Improvement in electrostatic discharge robustness of a gallium‐nitride‐based flip‐chip high‐electron mobility transistor with a metal–insulator–metal capacitor structure

2019 ◽  
Vol 14 (7) ◽  
pp. 1091-1094
Author(s):  
Nan‐Hung Cheng ◽  
Yung‐Fang Chen ◽  
Liann‐Be Chang ◽  
Ping‐Yu Kuei ◽  
Yi‐Cherng Ferng ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
Flip Chip ◽  
Electrostatic Discharge ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Metal ◽  
Capacitor Structure

Recessed-Gate GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistor Using a Dual Gate-Insulator Employing TiO2/SiN

2020 ◽  
Vol 20 (8) ◽  
pp. 4678-4683
Author(s):  
Jun Hyeok Jung ◽  
Min Su Cho ◽  
Won Douk Jang ◽  
Sang Ho Lee ◽  
Jaewon Jang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Gate Insulator ◽  
High Electron ◽  
Insulator Layer ◽  
Metal Insulator ◽  
High Electron Mobility ◽  
Metal Insulator Semiconductor ◽  
Dual Gate ◽  
Recessed Gate

In this work, we present a normally-off recessed-gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) using a TiO2/SiN dual gate-insulator. We analyzed the electrical characteristics of the proposed device and found that the dual gate-insulator device achieves higher on-state currents than the device using a SiN gate-insulator because the high-k insulator layer of the dual gate-insulator improves the gate-controllability. The device using a TiO2/SiN gate-insulator shows better gate leakage current characteristics than the device with only TiO2 gate-insulator because of the high quality SiN gate-insulator. Therefore, the device using a dual gate-insulator can overcome disadvantages of a device using only TiO2 gate-insulator. To better predict the power consumption and the switching speed, we simulated the specific on-resistance (Ron, sp) according to the gate-to-drain distance (LGD) using the two-dimensional ATLAS simulator. The proposed device exhibits a threshold voltage of 2.3 V, a maximum drain current of 556 mA/mm, a low Ron, sp of 1.45 mΩ·cm2, and a breakdown voltage of 631 V at an off-state current of 1 μA/mm with VGS = 0 V. We have confirmed that a normally-off recessed-gate AlGaN/GaN MIS-HEMT using a TiO2/SiN dual gate-insulator is a promising candidate for power electronic applications.

V-Band Flip-Chip Assembled Gain Block Using In$_{0.6}$Ga$_{0.4}$As Metamorphic High-Electron-Mobility Transistor Technology

2011 ◽  
Vol 4 (10) ◽  
pp. 104105 ◽  
Author(s):  
Che-Yang Chiang ◽  
Heng-Tung Hsu ◽  
Chin-Te Wang ◽  
Chien-I Kuo ◽  
Heng-Shou Hsu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Flip Chip ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
V Band
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