Highly conductive SnO[sub 2] thin films for flat-panel displays

2007 ◽  
Vol 15 (2) ◽  
pp. 161 ◽  
Author(s):  
Takamitsu Isono ◽  
Takeshi Fukuda ◽  
Kouji Nakagawa ◽  
Reo Usui ◽  
Ryohei Satoh ◽  
...  
Keyword(s):  
Thin Films ◽  
Flat Panel Displays ◽  
Flat Panel

Thin films engineering of indium tin oxide: Large area flat panel displays application

2006 ◽  
Vol 200 (20-21) ◽  
pp. 5751-5759 ◽  
Author(s):  
U. Betz ◽  
M. Kharrazi Olsson ◽  
J. Marthy ◽  
M.F. Escolá ◽  
F. Atamny
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Flat Panel Displays ◽  
Large Area ◽  
Flat Panel

Heat-Resistant Black Insulative Thin Films for Flat-Panel Displays in Al-Doped Ag–Fe–O Systems

2021 ◽  
Author(s):  
Mina Yamaguchi ◽  
Akihiro Ishii ◽  
Itaru Oikawa ◽  
Yusuke Yamazaki ◽  
Masaaki Imura ◽  
...  
Keyword(s):  
Thin Films ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Heat Resistant

Ale Growth of Transparent Conductors

1996 ◽  
Vol 426 ◽  
Author(s):  
Mikko Rit ◽  
Timo Asikainen ◽  
Markku Leskelä ◽  
Jarmo Skarp
Keyword(s):  
Thin Films ◽  
Scale Up ◽  
Atomic Layer ◽  
Transparent Conductors ◽  
Flat Panel Displays ◽  
Large Area ◽  
Flat Panel ◽  
Electrically Conducting ◽  
Transparent Conducting ◽  
Deposition Processes

AbstractOwing to its self-limiting growth mechanism the Atomic Layer Epitaxy (ALE) technique is capable of growing uniform high quality thin films on large area substrates. Therefore, ALE is an attractive choice for depositing transparent electrically conducting films for large area applications, such as solar cells and flat panel displays. In this paper studies on ALE growth of In2O3 and ZnO based transparent conducting thin films will be presented. In2O3, In2O3:Sn and In 2O3:F films were grown at 500 °C and their lowest resistivities were about 3 x 10-3, 2 x 10-3 and 6 x 10-4 Ωcm, respectively. Low temperature (120 - 350 °C) ALE deposition processes were developed for ZnO and ZnO:AI films, the latter having resistivities as low as 8 x 10-4 Ωcm. A straightforward scale-up of the ZnO process from 5 x 5 to 30 x 30 cm 2 substrate size was also demonstrated.

65.1: High Conductivity SnO[sub 2] Thin Films for Flat Panel Displays

2006 ◽  
Vol 37 (1) ◽  
pp. 1874 ◽  
Author(s):  
Takamitsu Isono ◽  
Takeshi Fukuda ◽  
Koji Nakagawa ◽  
Reo Usui ◽  
Ryohei Satoh ◽  
...  
Keyword(s):  
Thin Films ◽  
High Conductivity ◽  
Flat Panel Displays ◽  
Flat Panel

Electrical Properties of Magnesium Carbon Co-Sputtered Thin Films Applied Post Hydroxylation Treatment

2012 ◽  
Vol 1406 ◽  
Author(s):  
Masafumi Chiba ◽  
Daisuke Endo ◽  
Mikihiko Maizono ◽  
Mikiteru Higashi ◽  
Hideo Kiyota
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Tin Oxide ◽  
Close Agreement ◽  
Rare Metal ◽  
Molecular Orbital Calculations ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Electrically Conductive ◽  
Xps Spectra

ABSTRACTIndium oxide doped with tin oxide, or ITO, has been widely used as an electrode material for flat panel displays. However, the rare metal in ITO is a limited natural resource. We succeeded in developing a material composed solely of elements with abundant reserves. We present the results of analyzing the electronic structure of an Mg-based compound based on its electrical conductivity. Mg-C thin films were prepared by sputtering method. A new transparent and electrically conductive material, Mg(OH)2-C, was formed after reacting the Mg-C film with moisture in air. On average, its transmittance of visible light was 90%. The mechanism for the effect of carbon on the electrical conductivity of Mg(OH)2 was examined on the basis of XPS spectra and DV-Xa molecular orbital calculations. The value of the band gap shows that Mg(OH)2 is an insulator. It was revealed that a new orbital appears when the number of substituting carbon atoms increases in the Mg(OH)2 lattice. It was possible to measure the new orbital that consisted of C-2s and C-2p. In addition, a comparison between the calculated electronic state around the valence band and the result measured by XPS of the obtained film reveals that they are in extremely close agreement.

MOCVD OF SrS and SrS:Ce Thin Films for Eelctroluminescent Flat Panel displays

1995 ◽  
Vol 415 ◽  
Author(s):  
John A. Samuels ◽  
David C. Smith ◽  
Kerry N. Siebein ◽  
Kenny Salazar ◽  
Richard T. Tuenge ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Material ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
High Quality ◽  
Deposition Rates ◽  
Temperature Range ◽  
Cerium Dopant ◽  
Low Pressure Mocvd ◽  
Film Characteristics

ABSTRACTHigh quality SrS and SrS:Ce thin films were deposited from Sr(thd)2, Ce(thd)4 and H2S via a low pressure MOCVD process. Film characteristics were found to be insensitive to the presence of the cerium dopant in the concentration range investigated. Depositions were carried out for a wide temperature range (250–550° C). Deposition rates were found to be relatively insensitive for the temperature range investigated. The films produced were found to be highly crystalline at all temperatures investigated. Deposited material showed texturing as a function of substrate material and temperature. FWHM of the <111> reflections were found to have a 2Θ values of 0.15–0.18 deg. for all temperatures. RBS and AES shows stoichiometric 1:1 SrS with less than 2% carbon and oxygen contaminates. ERD indicates the films to have 1 – 2.5% hydrogen. Films doped with 0.019 – 0.043 atom – 250 volts.

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