Dye-sensitization of boron-doped diamond foam: champion photoelectrochemical performance of diamond electrodes under solar light illumination

RSC Advances ◽  
2015 ◽  
Vol 5 (99) ◽  
pp. 81069-81077 ◽  
Author(s):  
Hana Krysova ◽  
Ladislav Kavan ◽  
Zuzana Vlckova Zivcova ◽  
Weng Siang Yeap ◽  
Pieter Verstappen ◽  
...  

Diamond foams composed of hollow spheres of polycrystalline boron-doped diamond are chemically modified with two donor–acceptor type molecular dyes, BT-Rho and CPDT-Fur, and tested as electrode materials for p-type dye-sensitized solar cells.

2020 ◽  
Vol 105 ◽  
pp. 104740 ◽  
Author(s):  
Tong Zhang ◽  
Xiaobo Li ◽  
Taofei Pu ◽  
Qiliang Wang ◽  
Shaoheng Cheng ◽  
...  

2019 ◽  
Vol 116 (16) ◽  
pp. 7703-7711 ◽  
Author(s):  
Xiaobing Liu ◽  
Xin Chen ◽  
David J. Singh ◽  
Richard A. Stern ◽  
Jinsong Wu ◽  
...  

Diamond is a wide-bandgap semiconductor possessing exceptional physical and chemical properties with the potential to miniaturize high-power electronics. Whereas boron-doped diamond (BDD) is a well-known p-type semiconductor, fabrication of practical diamond-based electronic devices awaits development of an effective n-type dopant with satisfactory electrical properties. Here we report the synthesis of n-type diamond, containing boron (B) and oxygen (O) complex defects. We obtain high carrier concentration (∼0.778 × 1021 cm−3) several orders of magnitude greater than previously obtained with sulfur or phosphorous, accompanied by high electrical conductivity. In high-pressure high-temperature (HPHT) boron-doped diamond single crystal we formed a boron-rich layer ∼1–1.5 μm thick in the {111} surface containing up to 1.4 atomic % B. We show that under certain HPHT conditions the boron dopants combine with oxygen defects to form B–O complexes that can be tuned by controlling the experimental parameters for diamond crystallization, thus giving rise to n-type conduction. First-principles calculations indicate that B3O and B4O complexes with low formation energies exhibit shallow donor levels, elucidating the mechanism of the n-type semiconducting behavior.


2004 ◽  
Vol 84 (11) ◽  
pp. 1895-1897 ◽  
Author(s):  
Ying Dai ◽  
Dadi Dai ◽  
Donghong Liu ◽  
Shenghao Han ◽  
Baibiao Huang

Vacuum ◽  
2020 ◽  
Vol 171 ◽  
pp. 109006 ◽  
Author(s):  
Miroslav Behúl ◽  
Marian Vojs ◽  
Marián Marton ◽  
Pavol Michniak ◽  
Miroslav Mikolášek ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-10 ◽  
Author(s):  
Yuan Yu ◽  
Yanli Zhou ◽  
Liangzhuan Wu ◽  
Jinfang Zhi

Boron-doped diamond (BDD) thin films, as one kind of electrode materials, are superior to conventional carbon-based materials including carbon paste, porous carbon, glassy carbon (GC), carbon nanotubes in terms of high stability, wide potential window, low background current, and good biocompatibility. Electrochemical biosensor based on BDD electrodes have attracted extensive interests due to the superior properties of BDD electrodes and the merits of biosensors, such as specificity, sensitivity, and fast response. Electrochemical reactions perform at the interface between electrolyte solutions and the electrodes surfaces, so the surface structures and properties of the BDD electrodes are important for electrochemical detection. In this paper, the recent advances of BDD electrodes with different surfaces including nanostructured surface and chemically modified surface, for the construction of various electrochemical biosensors, were described.


2014 ◽  
Vol 26 (2) ◽  
pp. 1018-1022 ◽  
Author(s):  
Shiyong Gao ◽  
Shujie Jiao ◽  
Bin Lei ◽  
Hongtao Li ◽  
Jinzhong Wang ◽  
...  

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