On the bending strength of single-crystal silicon theta-like specimens

2013 ◽  
Vol 3 (2) ◽  
pp. 113-117 ◽  
Author(s):  
Rebecca Kirkpatrick ◽  
William A. Osborn ◽  
Michael S. Gaither ◽  
Richard S. Gates ◽  
Frank W. DelRio ◽  
...  
Keyword(s):  
Single Crystal ◽  
Bending Strength ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Image Position

Abstract

Effects of phosphorus doping on the bending strength of a single crystal silicon microbeam

2013 ◽  
Vol 8 (10) ◽  
pp. 726-730 ◽  
Author(s):  
Bin Liu ◽  
Jun Yong Tao ◽  
Yun An Zhang ◽  
Xun Chen ◽  
Xiao Jing Wang
Keyword(s):  
Single Crystal ◽  
Bending Strength ◽  
Single Crystal Silicon ◽  
Phosphorus Doping ◽  
Crystal Silicon

Deformation and fracture of single-crystal silicon theta-like specimens

2011 ◽  
Vol 26 (20) ◽  
pp. 2575-2589 ◽  
Author(s):  
Michael S. Gaither ◽  
Frank W. DelRio ◽  
Richard S. Gates ◽  
Robert F. Cook
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Deformation And Fracture ◽  
Image Position

Abstract

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Sign in / Sign up

Export Citation Format

Share Document