Design and fabrication of high electron mobility transistor devices with gallium nitride-based

Zhu Yan-Xu;  Song Hui-Hui;  Wang Yue-Hua;  Li Lai-Long;  Shi Dong

doi:10.7498/aps.66.247203

Design and fabrication of high electron mobility transistor devices with gallium nitride-based

Acta Physica Sinica ◽

10.7498/aps.66.247203 ◽

2017 ◽

Vol 66 (24) ◽

pp. 247203

Author(s):

Zhu Yan-Xu ◽

Song Hui-Hui ◽

Wang Yue-Hua ◽

Li Lai-Long ◽

Shi Dong

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility

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Iron-Induced Acceptor Centers in the Gallium Nitride High Electron Mobility Transistor: Thermal Simulation and Analysis

2019 International Conference on Advanced Technologies for Communications (ATC) ◽

10.1109/atc.2019.8924506 ◽

2019 ◽

Cited By ~ 1

Author(s):

Dao Dinh Ha ◽

Trung Tran Tuan ◽

Vladislav Volcheck ◽

Viktor Stempitsky

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Thermal Simulation ◽

High Electron ◽

High Electron Mobility

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Aluminum Gallium Nitride (GaN)/GaN High Electron Mobility Transistor-Based Sensors for Glucose Detection in Exhaled Breath Condensate

Journal of Diabetes Science and Technology ◽

10.1177/193229681000400122 ◽

2010 ◽

Vol 4 (1) ◽

pp. 171-179 ◽

Cited By ~ 24

Author(s):

Byung Hwan Chu ◽

Byoung Sam Kang ◽

Sheng Chun Hung ◽

Ke Hung Chen ◽

Fan Ren ◽

...

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

Aluminum Gallium Nitride ◽

Exhaled Breath Condensate ◽

High Electron Mobility Transistor ◽

Glucose Detection ◽

Exhaled Breath ◽

High Electron ◽

High Electron Mobility ◽

Breath Condensate

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Ferroelectric Polarization Switching Behavior of Hf 0.5 Zr 0.5 O 2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures

physica status solidi (a) ◽

10.1002/pssa.201900717 ◽

2019 ◽

Vol 217 (7) ◽

pp. 1900717

Author(s):

Chunlei Wu ◽

Hansheng Ye ◽

Benjamin Grisafe ◽

Suman Datta ◽

Patrick Fay

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

Gate Dielectrics ◽

High Electron Mobility Transistor ◽

Polarization Switching ◽

Switching Behavior ◽

Ferroelectric Polarization ◽

High Electron ◽

High Electron Mobility

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Proton irradiation effects on buffer-free gallium nitride on silicon carbide high electron mobility transistor-based radio frequency power amplifier

Semiconductor Science and Technology ◽

10.1088/1361-6641/abe2df ◽

2021 ◽

Vol 36 (4) ◽

pp. 045019

Author(s):

Samriddhi Raut ◽

Khushwant Sehra ◽

Meena Mishra ◽

D S Rawal ◽

Mridula Gupta ◽

...

Keyword(s):

Silicon Carbide ◽

Gallium Nitride ◽

Power Amplifier ◽

Electron Mobility ◽

Proton Irradiation ◽

High Electron Mobility Transistor ◽

High Electron ◽

Irradiation Effects ◽

High Electron Mobility ◽

Frequency Power

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Simulation and implementation of a two‐mode‐operation transconductance regulator with a Gallium Nitride High‐Electron‐Mobility Transistor

International Journal of Circuit Theory and Applications ◽

10.1002/cta.3141 ◽

2021 ◽

Author(s):

Kai‐Jun Pai ◽

Chang‐Hua Lin

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Mode Operation

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Eighty nine‐watt cascaded multistage power amplifier using gallium nitride‐on‐silicon high electron mobility transistor for L‐band radar applications

IET Circuits Devices & Systems ◽

10.1049/cds2.12075 ◽

2021 ◽

Author(s):

Khizar Hayat ◽

Salahuddin Zafar ◽

Tariq Mehmood ◽

Busra Cankaya Akoglu ◽

Ekmel Ozbay ◽

...

Keyword(s):

Gallium Nitride ◽

Power Amplifier ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

High Electron Mobility ◽

Radar Applications ◽

L Band

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A 50 W dual‐band high‐efficiency gallium nitride high electron mobility transistor power amplifier with three‐stage L‐type DC bias circuit at 1.8 and 2.6 GHz

Microwave and Optical Technology Letters ◽

10.1002/mop.33028 ◽

2021 ◽

Author(s):

Jong‐Heon Kim ◽

Dong‐Ki Jeong ◽

Ji‐Yeon Kim ◽

Young‐Rak Choi

Keyword(s):

Gallium Nitride ◽

Power Amplifier ◽

Electron Mobility ◽

High Efficiency ◽

High Electron Mobility Transistor ◽

Dual Band ◽

High Electron ◽

High Electron Mobility ◽

Dc Bias

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Improvement in electrostatic discharge robustness of a gallium‐nitride‐based flip‐chip high‐electron mobility transistor with a metal–insulator–metal capacitor structure

IEEJ Transactions on Electrical and Electronic Engineering ◽

10.1002/tee.22904 ◽

2019 ◽

Vol 14 (7) ◽

pp. 1091-1094

Author(s):

Nan‐Hung Cheng ◽

Yung‐Fang Chen ◽

Liann‐Be Chang ◽

Ping‐Yu Kuei ◽

Yi‐Cherng Ferng ◽

...

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

Flip Chip ◽

Electrostatic Discharge ◽

High Electron Mobility Transistor ◽

High Electron ◽

Metal Insulator ◽

High Electron Mobility ◽

Metal Insulator Metal ◽

Capacitor Structure

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Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications

Radio Science ◽

10.1029/2019rs006844 ◽

2019 ◽

Vol 54 (12) ◽

pp. 1172-1180

Author(s):

R. K. Kaneriya ◽

Gunjan Rastogi ◽

P. K. Basu ◽

R. B. Upadhyay ◽

A. N. Bhattacharya

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

Device Modeling ◽

High Electron ◽

High Electron Mobility ◽

Terahertz Applications

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Impact of E‐Mode Gallium Nitride High Electron Mobility Transistor with P‐Type Gate on Waveform Distortion in an AirFuel Wireless Power Transfer System

physica status solidi (a) ◽

10.1002/pssa.202170016 ◽

2021 ◽

Vol 218 (3) ◽

pp. 2170016

Author(s):

Shaoyu Sun ◽

Jianshan Zhang ◽

Ling Xia ◽

Wengang Wu ◽

Jinyan Wang ◽

...

Keyword(s):

Gallium Nitride ◽

Electron Mobility ◽

High Electron Mobility Transistor ◽

High Electron ◽

Transfer System ◽

Wireless Power ◽

High Electron Mobility ◽

Waveform Distortion ◽

Wireless Power Transfer System ◽

P Type

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