Cu–Zr Thin Film Electrodeposited from an Aqueous Solution Using Rectangular Pulse Current Over a Megahertz Frequency Range

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

Download Full-text

A facile room temperature chemical transformation approach for binder-free thin film formation of Ag2Te and lithiation/delithiation chemistry of the film

Dalton Transactions ◽

10.1039/c6dt03038f ◽

2016 ◽

Vol 45 (43) ◽

pp. 17312-17318 ◽

Cited By ~ 9

Author(s):

Eun-Kyung Kim ◽

Dasom Park ◽

Nabeen K. Shrestha ◽

Jinho Chang ◽

Cheol-Woo Yi ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Aqueous Solution ◽

Ion Exchange ◽

Chemical Transformation ◽

Room Temperature ◽

Film Formation ◽

Synthetic Method ◽

Binder Free ◽

Thin Film Formation

An aqueous solution based synthetic method for binder-free Ag2Te thin films using ion exchange induced chemical transformation of Ag/AgxO thin films.

Download Full-text

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.512-515.1736 ◽

2012 ◽

Vol 512-515 ◽

pp. 1736-1739

Author(s):

Li Li Zhang ◽

Guo Qiang Tan ◽

Meng Cheng ◽

Hui Jun Ren ◽

Ao Xia

Keyword(s):

Thin Film ◽

Thin Films ◽

Dielectric Property ◽

Annealing Temperature ◽

Raw Materials ◽

Sol Gel ◽

Frequency Range ◽

Annealing Temperatures ◽

Pure Phase ◽

Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

Download Full-text

Lanthanum Aluminum Oxide Thin-Film Dielectrics from Aqueous Solution

ACS Applied Materials & Interfaces ◽

10.1021/am507271e ◽

2015 ◽

Vol 7 (3) ◽

pp. 1678-1684 ◽

Cited By ~ 49

Author(s):

Paul N. Plassmeyer ◽

Kevin Archila ◽

John F. Wager ◽

Catherine J. Page

Keyword(s):

Thin Film ◽

Aqueous Solution ◽

Aluminum Oxide ◽

Oxide Thin Film ◽

Lanthanum Aluminum Oxide ◽

Thin Film Dielectrics

Download Full-text

Tunable high-κ ZrxAl1−xOy thin film dielectrics from all-inorganic aqueous precursor solutions

RSC Advances ◽

10.1039/c7ra08362a ◽

2017 ◽

Vol 7 (62) ◽

pp. 39147-39152 ◽

Cited By ~ 5

Author(s):

K. N. Woods ◽

E. C. Waddington ◽

C. A. Crump ◽

E. A. Bryan ◽

T. S. Gleckler ◽

...

Keyword(s):

Thin Film ◽

Aqueous Solution ◽

Dielectric Properties ◽

Aluminum Oxide ◽

Oxide Thin Film ◽

Solution Route ◽

Thin Film Dielectrics ◽

Film Dielectric ◽

Inorganic Aqueous Solution

An all-inorganic, aqueous solution route enables facile control of composition and optimization of zirconium aluminum oxide thin film dielectric properties.

Download Full-text