Effects of phosphorus doping on the bending strength of a single crystal silicon microbeam

2013 ◽  
Vol 8 (10) ◽  
pp. 726-730 ◽  
Author(s):  
Bin Liu ◽  
Jun Yong Tao ◽  
Yun An Zhang ◽  
Xun Chen ◽  
Xiao Jing Wang
Keyword(s):  
Single Crystal ◽  
Bending Strength ◽  
Single Crystal Silicon ◽  
Phosphorus Doping ◽  
Crystal Silicon

On the bending strength of single-crystal silicon theta-like specimens

2013 ◽  
Vol 3 (2) ◽  
pp. 113-117 ◽  
Author(s):  
Rebecca Kirkpatrick ◽  
William A. Osborn ◽  
Michael S. Gaither ◽  
Richard S. Gates ◽  
Frank W. DelRio ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bending Strength ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Image Position

Abstract

Improved bending fatigue life of single crystal silicon micro-beam by phosphorus doping

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1667-1671 ◽  
Author(s):  
Jun-Yong Tao ◽  
Xiao-Jing Wang ◽  
Bin Liu ◽  
Yan-Lei Wang ◽  
Zhi-Qian Ren ◽  
...  
Keyword(s):  
Fatigue Life ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Phosphorus Doping ◽  
Crystal Silicon ◽  
Bending Fatigue

Phosphorus Doping into Silicon Using ArF Excimer Laser

1989 ◽  
Vol 158 ◽  
Author(s):  
Abdelilah Slaoui ◽  
Francois Foulon ◽  
Eric Fogarassy ◽  
Paul Siffert
Keyword(s):  
Single Crystal ◽  
Excimer Laser ◽  
Impurity Concentration ◽  
Single Crystal Silicon ◽  
Chemical Doping ◽  
Concentration Profiles ◽  
Phosphorus Doping ◽  
Crystal Silicon ◽  
Arf Excimer Laser ◽  
193 Nm

ABSTRACTChemical doping of single-crystal silicon in a PF5 atmosphere is performed byirradiation with an ArF excimer laser working at 193 nm. We have investigated the dependence of doping parameters such as the number of pulses and PF5 gas pressure on the sheet resistance and the impurity concentration profiles. From these results, it is found that phosphorus atoms are produced by pyrolysis of PF5 molecules adsorbed (chemisorbed at low pressure and physisorbed at pressure higher than 1 Torr) on thesilicon surface. As for the incorporation mechanism, it is shown that the process is external rate limited for doping in PF5 ambient whereas mainly diffusion limitedfor doping using only the chemisorbed layer.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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