A 50 W dual‐band high‐efficiency gallium nitride high electron mobility transistor power amplifier with three‐stage L‐type DC bias circuit at 1.8 and 2.6  GHz

2021 ◽  
Author(s):  
Jong‐Heon Kim ◽  
Dong‐Ki Jeong ◽  
Ji‐Yeon Kim ◽  
Young‐Rak Choi
Keyword(s):  
Gallium Nitride ◽  
Power Amplifier ◽  
Electron Mobility ◽  
High Efficiency ◽  
High Electron Mobility Transistor ◽  
Dual Band ◽  
High Electron ◽  
High Electron Mobility ◽  
Dc Bias

scholarly journals Design of a High-Efficiency GaN High-Electron Mobility Transistor Microwave Power Amplifier

2020 ◽  
Vol 30.8 (147) ◽  
pp. 46-50
Author(s):  
Duy Manh Luong ◽  
◽  
Huy Hoang Nguyen
Keyword(s):  
Power Amplifier ◽  
Microwave Power ◽  
Electron Mobility ◽  
High Efficiency ◽  
High Electron Mobility Transistor ◽  
Satellite Communications ◽  
High Electron ◽  
High Electron Mobility ◽  
Power Added Efficiency ◽  
Microwave Power Amplifier

This study presents a design procedure to obtain high-efficiency for microwave power amplifier. The designed amplifier uses a GaN high electron mobility transistor as an active device. Matching networks including input and output networks are realized using Megtron6 substrate microstrip lines. The designed amplifier operates at 2.1 GHz band. The simulated results show that the amplifier delivers a maximum power-added efficiency of 73.2% at output power and power gain of 47.8 dBm and 13.8 dB, respectively. This promising designed performance makes this amplifier to be an excellent candidate for use in modern wireless communication systems like radar, mobile network, and satellite communications.

scholarly journals Dual-band doherty power amplifier with improved reactance compensation

2021 ◽  
Vol 23 (3) ◽  
pp. 1550
Author(s):  
Li M. Yu ◽  
Narendra K. Aridas ◽  
Tarik A. Latef
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Dual Band ◽  
High Electron ◽  
High Electron Mobility ◽  
Term Evolution ◽  
Doherty Power Amplifier

In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the efficiency at the back-off point from saturation output power for selected dual frequencies in the LTE bandwidth. Measurements show that the prototype board has enhanced performance at the desired frequencies, namely a saturation output power of 40.5 dBm, and 6 dB back-off efficiencies of 43% and 47%, which exhibit a gain of approximately 10 dB at 0.8 GHz and 2.1 GHz, respectively.

scholarly journals Design and fabrication of high electron mobility transistor devices with gallium nitride-based

2017 ◽  
Vol 66 (24) ◽  
pp. 247203
Author(s):  
Zhu Yan-Xu ◽  
Song Hui-Hui ◽  
Wang Yue-Hua ◽  
Li Lai-Long ◽  
Shi Dong
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility
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