scholarly journals Application Properties of ZnO and AZO Thin Films Obtained by the ALD Method

Energies ◽  
2021 ◽  
Vol 14 (19) ◽  
pp. 6271
Author(s):  
Barbara Swatowska ◽  
Wiesław Powroźnik ◽  
Halina Czternastek ◽  
Gabriela Lewińska ◽  
Tomasz Stapiński ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Deionized Water ◽  
Thin Layers ◽  
Glass Substrates

The thin layers of ZnO and ZnO: Al (Al doped zinc oxide—AZO) were deposited by the atomic deposition layer (ALD) method on silicon and glass substrates. The structures were deposited using diethylzinc (DEZ) and deionized water as zinc and oxygen precursors. A precursor of trimethylaluminum (TMA) was used to introduce the aluminum dopant. The present study of ALD-deposited ZnO and AZO films was motivated by their applications in photovoltaics. We attempted to expose several properties of such films. Structural, optical (including ellipsometric measurements) and electrical investigations were performed. We discussed the relations between samples doped with different Al fractions and their properties.

Study on Structural Properties of Gallium and Titanium Doped Zinc Oxide Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 908 ◽  
pp. 124-128 ◽  
Author(s):  
S.B. Chen ◽  
Z.Y. Zhong
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Crystal Structures ◽  
X Ray Diffraction ◽  
Hexagonal Crystal ◽  
Working Pressure ◽  
Sintered Ceramic ◽  
Glass Substrates ◽  
Zinc Oxide Films

Thin films of transparent conducting gallium and titanium doped zinc oxide (GTZO) were prepared on glass substrates by magnetron sputtering technique using a sintered ceramic target. The microstructural properties of the deposited thin films were characterized with X-ray diffraction (XRD). The results demonstrated that the polycrystalline GTZO thin films consist of the hexagonal crystal structures with c-axis as the preferred growth orientation normal to the substrate, and that the working pressure significantly affects the crystal structures of the thin films. The GTZO thin film deposited at the working pressure of 0.4 Pa has the best crystallinity, the largest grain size and the lowest stress.

scholarly journals Structural and Optical Properties of Cobalt-Doped Zinc Oxide Thin Films Prepared By Spray Pyrolysis Technique

2010 ◽  
Vol 7 (1) ◽  
pp. 69-75
Author(s):  
Baghdad Science Journal
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Texture Coefficient ◽  
Hexagonal Structure ◽  
Structural And Optical Properties ◽  
Lattice Constants ◽  
Glass Substrates

Undoped and Co-doped zinc oxide (CZO) thin films have been prepared by spray pyrolysis technique using solution of zinc acetate and cobalt chloride. The effect of Co dopants on structural and optical properties has been investigated. The films were found to exhibit maximum transmittance (~90%) and low absorbance. The structural properties of the deposited films were examined by x-ray diffraction (XRD). These films, deposited on glass substrates at (400? C), have a polycrystalline texture with a wurtzite hexagonal structure, and the grain size was decreased with increasing Co concentration, and no change was observed in lattice constants while the optical band gap decreased from (3.18-3.02) eV for direct allowed transition. Other parameters such as Texture Coefficient (Tc), dislocation density (?) and number of crystals (M) were also calculated .

Transparent semiconductor zinc oxide thin films deposited on glass substrates by sol–gel process

2010 ◽  
Vol 36 (6) ◽  
pp. 1791-1795 ◽  
Author(s):  
Chien-Yie Tsay ◽  
Kai-Shiung Fan ◽  
Yu-Wu Wang ◽  
Chi-Jung Chang ◽  
Yung-Kuan Tseng ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Sol Gel ◽  
Oxide Thin Films ◽  
Glass Substrates ◽  
Sol Gel Process ◽  
Transparent Semiconductor

INVESTIGATING ANNEALING EFFECT ON OPTICAL PROPERTIES OF Cd0.8Zn0.2S THIN FILMS

2014 ◽  
Vol 21 (05) ◽  
pp. 1450073 ◽  
Author(s):  
SOMAYEH AZIZI ◽  
HAMID REZAGHOLIPOUR DIZAJI ◽  
MOHAMMAD HOSSEIN EHSANI ◽  
SEYED FEYZOLAH GHAVAMI MIRMAHALLE
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Hexagonal Wurtzite Structure ◽  
Band Gap Energy ◽  
Annealing Effect ◽  
Thin Layers ◽  
Optical Parameters ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Cd 0.8 Zn 0.2 S thin films deposited on glass substrates by thermal evaporation method were annealed at different temperatures for the first time in order to investigate annealing effect on optical properties. The compositional, structural of nanoparticles precursor synthesized using microwave irradiation method and optical properties of the films were studied using energy dispersive X-ray (EDX), X-ray diffraction, transmission electron microscopy (TEM), and UV-visible spectrophotometer techniques. The annealed films were found to have hexagonal Wurtzite structure with strong preferential orientation along the (002) diffraction peak. Important optical parameters such as extinction coefficient and refractive index revealed the effect of heat treatment on the deposited thin layers. A reduction in the band gap energy from 2.41 eV to 2.29 eV was observed for the annealed samples.

