A Hybrid Multi-gate Model of a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) Device Incorporating GaN-substrate Thermal Boundary Resistance

2012 ◽  
Author(s):  
Horacio C. Nochetto ◽  
Nicholas R. Jankowski ◽  
Brian Morgan ◽  
Avram Bar-Cohen
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Boundary Resistance ◽  
Thermal Boundary Resistance ◽  
High Electron ◽  
High Electron Mobility

scholarly journals Design and fabrication of high electron mobility transistor devices with gallium nitride-based

2017 ◽  
Vol 66 (24) ◽  
pp. 247203
Author(s):  
Zhu Yan-Xu ◽  
Song Hui-Hui ◽  
Wang Yue-Hua ◽  
Li Lai-Long ◽  
Shi Dong
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility

Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications

Radio Science ◽  
2019 ◽  
Vol 54 (12) ◽  
pp. 1172-1180
Author(s):  
R. K. Kaneriya ◽  
Gunjan Rastogi ◽  
P. K. Basu ◽  
R. B. Upadhyay ◽  
A. N. Bhattacharya
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Device Modeling ◽  
High Electron ◽  
High Electron Mobility ◽  
Terahertz Applications
Sign in / Sign up

Export Citation Format

Share Document