An x‐ray optical study of layered phase growth in Au‐Al thin film couples

1980 ◽  
Vol 51 (9) ◽  
pp. 4808-4812 ◽  
Author(s):  
A. Wagendristel ◽  
H. Schurz ◽  
E. Ehrmann‐Falkenau ◽  
H. Bangert
Keyword(s):  
Thin Film ◽  
Optical Study ◽  
Phase Growth ◽  
X Ray ◽  
Al Thin Film

An X-ray optical study of layered phase in Au−Al thin film couples

1980 ◽  
Vol 49 (1-3) ◽  
pp. 233-233
Author(s):  
A. Wagendristel ◽  
H. Schurz ◽  
H. Bangert ◽  
E. Ehrmann-Falkenau
Keyword(s):  
Thin Film ◽  
Optical Study ◽  
X Ray ◽  
Al Thin Film

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

Formation of Intermetallics and Grain Boundary Diffusion in Cu-Al and Au-Al Thin Film Couples

1981 ◽  
Vol 10 ◽  
Author(s):  
J. M. Vandenberg ◽  
F. J. A. Den Broeder ◽  
R. A. Hamm
Keyword(s):  
Thin Film ◽  
Hexagonal Phase ◽  
Interface Reaction ◽  
Aluminum Film ◽  
Temperature Dependent ◽  
X Ray ◽  
Wide Range ◽  
Al Thin Film ◽  
Rich Side

An in situ annealing X-ray study was applied to Cu-Al thin film couples over a wide range of copper-to-aluminum film ratios. This new technique, which has been previously described for a study on the Au-Al thin film system, enables us to make a temperature-dependent photographic X-ray analysis. The present study indicated that only a limited number of the wide variety of bulk phases form in the Cu-Al thin film interface, while some of these phases in the interface are transient. In the transient stages of the interface reaction, the f.c.c.-ordered phase β-Cu3A1 grows over the entire range of copper-to-aluminum film ratios after the first nucleation of CuA12, indicating a two-step nucleation reaction. On the aluminum-rich side, this phase transforms to a new ordered hexagonal phase β′. It could be interpreted as a superlattice of the metastable hexagonal ω phase occurring in zirconium-based alloys. The end phases are CuA1 and CuAl2.

Chemical deterioration of Al film prepared on CF4 plasma-etched LiNbO3 surface

2000 ◽  
Vol 15 (2) ◽  
pp. 476-482 ◽  
Author(s):  
Hirotoshi Nagata ◽  
Yasuyuki Miyama ◽  
Naoki Mitsugi ◽  
Kaori Shima
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Buffer Layer ◽  
Amorphous Phase ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Transmission Electron ◽  
Optical Polarizer ◽  
Al Thin Film

The fabrication process of an Al thin-film optical polarizer on LiNbO3 waveguides after CF4 plasma dry etching of a previously deposited SiO2 buffer layer was investigated. The problem in this process is a precipitation of compounds containing C, O, F, and Li on the etched LiNbO3 surface and a chemical deterioration of the Al caused by a reaction with these precipitates. Most notably, the growth of amorphous phase in addition to the crystalline Al metal grains and a partial oxidization of Al were found at the interface using transmission electron microscopy and x-ray photoelectron spectroscopy.

Diffusional alloying in polycrystalline AgAl thin film couples studied by means of Kiessig X-ray interference

1979 ◽  
Vol 86 ◽  
pp. 68-74 ◽  
Author(s):  
A. Wagendristel ◽  
H. Bangert ◽  
W. Tonsern
Keyword(s):  
Thin Film ◽  
X Ray ◽  
Al Thin Film

High-temperature interfacial reaction of an Al thin film with single-crystal 6H–SiC

2000 ◽  
Vol 15 (11) ◽  
pp. 2284-2287 ◽  
Author(s):  
Byung-Teak Lee ◽  
Yang-Soo Shin ◽  
Jin Hyeok Kim
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Layer Structure ◽  
Compound Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Double Layer Structure ◽  
Transmission Electron ◽  
Al Thin Film

Interfacial reactions between an Al thin film and a single-crystal (001) 6H–SiC substrate were investigated using x-ray diffraction and cross-sectional transmission electron microscopy. Aluminum thin films were prepared by radio-frequency magnetron sputtering method on 6H–SiC substrates at room temperature and then annealed at various temperatures from 500 to 900 °C. A columnar-type polycrystalline Al thin film was formed on a 6H–SiC substrate in the as-deposited sample. No remarkable microstructural change, compared to the as-deposited sample, was observed in the sample annealed at 500 °C for 1 h. However, it was found that the Al layer reacted with the SiC substrate at 700 °C and formed an Al–Si–C ternary compound at the Al/SiC interface. Samples annealed at 900 °C showed a double-layer structure with an Al–Si mixed surface layer and an Al–Si–C compound layer below in contact with the substrate.

An in situ X-ray study of phase formation in CuAl thin film couples

1982 ◽  
Vol 97 (4) ◽  
pp. 313-323 ◽  
Author(s):  
J.M. Vandenberg ◽  
R.A. Hamm
Keyword(s):  
Thin Film ◽  
Phase Formation ◽  
X Ray ◽  
Al Thin Film

Kinetics of Phase Formation in Cu-Al Thin Films Couples Studied by In-Situ X-Ray and Rutherford Backscattering Analysis.

1983 ◽  
Vol 25 ◽  
Author(s):  
R. A. Hamm ◽  
J. M. Vandenberg
Keyword(s):  
Thin Film ◽  
High Vacuum ◽  
Interface Reaction ◽  
Annealing Treatment ◽  
Rutherford Backscattering ◽  
X Ray ◽  
Different Temperatures ◽  
Al Thin Film ◽  
Backscattering Analysis

X-ray diffraction (XRD) and Rutherford backscattering analysis (RBS) have been used independently to study the interface reaction of copperaluminum thin film couples during in-situ annealing in the temperature range 157°–220°C. For the X-ray studies a high vacuum annealing system was constructed on a Huber-Guinier thin film goniometer base1. This system enabled us to monitor the thin film interface reaction via changes of integrated X-ray intensities during the annealing treatment. RBS analysis was carried out with an existing in-situ heating stage. Using both techniques isothermal annealing experiments were carried out for four different temperatures. For this study 900Å Cu/1600Å Al and 1800Å Cu/3200Å Al thin film couples were prepared by sequential evaporation onto water cooled oxidized <111> silicon and MgO substrates.

Irradiation Mixing of Al into U3Si

1995 ◽  
Vol 396 ◽  
Author(s):  
R. C. Birtcher ◽  
F.-R. Ding ◽  
B. J. Kestel ◽  
P. M. Baldo ◽  
N. J. Zaluzec
Keyword(s):  
Thin Film ◽  
Oxide Layer ◽  
Initial Dose ◽  
Ion Irradiation ◽  
Rutherford Backscattering ◽  
Swelling Behavior ◽  
Threshold Dose ◽  
Phase Growth ◽  
Fission Gas ◽  
Al Thin Film

AbstractThermal and irradiation induced intermixing of uranium suicide reactor fuels with the aluminum cladding is an important consideration in understanding their fission gas and fuel swelling behavior. We have used Rutherford backscattering to follow the behavior of an Al thin film on U3Si and U3Si2 during 1.5 MeV Kr ion irradiation at temperatures of 30 and 350°C. After an initial dose during which no intermixing occurs, the Al mixes quickly into U3Si. The threshold dose is believed to be associated with an oxide layer between the Al and the uranium suicide. At 300°C and doses greater than threshold, rates of mixing and aluminide phase growth are extracted.

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