Electrical Properties of Indium-Doped Zinc Oxide Nanostructures Doped at Different Dopant Concentrations

2015 ◽  
Vol 1109 ◽  
pp. 593-597
Author(s):  
M.F. Nasir ◽  
Mohd Hannas ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Optical Properties ◽  
Electrical Properties ◽  
Near Infrared ◽  
Sol Gel ◽  
Zinc Oxide Nanostructures ◽  
Glass Substrates ◽  
In Doping ◽  
Coating Method

This project has been focused on the electrical and optical properties on the effect of Indium doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different In dopant concentrations at 1 at%, 1.5 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 oC. In doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-Vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% In doping concentration which is 8.27× 103Ωcm-1The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800nm) and near infrared (NIR) (>800nm) range but exhibit high absorption in the UV range.

STRUCTURAL AND OPTICAL CHARACTERIZATION OF CdS:Fe THIN FILMS PREPARED BY FLASH EVAPORATION METHOD

2012 ◽  
Vol 19 (02) ◽  
pp. 1250012 ◽  
Author(s):  
H. R. DIZAJI ◽  
M. GHASEMIAN ◽  
M. H. EHSANI
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Iron Concentration ◽  
Hexagonal Structure ◽  
Thin Layers ◽  
Flash Evaporation ◽  
Orientation Field ◽  
Absorption Data ◽  
Glass Substrates ◽  
Cds Film

CdS thin layers of 250 nm thick doped with zero, 0.1, 0.2 and 0.3 weight percents iron were deposited on glass substrates by modified flash evaporation technique in vacuum at the pressure of 5 × 10−6 mbar. The structure of the films was investigated by X-ray diffractometry. It was revealed that the films had hexagonal structure with (002) preferred orientation. Field emission scanning electron microscopy (FESEM) was employed to study the surface morphology of the prepared samples. It was found from FESEM images that the Fe -doped CdS film showed more surface uniformity. Optical absorption data of the films were used to measure the band gap of the films. It was found that the band gap of the samples decreased upon increasing the Iron concentration. Photoluminescence (PL) spectra of the CdS:Fe thin films were used to study most prominent excitation peaks within the energy range (1.6–2.6 eV). The variation in peak energy was observed upon increasing the Fe content in the films.

Piezoelectrical Properties of Plasma Layers Zn-Bi-O

2006 ◽  
Vol 9 (2) ◽  
Author(s):  
Daniel Dopierała ◽  
Jan Ziaja
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Piezoelectric Properties ◽  
Gas Pressure ◽  
Thin Layers ◽  
Technological Parameters ◽  
Reactive Gas

AbstractThe paper presents specific piezoelectric properties of thin layers of zinc oxide modified with bismuth (Zn-Bi-O). The purpose of the presented work was to find the relation between the technological parameters of receiving thin films (density power deposited on target, reactive gas pressure, distance from the substrate to the target) and the piezoelectric properties d

Comparative Study of the Properties between Transparent Conducting ZnO:Zr and ZnO:Al Films Deposited by DC Magnetron Sputtering

2011 ◽  
Vol 284-286 ◽  
pp. 2182-2186 ◽  
Author(s):  
Hua Fu Zhang ◽  
Han Fa Liu ◽  
Chang Kun Yuan
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Optical Transmittance ◽  
Dc Magnetron Sputtering ◽  
Glass Substrates ◽  
Substrate Distance ◽  
Transparent Conducting ◽  
Maximum Value ◽  
Better Than

Transparent conducting zirconium-doped zinc oxide (ZnO:Zr) and aluminium-doped zinc oxide (ZnO:Al) thin films were deposited on glass substrates by direct current (DC) magnetron sputtering at room temperature. The crystallinity of ZnO:Zr and ZnO:Al thin films increases as the target-to-substrate distance decreases, and the crystallinity of ZnO:Zr films is found to be always better than that of ZnO:Al films prepared under the same deposition conditions. As the target-to-substrate distance decreases, the resistivity of both film types decreases greatly while the optical transmittance does not change much with the variation of the distance. When target-to-substrate distance is 4.1 cm, the lowest resistivity of 6.0×10-4Ω·cm and 5.7×10-4Ω·cm was obtained for ZnO:Zr and ZnO:Al films, respectively. The figure of merit arrived at a maximum value of 3.98×10-2Ω for ZnO:Zr films lower than 5×10-2Ω for ZnO:Al films.

Sign in / Sign up

Export Citation Format

Share Document