Intersubband Device Modeling of Gallium Nitride High Electron Mobility Transistor for Terahertz Applications

Radio Science ◽  
2019 ◽  
Vol 54 (12) ◽  
pp. 1172-1180
Author(s):  
R. K. Kaneriya ◽  
Gunjan Rastogi ◽  
P. K. Basu ◽  
R. B. Upadhyay ◽  
A. N. Bhattacharya
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Device Modeling ◽  
High Electron ◽  
High Electron Mobility ◽  
Terahertz Applications

scholarly journals Design and fabrication of high electron mobility transistor devices with gallium nitride-based

2017 ◽  
Vol 66 (24) ◽  
pp. 247203
Author(s):  
Zhu Yan-Xu ◽  
Song Hui-Hui ◽  
Wang Yue-Hua ◽  
Li Lai-Long ◽  
Shi Dong
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility
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