scholarly journals Aluminium in a Cu-Mo-Al Thin Film Generated Resonantly in an Aqueous Solution using a Megahertz Rectangular Pulse Current Electrodeposition Technique

Author(s):  
M Saitou ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 192-197
Author(s):  
Somrita Ghosh ◽  
Aritra Acharyya

Background: The time and frequency responses of Multiple Quantum Barrier (MQB) nano-scale Avalanche Photodiodes (APDs) based on Si~3C-SiC material system have been investigated in this final part. Methods: A very narrow rectangular pulse of pulse-width of 0.4 ps has been used as the input optical pulse having 850 nm wavelength incidents on the p+-side of the MQB APD structures and corresponding current responses have been calculated by using a simulation method developed by the authors. Results: Finally the frequency responses of the devices are obtained via the Fourier transform of the corresponding pulse current responses in time domain. Conclusion: Simulation results show that MQB nano-APDs possess significantly faster time response and wider frequency response as compared to the flat Si nano-APDs under similar operating conditions.


2007 ◽  
Vol 62 (12) ◽  
pp. 761-768
Author(s):  
Chao-Chen Yang ◽  
Min-Fong Shu

We have utilized ZnCl2-dimethylsulfone (DMSO2) as the electrolyte with added GdCl3, FeCl2, and CoCl2, for electrodepositing a perpendicular GdFeCo magnetic thin film. The reaction at the electrode surface and the electrical conductivity of the ionic substance at different ionic concentrations were studied by cyclic voltammetry and a computerized direct current method. Moreover, the electrodeposition of the GdFeCo thin film was determined by a pulse potential method. Relation between the composition of the deposited thin film and control parameters including applied potentials was determined by EDS analysis. An amorphous structure and the thickness of the thin film were obtained by TEM analysis. Its roughness and uniformity were determined by AFM analysis. Meanwhile, a perpendicular magnetic property and pinning magnetic domain of the thin film were analyzed from results of AGM and MFM.


1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.


2016 ◽  
Vol 45 (43) ◽  
pp. 17312-17318 ◽  
Author(s):  
Eun-Kyung Kim ◽  
Dasom Park ◽  
Nabeen K. Shrestha ◽  
Jinho Chang ◽  
Cheol-Woo Yi ◽  
...  

An aqueous solution based synthetic method for binder-free Ag2Te thin films using ion exchange induced chemical transformation of Ag/AgxO thin films.


1980 ◽  
Vol 51 (9) ◽  
pp. 4808-4812 ◽  
Author(s):  
A. Wagendristel ◽  
H. Schurz ◽  
E. Ehrmann‐Falkenau ◽  
H. Bangert

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