scholarly journals Periodic Change in the Ni Content in a Co-Ni Thin Film Electrodeposited Using a Rectangular Pulse Current over a Megahertz Frequency Range

2018 ◽  
pp. 305-314
Author(s):  
M Saitou ◽  
Keyword(s):  
Thin Film ◽  
Pulse Current ◽  
Rectangular Pulse ◽  
Periodic Change ◽  
Frequency Range ◽  
Ni Content

Multiple Quantum Barrier Nano-avalanche Photodiodes - Part III: Time and Frequency Responses

2019 ◽  
Vol 9 (2) ◽  
pp. 192-197
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya
Keyword(s):  
Optical Pulse ◽  
Pulse Current ◽  
Avalanche Photodiodes ◽  
Simulation Method ◽  
Rectangular Pulse ◽  
Operating Conditions ◽  
Multiple Quantum ◽  
Material System ◽  
Frequency Responses ◽  
The Fourier Transform

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.

Effects of Annealing Temperature on Morphology and Dielectric Property of BiFeO3 Films

2012 ◽  
Vol 512-515 ◽  
pp. 1736-1739
Author(s):  
Li Li Zhang ◽  
Guo Qiang Tan ◽  
Meng Cheng ◽  
Hui Jun Ren ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Property ◽  
Annealing Temperature ◽  
Raw Materials ◽  
Sol Gel ◽  
Frequency Range ◽  
Annealing Temperatures ◽  
Pure Phase ◽  
Lower Loss

Fe(NO3)3•9H2O and Bi(NO3)3•5H2O were used as raw materials. BiFeO3 thin films were prepared by sol-gel method. The effects of annealing temperatures on the morphology and dielectric property of the thin films were studied. XRD results show that the multi-crystal thin films with pure phase are obtained when annealed at 500°C and 550°C. But annealing at 580°C will lead to the appearance of Bi2.46Fe5O12 phase.AFM images show that as the increase of annealing temperatures the surface toughness of the thin film is decreased, but the surface undulation of the thin films is decreased gradually. Within the frequency range of 1KHz~1MHz, the dielectric constant of BiFeO3 thin films is kept over 125 and it does not change very much from 500°C to 580°C. Annealed at 550°C, the BiFeO3 thin films with the lower loss are obtained. At 1MHz, the dielectric loss is 0.12.

scholarly journals Continuously tuning the impedance matching at the broadband terahertz frequency range in VO2 thin film

2018 ◽  
Vol 9 (1) ◽  
pp. 315 ◽  
Author(s):  
Hong-fu Zhu ◽  
Jiang Li ◽  
Sen-cheng Zhong ◽  
Liang-hui Du ◽  
Qi-wu Shi ◽  
...  
Keyword(s):  
Thin Film ◽  
Impedance Matching ◽  
Terahertz Frequency ◽  
Frequency Range ◽  
Terahertz Frequency Range ◽  
Broadband Terahertz

Use of mass loading to operate a thin film ultrasonic transducer in the 300 kHz–10 MHz frequency range

2011 ◽  
Vol 27 (1) ◽  
pp. 29-32 ◽  
Author(s):  
Katherine J. Kirk ◽  
Jocelyn Elgoyhen ◽  
John Paul Hood ◽  
David Hutson
Keyword(s):  
Thin Film ◽  
Ultrasonic Transducer ◽  
Mass Loading ◽  
Frequency Range
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