Electrical Properties of Magnesium Carbon Co-Sputtered Thin Films Applied Post Hydroxylation Treatment

2012 ◽  
Vol 1406 ◽  
Author(s):  
Masafumi Chiba ◽  
Daisuke Endo ◽  
Mikihiko Maizono ◽  
Mikiteru Higashi ◽  
Hideo Kiyota
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Tin Oxide ◽  
Close Agreement ◽  
Rare Metal ◽  
Molecular Orbital Calculations ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Electrically Conductive ◽  
Xps Spectra

ABSTRACTIndium oxide doped with tin oxide, or ITO, has been widely used as an electrode material for flat panel displays. However, the rare metal in ITO is a limited natural resource. We succeeded in developing a material composed solely of elements with abundant reserves. We present the results of analyzing the electronic structure of an Mg-based compound based on its electrical conductivity. Mg-C thin films were prepared by sputtering method. A new transparent and electrically conductive material, Mg(OH)2-C, was formed after reacting the Mg-C film with moisture in air. On average, its transmittance of visible light was 90%. The mechanism for the effect of carbon on the electrical conductivity of Mg(OH)2 was examined on the basis of XPS spectra and DV-Xa molecular orbital calculations. The value of the band gap shows that Mg(OH)2 is an insulator. It was revealed that a new orbital appears when the number of substituting carbon atoms increases in the Mg(OH)2 lattice. It was possible to measure the new orbital that consisted of C-2s and C-2p. In addition, a comparison between the calculated electronic state around the valence band and the result measured by XPS of the obtained film reveals that they are in extremely close agreement.

Thin films engineering of indium tin oxide: Large area flat panel displays application

2006 ◽  
Vol 200 (20-21) ◽  
pp. 5751-5759 ◽  
Author(s):  
U. Betz ◽  
M. Kharrazi Olsson ◽  
J. Marthy ◽  
M.F. Escolá ◽  
F. Atamny
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Flat Panel Displays ◽  
Large Area ◽  
Flat Panel

scholarly journals Origin of Mangetotransport Properties in APCVD Deposited Tin Oxide Thin Films

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5182
Author(s):  
Krunoslav Juraić ◽  
Davor Gracin ◽  
Matija Čulo ◽  
Željko Rapljenović ◽  
Jasper Rikkert Plaisier ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Tin Oxide ◽  
Texture Coefficient ◽  
Chemical Vapour ◽  
Visible Spectrum ◽  
Soda Lime ◽  
Fine Tuning ◽  
Soda Lime Glass ◽  
Charge Carrier Density

Transparent conducting oxides (TCO) with high electrical conductivity and at the same time high transparency in the visible spectrum are an important class of materials widely used in many devices requiring a transparent contact such as light-emitting diodes, solar cells and display screens. Since the improvement of electrical conductivity usually leads to degradation of optical transparency, a fine-tuning sample preparation process and a better understanding of the correlation between structural and transport properties is necessary for optimizing the properties of TCO for use in such devices. Here we report a structural and magnetotransport study of tin oxide (SnO2), a well-known and commonly used TCO, prepared by a simple and relatively cheap Atmospheric Pressure Chemical Vapour Deposition (APCVD) method in the form of thin films deposited on soda-lime glass substrates. The thin films were deposited at two different temperatures (which were previously found to be close to optimum for our setup), 590 °C and 610 °C, and with (doped) or without (undoped) the addition of fluorine dopants. Scanning Electron Microscopy (SEM) and Grazing Incidence X-ray Diffraction (GIXRD) revealed the presence of inhomogeneity in the samples, on a bigger scale in form of grains (80–200 nm), and on a smaller scale in form of crystallites (10–25 nm). Charge carrier density and mobility extracted from DC resistivity and Hall effect measurements were in the ranges 1–3 × 1020 cm−3 and 10–20 cm2/Vs, which are typical values for SnO2 films, and show a negligible temperature dependence from room temperature down to −269 °C. Such behaviour is ascribed to grain boundary scattering, with the interior of the grains degenerately doped (i.e., the Fermi level is situated well above the conduction band minimum) and with negligible electrostatic barriers at the grain boundaries (due to high dopant concentration). The observed difference for factor 2 in mobility among the thin-film SnO2 samples most likely arises due to the difference in the preferred orientation of crystallites (texture coefficient).

Development of High-Efficiency Zn2SiO4:Mn Thin Films for Flat Panel Cathodoluminescent Displays

1997 ◽  
Vol 471 ◽  
Author(s):  
J. Liu ◽  
D. C. Morton ◽  
M. R. Miller ◽  
Y. Li ◽  
E. W. Forsythe ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Response Time ◽  
Decay Time ◽  
High Efficiency ◽  
Fast Response ◽  
Flat Panel ◽  
Powder Phosphor ◽  
Fast Response Time

ABSTRACTZn2SiO4:Mn thin films were deposited and studied as thin film phosphors for flat panel cathodoluminescent displays. Crystallized films with improved electrical conductivity were obtained after conventional and rapid thermal annealings in a N2 environment at 850Xy11100 °C for 0.25 to 60 minutes. A maximum cathodoluminescent efficiency of 1.3 Lm/W was achieved under dc excitation at 1500 volts. The luminescent emission from these thin films was peaked around 525 nm. The decay time of these films was controlled in the range of 2 to 10 ms by varying the deposition and annealing parameters. The fast response time of these thin films overcomes the long decay limitation of the Zn2SiO4:Mn powder phosphor in practical display applications.

Highly conductive SnO[sub 2] thin films for flat-panel displays

2007 ◽  
Vol 15 (2) ◽  
pp. 161 ◽  
Author(s):  
Takamitsu Isono ◽  
Takeshi Fukuda ◽  
Kouji Nakagawa ◽  
Reo Usui ◽  
Ryohei Satoh ◽  
...  
Keyword(s):  
Thin Films ◽  
Flat Panel Displays ◽  
Flat Panel
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