scholarly journals Bending Strength Dependence of Fractoluminescence Intensity in Silica Glass, Single Crystal and Polycrystalline MgO

2008 ◽  
Vol 3 (5) ◽  
pp. 264-267 ◽  
Author(s):  
Tadashi Shiota ◽  
Kouichi Yasuda ◽  
Yohtaro Matsuo
Keyword(s):  
Single Crystal ◽  
Silica Glass ◽  
Bending Strength ◽  
Strength Dependence

scholarly journals Terahertz and Microwave Optical Properties of Single-Crystal Quartz and Vitreous Silica and the Behavior of the Boson Peak

2021 ◽  
Vol 11 (15) ◽  
pp. 6733
Author(s):  
Mira Naftaly ◽  
Andrew Gregory
Keyword(s):  
Single Crystal ◽  
Silica Glass ◽  
Broad Band ◽  
Peak Frequency ◽  
Vitreous Silica ◽  
Peak Height ◽  
Fused Silica ◽  
Boson Peak ◽  
Single Crystal Quartz ◽  
Crystal Quartz

Z-cut single-crystal quartz and vitreous silica (silica glass or fused silica) were evaluated for use as reference materials for terahertz and microwave measurements of complex permittivity, with Z-cut quartz confirmed as being suitable. Measurements of refractive indices and absorption coefficients for o-ray and e-ray in quartz and for vitreous silica are reported at frequencies between 0.2 and 6 THz and at 36 and 144 GHz, and compared with data reported in the literature. A previously unreported broad band was seen in the extraordinary absorption of quartz. The Boson peak in silica glass absorption was examined, and for the first time, two negative relationships have been observed: between the refractive index and the Boson peak frequency, and between the Boson peak height and its frequency.

Bending strength dependence of load-to-annual ring direction

2017 ◽  
Vol 48 (8) ◽  
pp. 773-778
Author(s):  
V. Rede ◽  
S. Essert ◽  
Z. Šokčević
Keyword(s):  
Annual Ring ◽  
Bending Strength ◽  
Strength Dependence

Abrasive-Free Polishing of Single-Crystal 4H-SiC with Silica Glass Plates

2015 ◽  
Vol 4 (12) ◽  
pp. P468-P475 ◽  
Author(s):  
Akihisa Kubota ◽  
Yuta Hatasako ◽  
Takahiro Takita ◽  
Mutsumi Touge
Keyword(s):  
Single Crystal ◽  
Silica Glass ◽  
Glass Plates

scholarly journals Effect of Electron Beam Irradiation on Bending Strength of Alkali-Free Silica Glass

2008 ◽  
Vol 72 (11) ◽  
pp. 892-896 ◽  
Author(s):  
Keisuke Takata ◽  
Keisuke Iwata ◽  
Yoshio Tyler ◽  
Akira Tonegawa ◽  
Yoshitake Nishi
Keyword(s):  
Electron Beam ◽  
Silica Glass ◽  
Electron Beam Irradiation ◽  
Bending Strength ◽  
Beam Irradiation ◽  
Free Silica

Effects of phosphorus doping on the bending strength of a single crystal silicon microbeam

2013 ◽  
Vol 8 (10) ◽  
pp. 726-730 ◽  
Author(s):  
Bin Liu ◽  
Jun Yong Tao ◽  
Yun An Zhang ◽  
Xun Chen ◽  
Xiao Jing Wang
Keyword(s):  
Single Crystal ◽  
Bending Strength ◽  
Single Crystal Silicon ◽  
Phosphorus Doping ◽  
Crystal Silicon

On the bending strength of single-crystal silicon theta-like specimens

2013 ◽  
Vol 3 (2) ◽  
pp. 113-117 ◽  
Author(s):  
Rebecca Kirkpatrick ◽  
William A. Osborn ◽  
Michael S. Gaither ◽  
Richard S. Gates ◽  
Frank W. DelRio ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bending Strength ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Image Position

Abstract

scholarly journals Effect of mechanical treatment type on the strength of undoped single crystal indium antimonide wafers

2020 ◽  
Vol 6 (4) ◽  
pp. 147-153
Author(s):  
Svetlana S. Kormilitsina ◽  
Elena V. Molodtsova ◽  
Stanislav N. Knyzev ◽  
Roman Yu. Kozlov ◽  
Dmitry A. Zavrazhin ◽  
...  
Keyword(s):  
Single Crystal ◽  
Indium Antimonide ◽  
Mechanical Treatment ◽  
Treatment Cycle ◽  
Mechanical Damage ◽  
Damage Development ◽  
Transverse Bending ◽  
General Surface ◽  
Treatment Type ◽  
Strength Dependence

Thin (100) wafers of single crystal undoped InSb have been strength tested by plane transverse bending. The strength of the wafers (≤ 800 mm in thickness) has been shown to depend on their mechanical treatment type. If the full mechanical treatment cycle is used (grinding + chemical polishing) the strength of the InSb wafers increases twofold (from 3.0 to 6.4 kg/mm2). We show that the strength dependence on mechanical treatment type for (100) wafers is similar to that for (111) wafers, the strength of (111) wafers being 2 times higher. The roughness of the thin wafers after the full mechanical treatment cycle has been measured using contact profilometry. After the full mechanical treatment cycle the roughness of the InSb wafers Ra decreases from 0.6 to 0.04 mm leading to general surface smoothening. We have compared the strength and roughness between (100) InSb and GaAs wafers. The roughness of InSb and GaAs wafers after the full mechanical treatment cycle decreases significantly: by 10 times for InSb due to the general surface smoothening and by 3 times for GaAs (Rz from 2.4 to 0.8 mm) due to a reduction of the peak roughness component. The full mechanical treatment cycle increases the strength of InSb wafers by removing damaged layers through the sequence of operations and reducing the risk of mechanical damage development.

NANO-MODIFICATION INSIDE TRANSPARENT MATERIALS BY FEMTOSECOND LASER SINGLE BEAM

2005 ◽  
Vol 19 (05) ◽  
pp. 225-238 ◽  
Author(s):  
YASUHIKO SHIMOTSUMA ◽  
KAZUYUKI HIRAO ◽  
JIARONG QIU ◽  
PETER G. KAZANSKY
Keyword(s):  
Femtosecond Laser ◽  
Single Crystal ◽  
Periodic Structure ◽  
Silica Glass ◽  
Incident Light ◽  
Polarization Direction ◽  
Low Oxygen ◽  
Tellurium Dioxide ◽  
Single Beam ◽  
Transparent Materials

Periodic nanostructures along the polarization direction of light are observed inside silica glasses and tellurium dioxide single crystal after irradiation by a focused single femtosecond laser beam. Backscattering electron images of the irradiated spot inside silica glass reveal a periodic structure of stripe-like regions of ~20 nm width with a low oxygen concentration. In the case of the tellurium dioxide single crystal, secondary electron images within the focal spot show the formation of a periodic structure of voids with ~30 nm width. Oxygen defects in a silica glass and voids in a tellurium dioxide single crystal are aligned perpendicular to the laser polarization direction. These are the smallest nanostructures below the diffraction limit of light, which are formed inside transparent materials. The phenomenon is interpreted in terms of interference between the incident light field and the electric field of electron plasma wave generated in the bulk of material.

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