Tong Zhang ◽  
Xiaobo Li ◽  
Taofei Pu ◽  
Qiliang Wang ◽  
Shaoheng Cheng ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
P Type

SELF-ASSEMBLED Ge-DOTS FOR Si SOLAR CELLS

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4347-4351 ◽  
Author(s):  
H. PRESTING ◽  
J. KONLE ◽  
H. KIBBEL
Keyword(s):  
Solar Cells ◽  
Open Circuit Voltage ◽  
Elevated Temperatures ◽  
Growth Conditions ◽  
Open Circuit ◽  
3 Dimensional ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
P Type

Silicon solar cells with embedded germanium (Ge) layers deposited as 3-dimensional islands in the Stranski-Krastanov growth mode have been grown by molecular beam epitaxy (MBE) to enhance the efficiency of Si thin film solar cells. The Ge-layers increase the infrared absorption in the base of the cell to achieve higher photocurrent which should overcome the loss in the open circuit voltage due to incorporation of a smaller bandgap material in the heterostructure. Up to 75 layers of Ge, each about 8 monolayers (ML) thick, separated by Si-spacer layers (9-18nm) have been deposited at rather elevated temperatures (700°C) on a standard 10Ωcm p-type Si-substrate. Island densities of 1011 cm -2 have been achieved by use of antimony (Sb) as surfactant. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to characterize the growth of Ge-islands under variuos growth conditions. Photocurrent measurements exhibit a higher photo-response in the infrared regime but a lower open circuit voltage of the fabricated solar cells compared to a Si-reference cell.

Hydrogen Diffusion in Boron Doped Diamond: Evidence of Hydrogen-Boron Interactions

1998 ◽  
Vol 510 ◽  
Author(s):  
J. Chevallier ◽  
B. Theys ◽  
C. Grattepain ◽  
A. Deneuville ◽  
E. Gheeraert
Keyword(s):  
Activation Energy ◽  
Boron Concentration ◽  
Hydrogen Diffusion ◽  
Diffusion Activation Energy ◽  
Boron Doped Diamond ◽  
Boron Doped ◽  
Hydrogen Ionization ◽  
Diffusion Temperature ◽  
And Diffusion ◽  
Diffusion Activation

AbstractDeuterium diffusion has been investigated in boron doped diamond as a function of the diffusion temperature and the boron concentration. The results show that, up to 480°C, hydrogen diffusion is limited by the boron concentration with a diffusion activation energy of 0.35 eV for [B] = 5×1019 cm−3. This first experimental evidence of deuterium-boron interactions in diamond is interpreted as the result of hydrogen ionization and diffusion of fairly mobile protons which form pairs with negatively charged boron acceptors

Dye-sensitization of boron-doped diamond foam: champion photoelectrochemical performance of diamond electrodes under solar light illumination

RSC Advances ◽  
2015 ◽  
Vol 5 (99) ◽  
pp. 81069-81077 ◽  
Author(s):  
Hana Krysova ◽  
Ladislav Kavan ◽  
Zuzana Vlckova Zivcova ◽  
Weng Siang Yeap ◽  
Pieter Verstappen ◽  
...  
Keyword(s):  
Electrode Materials ◽  
Hollow Spheres ◽  
Dye Sensitized Solar Cells ◽  
Light Illumination ◽  
Photoelectrochemical Performance ◽  
Boron Doped Diamond ◽  
Dye Sensitization ◽  
Boron Doped ◽  
Donor Acceptor ◽  
P Type

Diamond foams composed of hollow spheres of polycrystalline boron-doped diamond are chemically modified with two donor–acceptor type molecular dyes, BT-Rho and CPDT-Fur, and tested as electrode materials for p-type dye-sensitized solar cells.

Effect of growth conditions on B-doped carbon nanotubes

2006 ◽  
Vol 21 (12) ◽  
pp. 3058-3064 ◽  
Author(s):  
Sara M.C. Vieira ◽  
Odile Stéphan ◽  
David L. Carroll
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Arc Discharge ◽  
Amorphous Material ◽  
Graphite Powder ◽  
Growth Conditions ◽  
Multiwalled Carbon ◽  
Boron Doped ◽  
Transmission Electron ◽  
Electron Energy Loss

The modified arc-discharge technique was used for the growth of boron-doped multiwalled carbon nanotubes. A variety of weight percentages of boron and sulfur were mixed (0.5–15 wt%) with graphite powder and packed in the consumable anode. Transmission electron microscopy, Raman spectroscopy, thermogravimetric analysis (TGA), and electron energy loss spectroscopy (EELS) were used to characterize the samples. EELS indicated a small percentage of boron present (<1 at.%) in the nanotubes. Sulfur was used primarily to enhance boron incorporation; however, Raman and TGA measurements indicated fewer defects and/or amorphous material present when sulfur was added.

scholarly journals Monolithic Integration of Nano-Ridge Engineered InGaP/GaAs HBTs on 300 mm Si Substrate

Materials ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 5682
Author(s):  
Yves Mols ◽  
Abhitosh Vais ◽  
Sachin Yadav ◽  
Liesbeth Witters ◽  
Komal Vondkar ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Cmos Technology ◽  
Growth Conditions ◽  
Device Fabrication ◽  
Threading Dislocation ◽  
Bottom Part ◽  
Transmission Electron ◽  
Hybrid Iii ◽  
Threading Dislocation Density ◽  
Rf Applications

Nano-ridge engineering (NRE) is a novel method to monolithically integrate III–V devices on a 300 mm Si platform. In this work, NRE is applied to InGaP/GaAs heterojunction bipolar transistors (HBTs), enabling hybrid III-V/CMOS technology for RF applications. The NRE HBT stacks were grown by metal-organic vapor-phase epitaxy on 300 mm Si (001) wafers with a double trench-patterned oxide template, in an industrial deposition chamber. Aspect ratio trapping in the narrow bottom part of a trench results in a threading dislocation density below 106∙cm−2 in the device layers in the wide upper part of that trench. NRE is used to create larger area NRs with a flat (001) surface, suitable for HBT device fabrication. Transmission electron microscopy inspection of the HBT stacks revealed restricted twin formation after the InGaP emitter layer contacts the oxide sidewall. Several structures, with varying InGaP growth conditions, were made, to further study this phenomenon. HBT devices—consisting of several nano-ridges in parallel—were processed for DC and RF characterization. A maximum DC gain of 112 was obtained and a cut-off frequency ft of ~17 GHz was achieved. These results show the potential of NRE III–V devices for hybrid III–V/CMOS technology for emerging RF applications.

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