Residual Stress and Fracture of PECVD Thick Oxide Films for Power MEMS Structures and Devices

2007 ◽  
Author(s):  
Xin Zhang
Keyword(s):  
Residual Stress ◽  
Oxide Films ◽  
Power Mems

Processing of Thick Dielectric Films for Power MEMS: Stress and Fracture

2000 ◽  
Vol 657 ◽  
Author(s):  
Kuo-Shen Chen ◽  
Xin Zhang ◽  
S. Mark Spearing
Keyword(s):  
Residual Stress ◽  
Oxide Films ◽  
Intrinsic Stress ◽  
Dielectric Films ◽  
Mixed Mode Fracture ◽  
Strong Function ◽  
Deformation And Fracture ◽  
Power Mems ◽  
Theoretical Predictions ◽  
Critical Cracking Temperature

ABSTRACTThis paper presents residual stress characterization and fracture analysis of thick silane based PECVD oxide films. The motivation for this work is to elucidate the factors contributing to residual stress, deformation and fracture of oxide films so as to refine the fabrication process for power MEMS. It is shown that residual stress in oxide films strongly depended on thermal processing history. Dissolved gases were found to play an important role in governing intrinsic stress. The tendency to form cracks is a strong function of film thickness and annealing temperature. Mixed mode fracture mechanics was applied to predict critical cracking temperature, and there is a fairly good match between theoretical predictions and experimental observations.

Thermo-mechanical behavior of thick PECVD oxide films for power MEMS applications

2003 ◽  
Vol 103 (1-2) ◽  
pp. 263-270 ◽  
Author(s):  
Xin Zhang ◽  
Kuo-Shen Chen ◽  
S. Mark Spearing
Keyword(s):  
Mechanical Behavior ◽  
Oxide Films ◽  
Power Mems

Residual stress distribution in oxide films formed on Zircaloy-2

2015 ◽  
Vol 466 ◽  
pp. 658-665 ◽  
Author(s):  
T. Sawabe ◽  
T. Sonoda ◽  
M. Furuya ◽  
S. Kitajima ◽  
H. Takano
Keyword(s):  
Residual Stress ◽  
Stress Distribution ◽  
Oxide Films ◽  
Residual Stress Distribution

The Effect of Film Stress on Indentation Modulus/Hardness for Silicon Oxide Films

1999 ◽  
Vol 563 ◽  
Author(s):  
Brad Sun ◽  
Jin Lee ◽  
Patrick Kofron ◽  
Qing Ma
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Elevated Temperatures ◽  
Silicon Oxide ◽  
Oxide Films ◽  
Sio2 Film ◽  
Indentation Modulus ◽  
Rf Power ◽  
Appreciable Change ◽  
Steel Substrates

AbstractA controlled experiment was performed to determine whether residual stresses in silicon oxide films affect the apparent modulus and hardness of the films measured using microindentation. A set of wafers, each with a SiO2 film of different residual stress, were produced by PECVD deposition using different RF power settings. Residual stresses, determined by curvature measurement, were shown to become more compressive with the increase of the RF power. Correlation between indentation modulus/hardness and residual stress was established because the modulus was also observed to be trending with the RF power. To determine whether the residual stress change is the cause for the change of indentation modulus/hardness, one of the wafers was cut to pieces and bonded to steel substrates of different thickness at elevated temperatures. Because of the thermal mismatch between silicon and steel, the silicon pieces were stressed by the steel substrates and therefore provided additional stresses to the SiO2 film on the top surface. The applied stresses were determined using Raman piezospectroscopy. Micro-indentation tests performed on these samples showed no appreciable change of modulus/hardness due to additional stresses. It was concluded that the material change, such as density, was behind the correlation between indentation modulus and residual stress.

scholarly journals Residual Stress Mechanisms in Aluminium Oxide Films Grown by MOCVD

2019 ◽  
Vol 25 (8) ◽  
pp. 1309-1315 ◽  
Author(s):  
Sumit Soni ◽  
Diane Samelor ◽  
Brian W. Sheldon ◽  
Constantin Vahlas ◽  
Alain N. Gleizes
Keyword(s):  
Residual Stress ◽  
Oxide Films ◽  
Aluminium Oxide

scholarly journals Residual Stress in CVD-grown 3C-SiC Films on Si Substrates

2008 ◽  
Vol 1069 ◽  
Author(s):  
Alex A. Volinsky ◽  
Grygoriy Kravchenko ◽  
Patrick Waters ◽  
Jayadeep Deva Reddy ◽  
Chris Locke ◽  
...  
Keyword(s):  
Residual Stress ◽  
Lattice Parameter ◽  
Growth Direction ◽  
Mems Devices ◽  
Si Substrates ◽  
Power Mems ◽  
Crystalline Films ◽  
Superior Mechanical Properties ◽  
Sic Films ◽  
Si Wafer

ABSTRACTHaving superior mechanical properties, 3C-SiC is one of the target materials for power MEMS applications. Growing 3C-SiC films on Si is challenging, as there is a large mismatch in lattice parameter and thermal expansion between the SiC film and the Si substrate that needs to be accommodated, and results in high residual stress. Residual stress control is critical in MEMS devices as upon feature release it results in substantial deformation.3C-SiC single crystalline films were deposited on 50 mm (100) and (111) Si substrates in a hot-wall CVD reactor. The film tensile residual stress was so high that it fractured on the (111) Si wafer. The resulting film thickness on the (100) Si wafer was non-uniform, having a linear profile along the growth direction. This presented a challenge of using the substrate curvature method for calculating residual stress. Finite Element Method correction was applied to the Stoney's formula for calculating the residual stress along the wafer radius. Suggestions for reducing the amount of residual stress are made.

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