scholarly journals Study the effect of some parameters on the extracted ion beam from cold cathode Penning ion source

2016 ◽  
Vol 8 (8) ◽  
pp. 1-10
Author(s):  
A. Helal ◽  
H. El-Khabeary ◽  
S. Radwan
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Cold Cathode

Improvement of extracted ion beam from cold cathode Penning ion source

2018 ◽  
Vol 144 ◽  
pp. 351-355 ◽  
Author(s):  
Samah I. Radwan ◽  
H. El-Khabeary ◽  
A.G. Helal
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Cold Cathode

The Synthesis of Metal Oxide Films from Compound Powder Targets

1991 ◽  
Vol 236 ◽  
Author(s):  
A.I. Stognij ◽  
V.V. Tokarev ◽  
Yu.N. Mitin
Keyword(s):  
Metal Oxide ◽  
Ion Beam ◽  
Oxide Films ◽  
Ion Source ◽  
Cold Cathode ◽  
Metal Oxide Films ◽  
Oxygen Ion ◽  
Microscopy Investigation ◽  
Electron Microscopy Investigation ◽  
Cold Cathode Ion Source

AbstractThe paper presents the results of AES, SIMS, RBS and electron microscopy investigation of compound metal oxide films. The films were deposited by sputtering compound targets with oxygen ion beam, extracted from hollow cold cathode ion source.

Hollow Cold Cathode Ion Source for Reactive Ion-Beam Etching

1989 ◽  
Vol 158 ◽  
Author(s):  
A.I. Stognij ◽  
V.V. Tokarev
Keyword(s):  
Ion Beam ◽  
High Vacuum ◽  
Ion Source ◽  
Operating Parameters ◽  
Cold Cathode ◽  
Plasma Emitter ◽  
Ion Beam Etching ◽  
Pressure Discharge ◽  
Reactive Gas ◽  
Cold Cathode Ion Source

ABSTRACTA wide-aperture reactive gas ion source has been developed for various ion-beam processings in high vacuum (p < < 5×10−2 Pa). The peculiar feature of the ion source is that two-stage self-maintained low-pressure discharge is used here as a plasma emitter. This provides high operating parameters of the source along with simple diode-type structure.

Investigations of diamond-like carbon films produced directly from an ion beam of industrial ion source with a cold cathode

1997 ◽  
Vol 46 (1-3) ◽  
pp. 137-140 ◽  
Author(s):  
K.L. Enisherlova ◽  
Yu.A. Kontsevoi ◽  
E.N. Chervyakova ◽  
E.A. Mitrofanov ◽  
Yu.P. Maishev
Keyword(s):  
Ion Beam ◽  
Carbon Films ◽  
Ion Source ◽  
Diamond Like Carbon ◽  
Cold Cathode

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

Optimizing Gas-Assisted Processes for Ga and Xe FIB Circuit Edit Application

2016 ◽  
Author(s):  
Valery Ray ◽  
Josef V. Oboňa ◽  
Sharang Sharang ◽  
Lolita Rotkina ◽  
Eddie Chang ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Structural Damage ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Width ◽  
Ion Source ◽  
Reconstruction Technique ◽  
Beam Diameter ◽  
Current Profile ◽  
Single Beam

Abstract Despite commercial availability of a number of gas-enhanced chemical etches for faster removal of the material, there is still lack of understanding about how to take into account ion implantation and the structural damage by the primary ion beam during focused ion beam gas-assisted etching (FIB GAE). This paper describes the attempt to apply simplified beam reconstruction technique to characterize FIB GAE within single beam width and to evaluate the parameters critical for editing features with the dimensions close to the effective ion beam diameter. The approach is based on reverse-simulation methodology of ion beam current profile reconstruction. Enhancement of silicon dioxide etching with xenon difluoride precursor in xenon FIB with inductively coupled plasma ion source appears to be high and relatively uniform over the cross-section of the xenon beam, making xenon FIB potentially suitable platform for selective removal of materials in circuit edit application.

Characteristics of extracted ion beam from a cesium-free negative ion source using sheet plasma

2020 ◽  
Vol 91 (11) ◽  
pp. 113302
Author(s):  
H. Kaminaga ◽  
T. Takimoto ◽  
A. Tonegawa ◽  
K. N. Sato
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Negative Ion ◽  
Sheet Plasma
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